MCP1700 Low Quiescent Current LDO Features: General Description: * * * * The MCP1700 is a family of CMOS low dropout (LDO) voltage regulators that can deliver up to 250 mA of current while consuming only 1.6 A of quiescent current (typical). The input operating range is specified from 2.3V to 6.0V, making it an ideal choice for two and three primary cell battery-powered applications, as well as single cell Li-Ion-powered applications. * * * * * * * 1.6 A Typical Quiescent Current Input Operating Voltage Range: 2.3V to 6.0V Output Voltage Range: 1.2V to 5.0V 250 mA Output Current for Output Voltages 2.5V 200 mA Output Current for Output Voltages < 2.5V Low Dropout (LDO) Voltage - 178 mV typical @ 250 mA for VOUT = 2.8V 0.4% Typical Output Voltage Tolerance Standard Output Voltage Options: - 1.2V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 5.0V Stable with 1.0 F Ceramic Output Capacitor Short Circuit Protection Overtemperature Protection Applications: * * * * * * * * * * Battery-Powered Devices Battery-Powered Alarm Circuits Smoke Detectors CO2 Detectors Pagers and Cellular Phones Smart Battery Packs Low Quiescent Current Voltage Reference PDAs Digital Cameras Microcontroller Power Related Literature: * AN765, "Using Microchip's Micropower LDOs" (DS00765), Microchip Technology Inc., 2002 * AN766, "Pin-Compatible CMOS Upgrades to BiPolar LDOs" (DS00766), Microchip Technology Inc., 2002 * AN792, "A Method to Determine How Much Power a SOT23 Can Dissipate in an Application" (DS00792), Microchip Technology Inc., 2001 The MCP1700 is capable of delivering 250 mA with only 178 mV of input to output voltage differential (VOUT = 2.8V). The output voltage tolerance of the MCP1700 is typically 0.4% at +25C and 3% maximum over the operating junction temperature range of -40C to +125C. Output voltages available for the MCP1700 range from 1.2V to 5.0V. The LDO output is stable when using only 1 F output capacitance. Ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. Overcurrent limit and overtemperature shutdown provide a robust solution for any application. Package options include SOT-23, SOT-89, TO-92 and 2x2 DFN-6. Package Types 3-Pin SOT-23 3-Pin SOT-89 VIN VIN 3 MCP1700 MCP1700 1 2 GND VOUT 1 2 GND VIN VOUT 3-Pin TO-92 2x2 DFN-6* VIN 1 MCP1700 1 2 3 3 NC 2 GND 3 6 VOUT EP 7 5 NC 4 NC GND VIN VOUT * Includes Exposed Thermal Pad (EP); see Table 3-1. 2005-2013 Microchip Technology Inc. DS20001826C-page 1 MCP1700 Functional Block Diagrams MCP1700 VOUT VIN Error Amplifier +VIN Voltage Reference + Overcurrent Overtemperature GND Typical Application Circuits MCP1700 GND VOUT 1.8V IOUT 150 mA DS20001826C-page 2 VIN VOUT VIN (2.3V to 3.2V) CIN 1 F Ceramic COUT 1 F Ceramic 2005-2013 Microchip Technology Inc. MCP1700 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDD ............................................................................................+6.5V All inputs and outputs w.r.t. ......... (VSS - 0.3V) to (VIN + 0.3V) Peak Output Current .................................... Internally Limited Storage temperature .....................................-65C to +150C Maximum Junction Temperature ................................... 150C Operating Junction Temperature...................