DATA SH EET
Product specification
Supersedes data of 2002 Feb 15 2002 Jun 06
INTEGRATED CIRCUITS
74AHC1G66; 74AHCT1G66
Bilateral switch
2002 Jun 06 2
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
FEATURES
•Very low ON-resistance:
–26Ω (typical) at VCC = 3.0 V
–16Ω (typical) at VCC = 4.5 V
–14Ω (typical) at VCC = 5.5 V.
•ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•High noise immunity
•Low power dissipation
•Balanced propagation delays
•SOT353 and SOT753 package
•Output capability: non standard
•Specified from −40 to +125 °C.
DESCRIPTION
The74AHC1G/AHCT1G66isahigh-speedSi-gateCMOS
device.
The 74AHC1G/AHCT1G66 provides an analog switch.
The switch has two input/output pins (Y and Z) and an
active HIGH enable input pin (E). When pin E is LOW, the
analog switch is turned off.
QUICK REFERENCE DATA
Ground = 0 V; Tamb =25°C; tr=t
f≤3ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PDin µW).
PD=C
PD ×VCC2×fi+ ((CL+C
S
)×V
CC2×fo) where:
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
CS= maximum switch capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI= GND to VCC.
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
AHC1G AHCT1G
tPZH/tPZL turn-on time E to Vos CL= 15 pF; RL=1kΩ;
V
CC =5V 33ns
t
PHZ/tPLZ turn-off time E to Vos CL= 15 pF; RL=1kΩ;
V
CC =5V 55ns
C
Iinput capacitance 2 2 pF
CPD power dissipation capacitance CL= 50 pF; f = 10 MHz;
notes 1 and 2 13 15 pF
CSswitch capacitance 4 4 pF
2002 Jun 06 3
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PINNING
INPUT E SWITCH
L OFF
HON
TYPE NUMBER PACKAGE
TEMPERATURE
RANGE PINS PACKAGE MATERIAL CODE MARKING
74AHC1G66GW −40 to +125 °C 5 SC-88A plastic SOT353 AL
74AHCT1G66GW −40 to +125 °C 5 SC-88A plastic SOT353 CL
74AHC1G66GV −40 to +125 °C 5 SC-74A plastic SOT753 A66
74AHCT1G66GV −40 to +125 °C 5 SC-74A plastic SOT753 C66
PIN SYMBOL DESCRIPTION
1 Y independent input/output
2 Z independent output/input
3 GND ground (0 V)
4 E enable input (active HIGH)
5V
CC supply voltage
handbook, halfpage
1
2
3
5
4
MNA074
66
VCC
Z
E
GND
Y
Fig.1 Pin configuration.
handbook, halfpage
MNA627
YZ
E
Fig.2 Logic symbol.
2002 Jun 06 4
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
handbook, halfpage
MNA076
4 # 12
X1
1
1
Fig.3 IEC logic symbol.
handbook, halfpage
MNA628
VCC
EY
Z
Fig.4 Logic diagram.
2002 Jun 06 5
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
note 1.
Note
1. To avoid drawing VCC current out of pin Z, when switch current flows into pin Y, the voltage drop across the
bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of pin Y.
In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed
VCC or GND.
