CMBT3904E NPN
CMBT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMBT3904E
(NPN) and CMBT3906E (PNP) are general purpose
transistors with enhanced specifications. These
devices are ideal for applications where ultra small
size and power dissipation are the prime requirements.
Packaged in the FEMTOmini™ SOT-923 package,
these transistors provide performance characteristics
suitable for the most demanding size constrained
applications.
MARKING CODES: CMBT3904E: B
CMBT3906E: G
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 100 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 1250 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN PNP
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
ICEV V
CE=30V, VEB=3.0V 50 nA
BVCBO I
C=10µA 60 115 90 V
BVCEO I
C=1.0mA 40 60 55 V
BVEBO I
E=10µA 6.0 7.5 7.9 V
VCE(SAT) I
C=10mA, IB=1.0mA 0.057 0.050 0.100 V
VCE(SAT) I
C=50mA, IB=5.0mA 0.100 0.100 0.200 V
VBE(SAT) I
C=10mA, IB=1.0mA 0.650 0.750 0.750 0.850 V
VBE(SAT) I
C=50mA, IB=5.0mA 0.850 0.850 0.950 V
Enhanced specification.
FEATURES
• Very Small Package Size
• 200mA Collector Current
• Low VCE(SAT) (0.1V Typ @ 50mA)
Miniature 0.8 x 0.6 x 0.4mm
Ultra Low height profile
FEMTOmini Surface Mount Package
APPLICATIONS
• DC / DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered applications including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SOT-923 CASE
R1 (8-January 2010)
www.centralsemi.com
CMBT3904E NPN
CMBT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
Enhanced specification.
ELECTRICAL CHARACTERISTICS - Continued: NPN PNP
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
hFE V
CE=1.0V, IC=0.1mA 90 240 130
hFE V
CE=1.0V, IC=1.0mA 100 235 150
hFE V
CE=1.0V, IC=10mA 100 215 150 300
hFE V
CE=1.0V, IC=50mA 70 110 120
hFE V
CE=1.0V, IC=100mA 30 50 55
fT V
CE=20V, IC=10mA, f=100MHz 300 MHz
Cob V
CB=5.0V, IE=0, f=1.0MHz 4.0 pF
Cib V
BE=0.5V, IC=0, f=1.0MHz 8.0 pF
hie V
CE=10V, IC=1.0mA, f=1.0kHz 1.0 12 kΩ
hre V
CE=10V, IC=1.0mA, f=1.0kHz 0.1 10 X10-4
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 100 400
hoe V
CE=10V, IC=1.0mA, f=1.0kHz 1.0 60 µS
NF VCE=5.0V, IC=100µA, RS =1.0k,
f=10Hz to 15.7kHz 4.0 dB
td V
CC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns
tr V
CC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns
ts V
CC=3.0V, IC=10mA, IB1=IB2=1.0mA 200 ns
tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 ns
SOT-923 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMBT3904E: B
CMBT3906E: G
www.centralsemi.com
R1 (8-January 2010)