-40C to +125C ESD protection on all pins (HBM;MM) 4 kV; 400V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 A, COUT = 1 F (X7R), CIN = 1 F (X7R), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 6) of -40C to +125C. Parameters Sym. Min. Typ. Max. Units Conditions Input / Output Characteristics Input Operating Voltage VIN 2.3 -- 6.0 V Input Quiescent Current Iq -- 1.6 4 A IL = 0 mA, VIN = VR + 1V Maximum Output Current IOUT_mA 250 200 -- -- -- -- mA For VR 2.5V For VR 2.5V Output Short Circuit Current IOUT_SC -- 408 -- mA VIN = VR + 1V, VOUT = GND Current (peak current) measured 10 ms after short is applied. Output Voltage Regulation VOUT VR - 3.0% VR - 2.0% VR 0.4% VR + 3.0% VR + 2.0% V Note 2 TCVOUT -- 50 -- ppm/C Note 3 Line Regulation VOUT/ (VOUTXVIN) -1.0 0.75 +1.0 %/V Load Regulation VOUT/VOUT -1.5 1.0 +1.5 % Dropout Voltage VR 2.5V VIN - VOUT -- 178 350 mV IL = 250 mA, (Note 1, Note 5) Dropout Voltage VR 2.5V VIN - VOUT -- 150 350 mV IL = 200 mA, (Note 1, Note 5) Output Rise Time TR -- 500 -- s 10% VR to 90% VR VIN = 0V to 6V, RL = 50 resistive VOUT Temperature Coefficient Note 1: 2: 3: 4: 5: 6: 7: Note 1 (VR + 1)V VIN 6V IL = 0.1 mA to 250 mA for VR 2.5V IL = 0.1 mA to 200 mA for VR 2.5V Note 4 The minimum VIN must meet two conditions: VIN 2.3V and VIN VR + 3.0% VDROPOUT. VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The input voltage VIN = VR + 1.0V; IOUT = 100 A. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a VR + 1V differential applied. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant. 2005-2013 Microchip Technology Inc. DS20001826C-page 3 MCP1700 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 A, COUT = 1 F (X7R), CIN = 1 F (X7R), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 6) of -40C to +125C. Parameters Output Noise Power Supply Ripple Rejection Ratio Thermal Shutdown Protection Note 1: 2: 3: 4: 5: 6: 7: Sym. Min. Typ. Max. Units V/(Hz) Conditions 1/2 eN -- 3 -- PSRR -- 44 -- dB f = 100 Hz, COUT = 1 F, IL = 50 mA, VINAC = 100 mV pk-pk, CIN = 0 F, VR = 1.2V IL = 100 mA, f = 1 kHz, COUT = 1 F TSD -- 140 -- C VIN = VR + 1V, IL = 100 A The minimum VIN must meet two conditions: VIN 2.3V and VIN VR + 3.0% VDROPOUT. VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The input voltage VIN = VR + 1.0V; IOUT = 100 A. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a VR + 1V differential applied. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant. TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 A, COUT = 1 F (X7R), CIN = 1 F (X7R), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 1) of -40C to +125C. Parameters Sym. Min. Specified Temperature Range TA Operating Temperature Range TJ Storage Temperature Range Typ. Max. Units -40 +125 C -40 +125 C TA -65 +150 C JA -- 91 -- C/W JC -- 19 -- C/W JA -- 336 -- C/W JC -- 110 -- C/W Conditions Temperature Ranges Thermal Package Resistance Thermal Resistance, 2x2 DFN Thermal Resistance, SOT-23 Thermal Resistance, SOT-89 Thermal Resistance, TO-92 Note 1: JA -- 180 -- C/W JC -- 52 -- C/W JA -- 160 -- C/W JC -- 66.3 -- C/W EIA/JEDEC(R) JESD51-7 FR-4 0.063 4-Layer Board EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained junction temperatures above 150C can impact the device reliability. DS20001826C-page 4 2005-2013 Microchip Technology Inc. MCP1700 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VR + 1V. Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant. 1.208 VR = 1.2V IOUT = 0 A 2.8 1.206 TJ = +125C 2.6 2.4 TJ = - 40C 2.2 2.0 1.8 TJ = +25C 1.6 Ou utput Voltage (V) Quies scent Current (A) 3.0 1.202 1.200 TJ = +25C 1.198 1.196 TJ = - 40C 1.192 1.2 1.190 1.0 2.0 2.5 3.0 FIGURE 2-1: Input Voltage. 3.5 4.0 4.5 Input Voltage (V) 5.0 5.5 2.0 6.0 Input Quiescent Current vs. 3.0 3.5 4.0 4.5 Input Voltage (V) 5.0 5.5 6.0 1.800 VR = 2.8V 45 2.5 FIGURE 2-4: Output Voltage vs. Input Voltage (VR = 1.2V). 