SYMBOL PARAMETER CONDITIONS 74AHC1G66 74AHCT1G66 UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
VIinput voltage 0 −5.5 0 −5.5 V
VSswitch voltage 0 −VCC 0−VCC V
Tamb operating ambient
temperature see DC and AC
characteristicsper
device
−40 +25 +125 −40 +25 +125 °C
tr,t
finput rise and fall times VCC = 3.3 ±0.3 V −−100 −−−ns/V
VCC = 5.0 ±0.5 V −−20 −−20 ns/V
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage −0.5 +7.0 V
IIK input diode current VI<−0.5 V or VI>V
CC + 0.5 V −−20 mA
ISK switch diode current VS<−0.5 V or VS>V
CC + 0.5 V −±20 mA
ISswitch source or sink current −0.5V<V
O<V
CC + 0.5 V −±25 mA
ICC, IGND VCC or GND current −±75 mA
Tstg storage temperature −65 +150 °C
PDpower dissipation per package for temperature range from −40 to +125 °C−250 mW
2002 Jun 06 6
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
DC CHARACTERISTICS
Type 74AHC1G66
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
OTHER VCC
(V) 25 −40 to +85 −40 to +125
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
VIH HIGH-level input
voltage 2.0 1.5 −−1.5 −1.5 −V
3.0 2.1 −−2.1 −2.1 −V
5.5 3.85 −−3.85 −3.85 −V
VIL LOW-level input
voltage 2.0 −−0.5 −0.5 −0.5 V
3.0 −−0.9 −0.9 −0.9 V
5.5 −−1.65 −1.65 −1.65 V
ILI input leakage
current VI=V
CC or GND 5.5 −−0.1 −1.0 −2.0 µA
ISanalog switch
current, OFF-state VI=V
IH or VIL;
|VS|=V
CC −GND;
see Fig.5
5.5 −−0.1 −1.0 −4.0 µA
analog switch
current, ON-state VI=V
IH or VIL;
|VS|=V
CC −GND;
see Fig.6
5.5 −−0.1 −1.0 −4.0 µA
ICC quiescent supply
current VI=V
CC or GND;
Vis = GND or VCC;
Vos =V
CC or GND
5.5 −−1.0 −10 −40 µA
CIinput capacitance
of enable input (E) −210−10 −10 pF
CSmaximum switch
capacitance independent I/O −410−10 −10 pF
2002 Jun 06 7
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
Type 74AHCT1G66
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
OTHER VCC (V) 25 −40 to +85 −40 to +125
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
VIH HIGH-level
input voltage 4.5 to 5.5 2.0 −−2.0 −2.0 −V
VIL LOW-level
input voltage 4.5 to 5.5 −−0.8 −0.8 −0.8 V
ILI input leakage
current VI=V
CC or GND 5.5 −−0.1 −1.0 −2.0 µA
ISanalog switch
current,
OFF-state
VI=V
IH or VIL;
|VS|=V
CC −GND;
see Fig.5
5.5 −−0.1 −1.0 −4.0 µA
analog switch
current,
ON-state
VI=V
IH or VIL;
|VS|=V
CC −GND;
see Fig.6
5.5 −−0.1 −1.0 −4.0 µA
ICC quiescent
supply current VI=V
CC or GND;
Vis = GND or VCC;
Vos =V
CC or GND
5.5 −−1.0 −10 −40 µA
∆ICC additional
quiescent
supply current
VI= 3.4 V;
other inputs at
VCC or GND;
IO=0
5.5 −−1.35 −1.5 −1.5 mA
CIinput
capacitanceof
enable
input (E)
−210−10 −10 pF
CSmaximum
switch
capacitance
independent I/O −410−10 −10 pF
2002 Jun 06 8
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
Type 74AHC1G66 and 74AHCT1G66
For 74AHC1G66: VCC = 2.0, 3.0, 4.5 and 5.5 V; or 74AHCT1G66: VCC = 4.5 and 5.5 V.
Note
1. At supply voltage approaching 2 V, the analog switch ON-resistance becomes extremely non-linear. Therefore, it is
recommended that these devices are used to transmit digital signals only, when using this supply voltage.
