PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET(R) Power MOSFET D VDSS = 55V RDS(on) = 7.5m G Description ID = 42A S This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. I-Pak IRFU1010ZPbF D-Pak IRFR1010ZPbF Absolute Maximum Ratings Parameter Max. I D @ T C = 25C Continuous Drain Current, V GS @ 10V (Silicon Limited) I D @ T C = 100C Continuous Drain Current, V GS @ 10V I D @ T C = 25C I DM 42 c 360 P D @T C = 25C Power Dissipation V GS d E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value E AS (Tested ) c I AR Avalanche Current E AR TJ Repetitive Avalanche Energy T STG Storage Temperature Range h Parameter R JA Junction-to-Ambient j mJ A C Mounting Torque, 6-32 or M3 screw Junction-to-Ambient (PCB mount) 110 -55 to + 175 300 (1.6mm from case ) y ij y 10 lbf in (1.1N m) Thermal Resistance R JA W/C V mJ Soldering Temperature, for 10 seconds j W 0.9 20 220 Operating Junction and Junction-to-Case 140 See Fig.12a, 12b, 15, 16 g R JC A 65 Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current Linear Derating Factor Gate-to-Source Voltage Units 91 Typ. Max. --- 1.11 --- 40 --- 110 Units C/W HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 09/16/10 IRFR/U1010ZPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 --- --- VGS = 0V, ID = 250A V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.051 --- V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 42A e RDS(on) Static Drain-to-Source On-Resistance --- 5.8 7.5 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 gfs Forward Transconductance 31 --- --- S VDS = 25V, ID = 42A IDSS Drain-to-Source Leakage Current --- --- 20 A VDS = 55V, VGS = 0V --- --- 250 IGSS V VDS = VGS, ID = 100A VDS = 55V, VGS = 0V, TJ = 125C Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 nA VGS = 20V Qg Total Gate Charge --- 63 95 Qgs Gate-to-Source Charge --- 17 --- Qgd Gate-to-Drain ("Miller") Charge --- 23 --- td(on) Turn-On Delay Time --- 17 --- VDD = 28V tr Rise Time --- 76 --- ID = 42A td(off) Turn-Off Delay Time --- 42 --- tf Fall Time --- 48 --- VGS = 10V LD Internal Drain Inductance --- 4.5 --- Between lead, LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package and center of die contact VGS = 0V VGS = -20V ID = 42A nC VDS = 44V VGS = 10V ns nH RG = 7.6 e e D G S Ciss Input Capacitance --- 2840 --- Coss Output Capacitance --- 470 --- Crss Reverse Transfer Capacitance --- 250 --- Coss Output Capacitance --- 1630 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 360 --- VGS = 0V, VDS = 44V, = 1.0MHz Coss eff. Effective Output Capacitance --- 560 --- VGS = 0V, VDS = 0V to 44V VDS = 25V pF = 1.0MHz f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 42 ISM (Body Diode) Pulsed Source Current --- --- 360 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 42A, VGS = 0V trr Reverse Recovery Time --- 24 36 ns TJ = 25C, IF = 42A, VDD = 28V Qrr Reverse Recovery Charge --- 20 30 nC di/dt = 100A/s ton Forward Turn-On Time 2 c MOSFET symbol A showing the integral reverse e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFR/U1010ZPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM 10 4.5V 1 0.1 100 BOTTOM 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C 1 Tj = 175C 1 10 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 120 Gfs , Forward Transconductance (S) ID, Drain-to-Source Current() VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 TJ = 175C 10 TJ = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 TJ = 25C 100 80 TJ = 175C 60 40 20 VDS = 10V 380s PULSE WIDTH 0 0 20 40 60 80 100 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current 3 IRFR/U1010ZPbF 5000 VGS, Gate-to-Source Voltage (V) 4000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 3000 2000 Coss 1000 Crss VDS = 44V VDS= 28V VDS= 11V 16 12 8 4 0 0 1 ID= 42A 10 0 100 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.00 100.00 TJ = 175C 10.00 TJ = 25C VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 60 80 100 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.10 40 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.00 20 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 100sec 10 1msec 10msec 1 Tc = 25C Tj = 175C Single Pulse DC 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U1010ZPbF 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 20 0 25 50 75 100 125 150 ID = 42A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) R3 R3 3 C 3 Ri (C/W) i (sec) 0.3854 0.000251 0.3138 0.4102 0.001092 0.015307 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) IRFR/U1010ZPbF 500 I D 7.6A 11A BOTTOM 42A TOP 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K VGS(th) Gate threshold Voltage (V) 10 V ID = 1.0mA 3.5 ID = 250A ID = 100A 3.0 2.5 2.0 1.5 VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage vs. Temperature www.irf.com IRFR/U1010ZPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 42A 100 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRFR/U1010ZPbF D.U.T Driver Gate Drive + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRFR/U1010ZPbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in as sembly line pos ition indicates "Lead-Free" IRFU120 12 916A 34 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INTERNAT IONAL RECTIF IER LOGO PART NUMBER IRFU120 12 AS SEMBLY LOT CODE 34 DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY S ITE CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRFR/U1010ZPbF I-Pak (TO-251AA) Package Outline I-Pak (TO-251AA) Part Marking Information E XAMPL E : T H IS IS AN IR F U120 WIT H AS S E MB L Y LOT CODE 5678 AS S E MB L E D ON WW 19, 1999 IN T HE AS S E MB L Y L INE "A" INT E R NAT IONAL R E CT IF IE R L OGO PART NU MB E R IR F U 120 919A 56 78 AS S E MB LY L OT CODE 1RWH "P" in as s embly line pos ition indicates "L ead-F ree" DAT E CODE YE AR 9 = 1999 WE E K 19 LINE A OR INT E R NAT IONAL R E CT IF IE R L OGO PART NU MB E R IR F U 120 56 AS S E MB L Y LOT CODE 78 DAT E CODE P = DE S IGNAT E S L E AD-F RE E PR ODU CT (OPT IONAL) YE AR 9 = 1999 WE E K 19 A = AS S E MB LY S IT E CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRFR/U1010ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.13mH RG = 25, IAS = 42A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2010 www.irf.com 11