50 VR = 1.8V IOUT = 0.1 mA TJ = +125C 1.795 40 TJ = +25C 35 30 TJ = - 40C 25 20 15 10 Outp put Voltage (V) Grou und Current (A) 1.204 1.194 1.4 VR = 1.2V IOUT = 0.1 mA TJ = +125C 1.790 TJ = - 40C TJ = +125C 1.785 1 780 1.780 TJ = +25C 1.775 5 1.770 0 0 25 50 FIGURE 2-2: Current. Ground Current vs. Load 3.0 3.5 4.0 4.5 Input Voltage (V) 5.0 5.5 6.0 FIGURE 2-5: Output Voltage vs. Input Voltage (VR = 1.8V). VR = 5.0V VR = 1.2V VR = 2.8V 1.50 VR = 2.8V IOUT = 0.1 mA 2.798 Ou utput Voltage (V) Quiesc cent Current (A) VIN = VR + 1V IOUT = 0 A 2.00 1.75 2.5 2.800 2.50 2.25 2.0 75 100 125 150 175 200 225 250 Load Current (mA) TJ = +25C 2.796 2.794 2.792 2.790 TJ = - 40C 2.788 2.786 2.784 TJ = +125C 2.782 2.780 1.25 2.778 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (C) FIGURE 2-3: Quiescent Current vs. Junction Temperature. 2005-2013 Microchip Technology Inc. 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 Input Voltage (V) FIGURE 2-6: Output Voltage vs. Input Voltage (VR = 2.8V). DS20001826C-page 5 MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VR + 1V. 5.000 VR = 5.0V IOUT = 0.1 mA Ou utput Voltage (V) Output Voltage (V) 4.995 TJ = +25C 4.990 TJ = - 40C 4.985 4.980 4.975 4.970 4.965 TJ = +125C 4.960 4.955 5.0 5.2 5.4 5.6 Input Voltage (V) 5.8 6.0 FIGURE 2-7: Output Voltage vs. Input Voltage (VR = 5.0V). VR = 2.8V VIN = VR + 1V TJ = - 40C TJ = +125C 0 50 100 150 Load Current (mA) 200 250 FIGURE 2-10: Output Voltage vs. Load Current (VR = 2.8V). 1.21 5.000 VR = 1.2V VIN = VR + 1V TJ = - 40C 1.20 1.19 TJ = +25C 1.18 1.17 TJ = +125 +125C C TJ = +25C 4.995 Output Voltage (V) Output Voltage (V) TJ = +25C 2.798 2.796 2.794 2.792 2.790 2.788 2.786 2 784 2.784 2.782 2.780 2.778 1.16 4.990 4.985 TJ = - 40C 4.980 VR = 5.0V VIN = VR + 1V 4.975 4 970 4.970 4.965 TJ = +125C 4.960 1.15 4.955 0 25 50 75 100 125 150 175 200 0 50 Load Current (mA) FIGURE 2-8: Output Voltage vs. Load Current (VR = 1.2V). 200 250 FIGURE 2-11: Output Voltage vs. Load Current (VR = 5.0V). 0.25 1.792 VR = 2.8V 1.790 Drop pout Votage (V) Ou utput Voltage (V) 100 150 Load Current (mA) TJ = +25C 1.788 TJ = - 40C 1.786 TJ = +125C 1.784 1.782 VR = 1.8V VIN = VR + 1V 1.780 0.20 TJ = +125C TJ = +25C 0.15 0.10 TJ = - 40C 0.05 0.00 1.778 0 25 50 75 100 125 150 Load Current (mA) 175 200 FIGURE 2-9: Output Voltage vs. Load Current (VR = 1.8V). DS20001826C-page 6 0 25 50 75 100 125 150 175 200 225 250 Load Current (mA) FIGURE 2-12: Dropout Voltage vs. Load Current (VR = 2.8V). 2005-2013 Microchip Technology Inc. MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VR + 1V. 0.16 0.12 TJ = +125C 0.10 Noise (V/Hz) N Dropo out Voltage (V) 10.00 VR = 5.0V 0.14 TJ = +25C 0.08 0.06 TJ = - 40C 0.04 1.00 VIN = 3.8V VR = 2.8V IOUT = 50 mA VIN = 2.5V VIN = 2.8V VR = 1.2V VR = 1.8V IOUT = 50 mA IOUT = 50 mA 0 10 0.10 0.02 0.00 0 25 50 75 100 125 150 175 200 225 250 Load Current (mA) FIGURE 2-13: Dropout Voltage vs. Load Current (VR = 5.0V). 0.01 0.01 FIGURE 2-16: 1 10 Frequency (kHz) 100 1000 Noise vs. Frequency. VIN = 2.2V +20 +10 CIN = 1F Ceramic COUT = 1F Ceramic 0 PSRR (dB/decade) 0.1 -10 -20 VR = 1.2V -30 -40 -50 I = 100 mA Load Step -60 -70 0.01 0.10 1.00 10.0 Frequency (KHz) 100 1000 FIGURE 2-14: Power Supply Ripple Rejection vs. Frequency (VR = 1.2V). FIGURE 2-17: (VR = 1.2V). +20 Dynamic Load Step VIN = 2.8V +10 CIN = 1F Ceramic COUT = 1F Ceramic PSRR (dB/Decade) 0 -10 VR = 1.8V -20 -30 -40 I = 100 mA Load Step -50 -60 0.01 0.01 10.00 1 Frequency (KHz) 100 FIGURE 2-15: Power Supply Ripple Rejection vs. Frequency (VR = 2.8V). 