SYMBOL PARAMETER TEST
CONDITIONS
Tamb (°C)
UNIT25 −40 to +85 −40 to +125
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
VCC = 2.0 V; IS= 1 mA; VI=V
IH or VIL;see Figs 7 and 8
RON ON-resistance
(peak) Vis =V
CC to GND −148(1) −−−−−Ω
ON-resistance
(rail) Vis = GND −30 −−−−−Ω
V
is =V
CC −28 −−−−−Ω
V
CC = 3.0 to 3.6 V; IS= 10 mA; VI=V
IH or VIL;see Figs 7 and 8
RON ON-resistance
(peak) Vis =V
CC to GND −28 50 −70 −110 Ω
ON-resistance
(rail) Vis = GND −20 50 −65 −90 Ω
Vis =V
CC −18 50 −65 −90 Ω
VCC = 4.5 to 5.5 V; IS= 10 mA; VI=V
IH or VIL;see Figs 7 and 8
RON ON-resistance
(peak) Vis =V
CC to GND −15 30 −40 −60 Ω
ON-resistance
(rail) Vis = GND −15 22 −26 −40 Ω
Vis =V
CC −13 22 −26 −40 Ω
2002 Jun 06 9
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
handbook, full pagewidth
MNA079
AA
YZ
V
I = VCC or GND VO = GND or VCC
LOW
(from enable input)
GND
Fig.5 Test circuit for measuring OFF-state current.
handbook, full pagewidth
MNA080
AA
YZ
V
I = VCC or GND VO (open circuit)
HIGH
(from enable input)
GND
Fig.6 Test circuit for measuring ON-state current.
handbook, full pagewidth
MNA629
V
YZ
I
is
Vis = 0 to VCC
GND
HIGH
(from enable input)
GND
Fig.7 Test circuit for measuring ON-resistance (RON).
2002 Jun 06 10
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
handbook, halfpage
0246
V
is (V)
RON
(Ω)
40
30
10
0
20
MNA630
VCC = 3.0 V
4.5 V 5.5 V
Fig.8 TypicalON-resistance as afunction of input
voltage.
2002 Jun 06 11
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
AC CHARACTERISTICS
Type 74AHC1G66
GND = 0 V; tr=t
f≤3ns.
Note
1. Typical values are measured at VCC = 2.0 V; VCC = 3.3 V or VCC = 5.0 V and Tamb =25°C.
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
WAVEFORMS CL
(pF) 25 −40 to +85 −40 to +125
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
VCC = 2.0 V; RL=1kΩ; note 1
tPHL/tPLH propagation delay
Vis to Vos
see Figs 13 and 16 50 −2.2 5.0 −6.0 −7.0 ns
tPZH/tPZL turn-on time
EtoV
os
see Figs 14 and 16 15 −7.0 25.0 −33.0 −40.0 ns
50 −11.0 35.0 −46.0 −57.0 ns
tPHZ/tPLZ turn-off time
EtoV
os
see Figs 14 and 16 15 −9.0 25.0 −33.0 −40.0 ns
50 −13.0 35.0 −46.0 −57.0 ns
VCC = 3.0 to 3.6 V; RL=1kΩ; note 1
tPHL/tPLH propagation delay
Vis to Vos
see Figs 13 and 16 50 −1.0 2.0 −3.0 −4.0 ns
tPZH/tPZL turn-on time
EtoV
os
see Figs 14 and 16 15 −4.0 11.0 −14.0 −18.0 ns
50 −5.8 15.0 −20.0 −25.0 ns
tPHZ/tPLZ turn-off time
EtoV
os
see Figs 14 and 16 15 −6.0 11.0 −14.0 −18.0 ns
50 −8.4 15.0 −20.0 −25.0 ns
VCC = 4.5 to 5.5 V; RL=1kΩ; note 1
tPHL/tPLH propagation delay
Vis to Vos
see Figs 13 and 16 50 −0.6 1.0 −2.0 −3.0 ns
tPZH/tPZL turn-on time
EtoV
os
see Figs 14 and 16 15 −3.0 8.0 −10.0 −13.0 ns
50 −4.4 11.0 −13.0 −17.0 ns
tPHZ/tPLZ turn-off time
EtoV
os
see Figs 14 and 16 15 −5.0 8.0 −10.0 −13.0 ns
50 −6.1 11.0 −13.0 −17.0 ns
2002 Jun 06 12
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
74AHCT1G66
GND = 0 V; tr=t
f≤3ns.
