09/16/10
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HEXFET® is a registered trademark of International Rectifier.
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 7.5mΩ
ID = 42A
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Description
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Advanced Process Technology
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Ultra Low On-Resistance
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175°C Operating Temperature
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Fast Switching
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Repetitive Avalanche Allowed up to Tjmax
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Lead-Free
Features
D-Pak
IRFR1010ZPbF
I-Pak
IRFU1010ZPbF
IRFR1010ZPbF
IRFU1010ZPbF
Absolute Maximum Ratin
g
s
Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
EAS (Thermally limited) Single Pulse Avalanche Energy
d
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
h
IAR Avalanche Current
c
A
EAR Repetitive Avalanche Energy
g
mJ
TJ Operating Junction and
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case
j
––– 1.11
RθJA Junction-to-Ambient (PCB mount)
ij
––– 40 °C/W
RθJA Junction-to-Ambient
j
––– 110
220
110
See Fig.12a, 12b, 15, 16
140
0.9
± 20
Max.
91
65
360
42
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
PD - 95951A
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2www.irf.com
S
D
G
Electr
i
cal
C
haracter
i
st
i
cs
@
TJ = 25°
C
(
unless otherw
i
se spec
ifi
ed
)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 5.8 7.5 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 31 ––– ––– S
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
QgTotal Gate Charge ––– 63 95
Qgs Gate-to-Source Charge ––– 17 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 23 –––
td(on) Turn-On Delay Time ––– 17 –––
trRise Time ––– 76 –––
td(off) Turn-Off Delay Time ––– 42 ––– ns
tfFall Time ––– 48 –––
LDInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 2840 –––
Coss Output Capacitance ––– 470 –––
Crss Reverse Transfer Capacitance ––– 250 ––– pF
Coss Output Capacitance ––– 1630 –––
Coss Output Capacitance ––– 360 –––
Coss eff. Effective Output Capacitance ––– 560 –––
Source-Drain Ratin
g
s and Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 42
(Body Diode) A
ISM Pulsed Source Current ––– ––– 360
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 24 36 ns
Qrr Reverse Recovery Charge ––– 20 30 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 10V
e
VDD = 28V
ID = 42A
RG = 7.6 Ω
TJ = 25°C, IS = 42A, VGS = 0V
e
TJ = 25°C, IF = 42A, VDD = 28V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 42A
e
VDS = VGS, ID = 100µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 20V
VGS = -20V
VDS = 44V
VDS = 25V, ID = 42A
ID = 42A
IRFR/U1010ZPbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60µs PULSE WIDTH
Tj = 175°C
4.5V
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current
(Α)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60µs PULSE WIDTH
0 20406080100
ID,Drain-to-Source Current (A)
0
20
40
60
80
100
120
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 20406080100
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 42A
1 10 100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
ID , Drain Current (A)
LIMITED BY PACKAGE
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 42A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.3854 0.000251
0.3138 0.001092
0.4102 0.015307
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
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Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
1K
VCC
DUT
0
L
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
500
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 7.6A
11A
BOTTOM 42A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
ID = 250µA
ID = 100µA
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Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 42A
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
12
IN THE AS SEMBLY LINE "A"
AS S EMB LE D ON WW 16, 1999
EXAMPLE:
WI T H AS S E MB L Y
THIS IS AN IRFR120
L OT CODE 1234
YEAR 9 = 1999
DAT E CODE
WE E K 1 6
PART NUMBER
LOGO
INT ERNATIONAL
RECTIFIER
AS S E MB L Y
LOT CODE
916A
IRF U120
34
YE AR 9 = 1999
DAT E CODE
OR
P = DE S I GN AT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Note: "P" in as sembly line pos ition
indicates "L ead-F ree"
12 34
WE E K 16
A = AS S E MB L Y S I T E CODE
PART NUMBER
IRF U120
LINE A
LOGO
LOT CODE
AS S E MB L Y
INTERNATIONAL
RECTIFIER
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IRFR/U1010ZPbF
10 www.irf.com
I-Pak (TO-251AA) Package Outline
I-Pak (TO-251AA) Part Marking Information
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
ASSEMBLY
EXAMPLE:
WIT H AS S E MB L Y
T HIS IS AN IRF U120
YEAR 9 = 1999
DAT E CODE
LINE A
WE E K 19
IN THE ASSEMBLY LINE "A"
AS S EMBLED ON WW 19, 1999
LOT CODE 5678
PART NUMBER
56
IRF U 120
INT E RNATIONAL
LOGO
R ECT IF IE R
LOT CODE
919A
78
1RWH
"P" in as s embly line
pos i ti on i ndi cates "L ead-F r ee"
OR
56 78
AS S E MB L Y
LOT CODE
RECTIFIER
LOGO
INTE R NAT IONAL
IRFU120
PART NUMBER
WE E K 1 9
DAT E CODE
YEAR 9 = 1999
A = AS S E MB L Y S IT E COD E
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONAL)
IRFR/U1010ZPbF
www.irf.com 11
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.13mH
RG = 25Ω, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately 90°C
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