2005-2013 Microchip Technology Inc. 1000 FIGURE 2-18: (VR = 1.8V). Dynamic Load Step DS20001826C-page 7 MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VR + 1V. VIN = 6V CIN = 1 F Ceramic COUT = 22 F (1 ESR) VIN = 3.8V CIN = 1F Ceramic COUT = 1F Ceramic VR = 5V VR = 2.8V I = 100 mA Load Step IOUT= 200 mA Load Step FIGURE 2-19: (VR = 2.8V). Dynamic Load Step VIN = 2.8V VR = 1.8V CIN = 1 F Ceramic COUT = 22 F (1 ESR) FIGURE 2-22: (VR = 5.0V). VIN = 3.8V to 4.8V Dynamic Load Step COUT = 1 F Ceramic VR = 2.8V IOUT= 200 mA Load Step IOUT 100 mA FIGURE 2-20: (VR = 1.8V). Dynamic Load Step VIN = 3.8V CIN = 1 F Ceramic FIGURE 2-23: (VR = 2.8V). VIN = 0V to 2.2V COUT = 22 F (1 ESR) Dynamic Line Step COUT = 1 F Ceramic RLOAD = 25 VR = 2.8V VR = 1.2V IOUT= 200 mA Load Step FIGURE 2-21: (VR = 2.8V). DS20001826C-page 8 Dynamic Load Step FIGURE 2-24: (VR = 1.2V). Start-up from VIN 2005-2013 Microchip Technology Inc. MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), IL = 100 A, TA = +25C, VIN = VR + 1V. COUT = 1 F Ceramic RLOAD = 25 VR = 1.8V 0.0 Loa ad Regulation (%) VIN = 0V to 2.8V VIN = 5.0V -0.1 VR = 2.8V IOUT = 0 to 250 mA VIN = 4.3V -0.2 -0.3 -0.4 VIN = 3.3V -0.5 -0.6 -0.7 -40 -25 -10 FIGURE 2-25: (VR = 1.8V). Start-up from VIN VIN = 0V to 3.8V FIGURE 2-28: Load Regulation vs. Junction Temperature (VR = 2.8V). COUT = 1 F Ceramic RLOAD = 25 0.10 Load d Regulation (%) VR = 2.8V 5 20 35 50 65 80 95 110 125 Junction Temperature (C) VR = 5.0V IOUT = 0 to 250 mA 0.05 VIN = 6.0V 0.00 -0.05 VIN = 5 5.5V 5 -0.10 0 10 -0.15 -0.20 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (C) FIGURE 2-26: (VR = 2.8V). Start-up from VIN FIGURE 2-29: Load Regulation vs. Junction Temperature (VR = 5.0V). 0.2 VR = 1.8V IOUT = 0 to 200 mA VIN = 5.0V 0.1 VIN = 3.5V 0.0 -0.1 02 -0.2 VIN = 2.2V -0.3 0.10 Line Regulation (%/V) Loa ad Regulation (%) 0.3 0.05 0.00 VR = 2.8V -0.05 -0.10 VR = 1.8V -0.15 -0.20 VR = 1.2V -0.25 -0.4 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (C) FIGURE 2-27: Load Regulation vs. Junction Temperature (VR = 1.8V). 2005-2013 Microchip Technology Inc. -0.30 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (C) FIGURE 2-30: Line Regulation vs. Temperature (VR = 1.2V, 1.8V, 2.8V). DS20001826C-page 9 MCP1700 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. SOT-23 Pin No. SOT-89 1 1 1 3 GND Ground Terminal 2 3 3 6 VOUT Regulated Voltage Output 3.1 Pin No. TO-92 Pin No. 2x2 DFN-6 Function 3 2 2 1 VIN Unregulated Supply Voltage -- -- -- 2, 4, 5 NC No Connect -- -- -- 7 EP Exposed Thermal Pad Ground Terminal (GND) Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (1.6 A typical) flows out of this pin; there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load. 3.2 Name Regulated Output Voltage (VOUT) 3.4 No Connect (NC) No internal connection. The pins marked NC are true "No Connect" pins. 3.5 Exposed Thermal Pad (EP) There is an internal electrical connection between the Exposed Thermal Pad (EP) and the GND pin; they must be connected to the same potential on the Printed Circuit Board (PCB). Connect VOUT to the positive side of the load and the positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO VOUT pin as is practical. The current flowing out of this pin is equal to the DC load current. 