Note
1. All typical values are measured at VCC =5V.
TYPE 74AHC1G66 AND 74AHCT1G66
Recommended conditions and typical values. GND = 0 V; tr=t
f=3ns.V
is is the input voltage at pins Yor Z, whichever
is assigned as an input. Vos is the output voltage at pin Yor Z, whichever is assigned as an output.
Notes
1. Adjust input voltage Vis is 0 dBm level (0 dBm=1mWinto 600 Ω).
2. Adjust input voltage Vis is 0 dBm level at Vos for 1 MHz (0 dBm=1mWinto 50 Ω).
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
WAVEFORMS CL
(pF) 25 −40 to +85 −40 to +125
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
VCC = 4.5 to 5.5 V; RL=1kΩ; note 1
tPHL/tPLH propagation delay
Vis to Vos
see Figs 13 and 16 50 −0.7 1.0 −2.0 −3.0 ns
tPZH/tPZL turn-on time
EtoV
os
see Figs 14 and 16 15 −3.0 7.0 −10.0 −13.0 ns
50 −4.7 10.0 −13.0 −17.0 ns
tPHZ/tPLZ turn-off time
EtoV
os
see Figs 14 and 16 15 −5.0 8.0 −10.0 −13.0 ns
50 −6.5 11.0 −13.0 −17.0 ns
SYMBOL PARAMETER TEST CONDITIONS Vis(p-p) (V) VCC (V) TYPICAL UNIT
sine-wave distortion at
fin = 1 kHz RL=10kΩ;
C
L= 50 pF; see Fig.9 2.5 3.0 to 3.6 0.025 %
4.0 4.5 to 5.5 0.015 %
sine-wave distortion at
fin = 10 kHz RL=10kΩ;
C
L= 50 pF; see Fig.9 2.5 3.0 to 3.6 0.025 %
4.0 4.5 to 5.5 0.015 %
switch OFF signal
feed-through RL= 600 Ω;
CL= 50 pF;
f = 1 MHz; see Fig.10
note 1 3.0 to 3.6 −50 dB
4.5 to 5.5 −50 dB
fmax minimumfrequencyresponse
(−3 dB) RL=50Ω;
C
L= 10 pF;
see Figs 11 and 12
note 2 3.0 to 3.6 230 MHz
4.5 to 5.5 280 MHz
2002 Jun 06 13
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
handbook, full pagewidth
MNA632
10 µF
RL
RL
Vos
VCC
Vis
CLDISTORTION
METER
Z/YY/Z
GND
fin = 1 kHz
sine-wave channel
ON
Fig.9 Test circuit for measuring sine-wave distortion.
handbook, full pagewidth
MNA633
0.1 µF
RL
RL
Vos
VCC
Vis
CLdB
Z/YY/Z
GND
channel
OFF
Fig.10 Test circuit for measuring switch OFF signal feed-through.
2002 Jun 06 14
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
handbook, full pagewidth
−4
0
2
4
(dB)
−2
MNA643
104105106107108109
f (Hz)
Fig.11 Typical frequency response.
Test conditions: VCC = 4.5 V; GND = 0 V; RL=50Ω; RSOURCE =1kΩ.
handbook, full pagewidth
MNA631
0.1 µF
RL
RL
Vos
VCC
Vis
CLdB
Z/YY/Z
GND
channel
ON
sine-wave
Fig.12 Test circuit for measuring minimum frequency response.
Adjust input voltage to obtain 0 dBm at Vos when f = 1 MHz.
After set-up, the frequency is increased to obtain a reading of −3dBatV
os.