3.3 Unregulated Input Voltage Pin (VIN) Connect VIN to the input unregulated source voltage. As with all low dropout linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 1 F of capacitance will ensure stable operation of the LDO circuit. For applications that have load currents below 100 mA, the input capacitance requirement can be lowered. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and PSRR performance at high frequency. DS20001826C-page 10 2005-2013 Microchip Technology Inc. MCP1700 4.0 DETAILED DESCRIPTION 4.1 Output Regulation 4.3 A portion of the LDO output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. The error amplifier output will adjust the amount of current that flows through the P-Channel pass transistor, thus regulating the output voltage to the desired value. Any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to Figure 4-1). 4.2 Overtemperature The internal power dissipation within the LDO is a function of input-to-output voltage differential and load current. If the power dissipation within the LDO is excessive, the internal junction temperature will rise above the typical shutdown threshold of 140C. At that point, the LDO will shut down and begin to cool to the typical turn-on junction temperature of 130C. If the power dissipation is low enough, the device will continue to cool and operate normally. If the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the LDO, protecting it from catastrophic failure. Overcurrent The MCP1700 internal circuitry monitors the amount of current flowing through the P-Channel pass transistor. In the event of a short circuit or excessive output current, the MCP1700 will turn off the P-Channel device for a short period, after which the LDO will attempt to restart. If the excessive current remains, the cycle will repeat itself. MCP1700 VOUT VIN Error Amplifier +VIN Voltage Reference + Overcurrent Overtemperature GND FIGURE 4-1: Block Diagram. 2005-2013 Microchip Technology Inc. DS20001826C-page 11 MCP1700 5.0 FUNCTIONAL DESCRIPTION The MCP1700 CMOS low dropout linear regulator is intended for applications that need the lowest current consumption while maintaining output voltage regulation. The operating continuous load of the MCP1700 ranges from 0 mA to 250 mA (VR 2.5V). The input operating voltage ranges from 2.3V to 6.0V, making it capable of operating from two, three or four alkaline cells or a single Li-Ion cell battery input. 5.1 Input The input of the MCP1700 is connected to the source of the P-Channel PMOS pass transistor. As with all LDO circuits, a relatively low source impedance (10) is needed to prevent the input impedance from causing the LDO to become unstable. The size and type of the required capacitor depend heavily on the input source type (battery, power supply) and the output current range of the application. For most applications (up to 100 mA), a 1 F ceramic capacitor will be sufficient to ensure circuit stability. Larger values can be used to improve circuit AC performance. 5.2 Output The maximum rated continuous output current for the MCP1700 is 250 mA (VR 2.5V). For applications where VR < 2.5V, the maximum output current is 200 mA. A minimum output capacitance of 1.0 F is required for small signal stability in applications that have up to 250 mA output current capability. The capacitor type can be ceramic, tantalum or aluminum electrolytic. The ESR range on the output capacitor can range from 0 to 2.0. 5.3 Output Rise time When powering up the internal reference output, the typical output rise time of 500 s is controlled to prevent overshoot of the output voltage. DS20001826C-page 12 2005-2013 Microchip Technology Inc. MCP1700 6.0 APPLICATION CIRCUITS AND ISSUES 6.1 Typical Application The MCP1700 is most commonly used as a voltage regulator. Its low quiescent current and low dropout voltage make it ideal for many battery-powered applications. GND VIN COUT 1 F Ceramic FIGURE 6-1: 6.1.1 VIN (2.3V to 3.2V) VOUT IOUT 150 mA CIN 1 F Ceramic Typical Application Circuit. APPLICATION INPUT CONDITIONS Package Type = SOT-23 Input Voltage Range = 2.3V to 3.2V VIN maximum = 3.2V VOUT typical = 1.8V IOUT = 150 mA maximum 6.2 Power Calculations 6.2.1 EQUATION 6-2: T J MAX = PTOTAL R JA + T A MAX MCP1700 VOUT 1.8V The maximum continuous operating junction temperature specified for the MCP1700 is +125C. To estimate the internal junction temperature of the MCP1700, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (RJA). The thermal resistance from junction to ambient for the SOT-23 pin package is estimated at 230C/W. POWER DISSIPATION The internal power dissipation of the MCP1700 is a function of input voltage, output voltage and output current. The power dissipation resulting from the quiescent current draw is so low it is insignificant (1.6 A x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: P LDO = VIN MAX - V OUT MIN I OUT MAX PLDO = Internal power dissipation of the LDO Pass device VIN(MAX) = Maximum input voltage VOUT(MIN) = Minimum output voltage of the LDO TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total power dissipation of the device RJA = TA(MAX) = Thermal resistance from junction to ambient Maximum ambient temperature The maximum power dissipation capability for a package can be calculated given the junction-toambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the maximum internal power dissipation of the package. EQUATION 6-3: T J MAX - T A MAX P D MAX = --------------------------------------------------R JA PD(MAX) = Maximum power dissipation of the device TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature RJA = Thermal resistance from junction to ambient EQUATION 6-4: T J RISE = P D MAX R JA TJ(RISE) = Rise in the device's junction temperature over the ambient temperature PTOTAL = Maximum power dissipation of the device RJA = Thermal resistance from junction to ambient 2005-2013 Microchip Technology Inc. DS20001826C-page 13 MCP1700 EQUATION 6-5: T J = T J RISE + T A TJ = Junction Temperature TJ(RISE) = Rise in the device's junction temperature over the ambient temperature TA = Ambient temperature 6.3 Voltage Regulator Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation resulting from ground current is small enough to be neglected. 6.3.1 POWER DISSIPATION EXAMPLE Package TJ(RISE) = PTOTAL x RJA TJ(RISE) = 218.1 milli-Watts x 230.0C/Watt TJ(RISE) = 50.2C Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below. TJ = TJ(RISE) + TA(MAX) TJ = 90.2C Maximum Package Power Dissipation at +40C Ambient Temperature 2x2 DFN-6 (91C/Watt = RJA) PD(MAX) = (125C - 40C) / 91C/W PD(MAX) = 934 milli-Watts SOT-23 (230.0C/Watt = RJA) Package Type = SOT-23 PD(MAX) = (125C - 40C) / 230C/W Input Voltage PD(MAX) = 369.6 milli-Watts VIN = 2.3V to 3.2V LDO Output Voltages and Currents VOUT = 1.8V IOUT = 150 mA Maximum Ambient Temperature TA(MAX) = +40C SOT-89 (52C/Watt = RJA) PD(MAX) = (125C - 40C) / 52C/W PD(MAX) = 1.635 Watts TO-92 (131.9C/Watt = RJA) PD(MAX) = (125C - 40C) / 131.9C/W PD(MAX) = 644 milli-Watts Internal Power Dissipation Internal Power dissipation is the product of the LDO output current times the voltage across the LDO (VIN