2002 Jun 06 15
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
AC WAVEFORMS
handbook, halfpage
MNA593
tPLH tPHL
VM
VM
Vis
Vos
GND
VI
VOH
VOL
VIINPUT
REQUIREMENTS VMINPUT
GND to VCC 50% VCC
VOL and VOH are typical output voltage drop that occur with the output load.
Fig.13 The input (Vis) to output (Vos) propagation delays.
handbook, full pagewidth
MNA634
tPLZ
tPHZ
outputs
disabled outputs
enabled
VOH − 0.3 V
VOL + 0.3 V
outputs
enabled
output
LOW-to-OFF
OFF-to-LOW
output
HIGH-to-OFF
OFF-to-HIGH
E input
VI
VCC
VM
VOL
VOH
GND
GND
tPZL
tPZH
VM
VM
Fig.14 The turn-on and turn-off times.
TYPE VIINPUT
REQUIREMENTS VMINPUT VMOUTPUT
AHC1G GND to VCC 50% VCC 50% VCC
AHCT1G GND to 3.0 V 1.5 V 1.5 V
2002 Jun 06 16
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
handbook, full pagewidth
MNA595
tTHL (tf)t
TLH (tr)
VM
tW
positive
input pulse
negative
input pulse
0 V
amplitude
90%
10%
tTLH (tr)t
THL (tf)
VM
tW
0 V
amplitude
90%
10%
Fig.15 Input pulse definitions.
FAMILY VIINPUT
REQUIREMENTS VMINPUT
AHC1G GND to VCC 50% VCC
AHCT1G GND to 3.0 V 1.5 V
tr=t
f= 3 ns, when measuring fmax, there is no constraint on tr,t
f
with 50% duty factor.
handbook, full pagewidth
open
GND
VCC
VCC
VIVO
MNA635
D.U.T.
CL
RT
1 kΩ
PULSE
GENERATOR
Vis
S1
Fig.16 Load circuitry for switching times.
Definitions for test circuit:
CL= load capacitance including jig and probe capacitance (see “AC characteristics” for values).
RT= termination resistance should be equal to the output impedance Zo of the pulse generator.
TEST S1Vis
tPLH/tPHL open pulse
tPLZ/tPZL VCC GND
tPHZ/tPZH GND VCC
2002 Jun 06 17
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
PACKAGE OUTLINES
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT353
wBM
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT353
UNIT A1
max bpcD
E (2) e1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28SC-88A
2002 Jun 06 18
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT753 SC-74A
wBM
b
p
D
e
A
A
1
L
p
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT753
UNIT A1bpcDEH
E
L
p
Qywv
mm 0.100
0.013 0.40
0.25 3.1
2.7
0.26
0.10 1.7
1.3
e
0.95 3.0
2.5 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2 0.33
0.23
A
1.1
0.9
02-04-16
2002 Jun 06 19
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
SOLDERING
Introduction to soldering surface mount packages
Thistextgivesaverybriefinsighttoa complex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certainsurfacemount ICs, but itisnotsuitableforfinepitch
SMDs. In these situations reflow soldering is
recommended.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuit board by screenprinting,stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Wave soldering
Conventional single wave soldering is not recommended
forsurfacemount devices (SMDs) or printed-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
•Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
•For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
•Forpackageswith leads on foursides,thefootprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2002 Jun 06 20
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. Formoredetailedinformation on the BGA packagesrefertothe
“(LF)BGAApplicationNote
”(AN01026);ordera copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE(1) SOLDERING METHOD
WAVE REFLOW(2)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,
HVSON, SMS not suitable(3) suitable
PLCC(4), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(4)(5) suitable
SSOP, TSSOP, VSO not recommended(6) suitable
2002 Jun 06 21
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers usingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of theseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Jun 06 22
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
NOTES
2002 Jun 06 23
Philips Semiconductors Product specification
Bilateral switch 74AHC1G66; 74AHCT1G66
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613508/03/pp24 Date of release: 2002 Jun 06 Document order number: 9397 750 09711