to VOUT). PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA PLDO = 218.1 milli-Watts Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (RJA) is derived from an EIA/JEDEC(R) standard for measuring thermal resistance for small surface mount packages. The EIA/ JEDEC specification is JESD51-7, "High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages". The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792, "A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application" (DS00792), for more information regarding this subject. DS20001826C-page 14 2005-2013 Microchip Technology Inc. MCP1700 6.4 Voltage Reference The MCP1700 can be used not only as a regulator, but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the MCP1700 LDO. The low cost, low quiescent current and small ceramic output capacitor are all advantages when using the MCP1700 as a voltage reference. Ratio Metric Reference PIC(R) Microcontroller 1 A Bias MCP1700 CIN 1 F VIN VOUT GND COUT 1 F VREF AD0 AD1 Bridge Sensor FIGURE 6-2: voltage reference. 6.5 Using the MCP1700 as a Pulsed Load Applications For some applications, there are pulsed load current events that may exceed the specified 250 mA maximum specification of the MCP1700. The internal current limit of the MCP1700 will prevent high peak load demands from causing non-recoverable damage. The 250 mA rating is a maximum average continuous rating. As long as the average current does not exceed 250 mA, pulsed higher load currents can be applied to the MCP1700. The typical current limit for the MCP1700 is 550 mA (TA + 25C). 2005-2013 Microchip Technology Inc. DS20001826C-page 15 MCP1700 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 3-Pin SOT-23 Standard Extended Temp CKNN 3-Pin SOT-89 CUYYWW Symbol Voltage * CK CM CP CQ CR CS CU 1.2 1.8 2.5 2.8 3.0 3.3 5.0 * Custom output voltages available upon request. NNN Contact your local Microchip sales office for more information. Example 3-Pin TO-92 1700 1202E e3 TO^^ 322256 XXXXXX XXXXXX XXXXXX YWWNNN 6-Lead DFN (2x2x0.9 mm) Legend: XX...X Y YY WW NNN e3 * Note: DS20001826C-page 16 Example Part Number Code MCP1700T-1202E/MAY ABB MCP1700T-1802E/MAY ABC MCP1700T-2502E/MAY ABD MCP1700T-2802E/MAY ABF MCP1700T-3002E/MAY ABE MCP1700T-3302E/MAY AAZ MCP1700T-5002E/MAY ABA ABB 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC(R) designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2005-2013 Microchip Technology Inc. MCP1700 /HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU 77 >627@ 1RWH .# #$ # / ## +33--- 3 ! - / 1 # 2 / % # # ! # b N E E1 2 1 e e1 D c A A2 A1 L 4# 5# 6$9 %2 5 55"" 6 6 8 : !2# 7$# ! 5 67 ')* !2# 7, ; # ! !2 / / # !%% 7, =!# ! !2 / =!# )* < ' < " < > " > : 7, 5 # > :' .#5 # 5 : ' > .# ? < ? 5 < !/ 5 !=!# 9 : < ' 1RWHV !"!#$! !% #$ !% #$ # & !' !# "(' )*+ ) # & #, $ --#$## ! - * ) 2005-2013 Microchip Technology Inc. DS20001826C-page 17 MCP1700 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20001826C-page 18 2005-2013 Microchip Technology Inc. MCP1700 /HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU+HDGHU 0% >627@ 1RWH .# #$ # / ## +33--- 3 ! - / 1 # 2 / % # # ! # D D1 E H L 1 N 2 b b1 b1 e E1 e1 A C 4# 5# 6$9 %5 55"" 6 6 : !2# :)* 2# 7$# ! 5 8 ! ')* 7, ; # > 7, =!# ; : ' ! !2 / =!# #) " > ! !2 / =!# # " : 7, 5 # : > 95 # : .#5 # 5 5 !/ :' 5 !=!# 9 '> 5 ! @:=!# 9 :> 1RWHV !"!#$! !% #$ !% #$ # & !# "(' )*+ ) # & #, $ --#$## ! ! - * ) 2005-2013 Microchip Technology Inc. DS20001826C-page 19 MCP1700 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20001826C-page 20 2005-2013 Microchip Technology Inc. MCP1700 /HDG3ODVWLF7UDQVLVWRU2XWOLQH 72 >72@ 1RWH .# #$ # / ## +33--- 3 ! - / 1 # 2 / % # # ! # E A N 1 L 1 2 3 b e c D R 4# 5# 6$9 %2 6*;" 6 6 2# ')* )###2 / . # 7, =!# 7, 5 # ! !2 / # 5 8 : !$ # 2 !/ ' >' " ' ' ' 5 ' < 5 !=!# 9 1RWHV !"!#$! !% #$ !% #$ # & !# "(' )*+ ) # & #, $ --#$## !'A ! - * ) 2005-2013 Microchip Technology Inc. DS20001826C-page 21 MCP1700 DS20001826C-page 22 2005-2013 Microchip Technology Inc. MCP1700 2005-2013 Microchip Technology Inc. DS20001826C-page 23 MCP1700 NOTES: DS20001826C-page 24 2005-2013 Microchip Technology Inc. MCP1700 APPENDIX A: REVISION HISTORY Revision C (October 2013) The following is the list of modifications: 1. 2. 3. 4. 5. 6. 7. Added new package to the family (2x2 DFN-6) and related information throughout the document. Updated thermal package resistance information in Temperature Specifications. Updated Section 3.0, Pin Descriptions. Added package markings and drawings for the 2x2 DFN-6 package. Added information related to the 2.8V option throughout the document. Updated Product Identification System. Minor typographical changes. Revision B (February 2007) * Updated Packaging Information. * Corrected Product Identification System. * Changed X5R to X7R in Notes to DC Characteristics, Temperature Specifications, and Section 2.0, Typical Performance Curves. Revision A (November 2005) * Original Release of this Document. 2005-2013 Microchip Technology Inc. DS20001826C-page 25 MCP1700 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X- XXX X X /XX MCP1700 Tape & Reel Voltage Output Tolerance Temp. Range Package Device: MCP1700: Low Quiescent Current LDO Tape and Reel: T: Tape and Reel only applies to SOT-23 and SOT-89 devices Standard Output Voltage: * 120 180 250 280 300 330 500 = = = = = = = 1.2V 1.8V 2.5V 2.8V 3.0V 3.3V 5.0V * Custom output voltages available upon request. Contact your local Microchip sales office for more information Tolerance: 2 = 2% Temperature Range: E = -40C to +125C (Extended) Package: MAY = MB = TO = TT = Examples: 2x2 DFN-6 Package: a) b) c) d) e) f) g) MCP1700T-1202E/MAY:1.2V VOUT MCP1700T-1802E/MAY:1.8V VOUT MCP1700T-2502E/MAY:2.5V VOUT MCP1700T-2802E/MAY:2.8V VOUT MCP1700T-3002E/MAY:3.0V VOUT MCP1700T-3302E/MAY:3.3V VOUT MCP1700T-5002E/MAY:5.0V VOUT SOT-89 Package: a) b) c) d) e) f) g) MCP1700T-1202E/MB:1.2V VOUT MCP1700T-1802E/MB:1.8V VOUT MCP1700T-2502E/MB:2.5V VOUT MCP1700T-2802E/MB:2.8V VOUT MCP1700T-3002E/MB:3.0V VOUT MCP1700T-3302E/MB:3.3V VOUT MCP1700T-5002E/MB:5.0V VOUT TO-92 Package: Plastic Small Outline Transistor (DFN), 6-lead Plastic Small Outline Transistor (SOT-89), 3-lead Plastic Small Outline Transistor (TO-92), 3-lead Plastic Small Outline Transistor (SOT-23), 3-lead a) b) c) d) e) f) g) MCP1700-1202E/TO:1.2V VOUT MCP1700-1802E/TO:1.8V VOUT MCP1700-2502E/TO:2.5V VOUT MCP1700-2802E/TO:2.8V VOUT MCP1700-3002E/TO:3.0V VOUT MCP1700-3302E/TO:3.3V VOUT MCP1700-5002E/TO:5.0V VOUT SOT-23 Package: a) b) c) d) e) f) g) DS20001826C-page 26 MCP1700T-1202E/TT:1.2V VOUT MCP1700T-1802E/TT:1.8V VOUT MCP1700T-2502E/TT:2.5V VOUT MCP1700T-2802E/TT:2.8V VOUT MCP1700T-3002E/TT:3.0V VOUT MCP1700T-3302E/TT:3.3V VOUT MCP1700T-5002E/TT:5.0V VOUT 2005-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2005-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62077-526-4 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2005-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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