934061296112 - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

100 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3600 MHz.

[1] PL(M) stands for peak output power.

[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). P AR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.

[3] Measured within 30 kHz bandwidth.

1.2 Features and benefits

Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability

on the CCDF. Channel band width is 1.23 MHz) at a frequen cy of 3400 MHz, 3500 MHz

and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA:

Qualified up to a maximum VDS operat ion of 32 V

Integrated ESD protection

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation

Internally matched for ease of use

Low gold plating thickness on leads

Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances

(RoHS)

BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

Rev. 2 — 24 October 2011 Product data sheet

Table 1. Typical performance

Typical RF performance at Tcase =25



C in a class-AB production test circuit.

Mode of operation f VDS PL(AV) PL(M) [1] GpDACPR885k ACPR1980k

(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc)

1-carrier N-CDMA[2] 3400 to 3600 28 18.5 130 13 21.5 47.5[3] 65[3]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Product data sheet Rev. 2 — 24 October 2011 2 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

1.3 Applications

RF power amplifiers for base st ations and multicarrier applicat ions in the 3400 MHz to

3600 MHz frequency range

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

Table 2. Pin ning

Pin Description Simplified outline Graphic symbol

BLF6G38-100 (SOT502A)

1drain

2gate

3source [1]

BLF6G38LS-100 (SOT5 02B)

1drain

2gate

3source [1]

sym112

Table 3. Ordering information

Type number Package

Name Description Version

BLF6G38-100 - flanged LDMOST ceramic package; 2 mounting holes;

2 leads SOT502A

BLF6G38LS-100 - earless flanged LDMOST ceramic package; 2 leads SOT502B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

IDdrain current - 34 A

Tstg storage temperature 65 +150 C

Tjjunction temperature - 200 C

Product data sheet Rev. 2 — 24 October 2011 3 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

5. Thermal characteristics

6. Characteristics

7. Application information

[1] Measured within 30 kHz bandwidth.

7.1 Ruggedness in class-AB operation

The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS =28V; I

Dq =1050mA; P

L = PL(1dB); f = 3600 MHz.

Table 5. Thermal characteristics

Symbol Parameter Conditions Type Typ Unit

Rth(j-case) thermal resistance from junction to case Tcase =80C; PL(AV) = 18.5 W BLF6G38-100 0.58 K/W

BLF6G38LS-100 0.43 K/W

Table 6. Ch aracteristics

Tj = 25



C per section; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D=0.6mA 65--V

VGS(th) gate-source threshold voltage VDS = 10 V; ID= 180 mA 1.4 2 2.4 V

IDSS drain leakage current VGS =0V; V

DS =28V - - 5 A

IDSX drain cut-off current VGS =V

GS(th) +3.75V; V

DS = 10 V 26.5 33 - A

IGSS gate leakage current VGS =11V; V

DS = 0 V - - 450 nA

gfs forward transconductance VDS =10V; I

D=6.3A - 12 - S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V; ID= 6.3 A - 0.09 0.15 

Crs feedback capacitance VGS =0 V; VDS =28V; f=1MHz - 2.6 - pF

Table 7. Application information

Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes

8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f1= 3400 MHz; f2= 3500 MHz;

f3= 3600 MHz; RF performance at VDS =28V; I

Dq = 1050 mA; Tcase =25



C; unless otherwise specified, in a class-AB

production circuit.

Symbol Parameter Conditions Min Typ Max Unit

PL(M) peak output power PL(AV) = 18.5 W 110 130 - W

Gppower gain PL(AV) =18.5W 11.5 13 - dB

RLin input return loss PL(AV) =18.5W - 10 - dB

Ddrain efficiency PL(AV) = 18.5 W 18.5 21.5 - %

ACPR885k adjacent channel power ratio (885 kHz) PL(AV) =18.5W [1] -47.5 45 dBc

ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) =18.5W [1] -65 63 dBc

Product data sheet Rev. 2 — 24 October 2011 4 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

7.2 NXP WiMAX signal

7.2.1 WiMAX signal description

frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;

frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;

FFT = 1024; zone type = PUSC;  = 97.7 %; number of symbols = 46;

number of subchannels = 30; PAR = 9.5 dB.

Preamble: 1 symbol  30 subchannels; PL = PL(nom) + 3.86 dB.

7.2.2 Graphs

Table 8. Frame structure

Frame conte n ts Modulation techni que Data length

Zone 0 FCH 2 symbols  4 subchannels QPSK 1/2 3 bit

Zone 0 data 2 symbols  26 subchannels 64 QAM 3/4 692 bit

Zone 0 data 44 symbols  30 subchannels 64 QAM 3/4 10000 bit

VDS =28V; I

Dq = 1050 mA; f = 3500 MHz. VDS =28V; I

Dq = 1050 mA; f = 3500 MHz.

Fig 1. EVM as a function of load power;

typical values Fig 2. Power gain and drain efficiency as function of

average load power; typical values

PL (W)

10−1102

101

001aaj033

EVM

(%)

001aaj034

(dB)

ηD

(%)

PL(AV) (W)

10−1102

101

ηD

Product data sheet Rev. 2 — 24 October 2011 5 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

7.3 Single carrier NA IS-95 broadband performance at 2 W average

7.3.1 Graphs

VDS =28V; I

Dq = 1050 mA; f = 3500 MHz.

Fig 3. Adjacent channel power ratio a s a function of average load power; typi ca l v al ues

001aaj036

−45

−55

−35

−25

ACPR

(dBc)

−65

PL(AV) (W)

10−1102

101

ACPR10M

ACPR20M

ACPR30M

VDS =28V; I

Dq = 1050 mA; Single Carrier IS-95;

PAR = 9.7 dB at 0.01 % probability. VDS =28V; I

Dq = 1050 mA; single carrier IS-95;

PAR = 9.7 dB at 0.01 % probability.

(1) Low frequency component

(2) High frequency component

Fig 4. Power gain and drain efficiency as function of

frequency; typical values Fig 5. Adjacen t channel power ratio as a function of

frequency; typical values

f (MHz)

3400 360035503450 3500

001aaj037

(dB)

ηD

(%)

ηD

f (MHz)

3400 360035603480 35203440

001aaj039

−60

−50

−40

ACPR

(dBc)

−70

ACPR1980k

ACPR1500k

ACPR885k

(2)

(1)

(2)

(1)

(2)

Product data sheet Rev. 2 — 24 October 2011 6 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

VDS =28V; I

Dq = 1050 mA; f = 3500 MHz;

single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;

channel bandwidth = 1.23 MHz.

VDS =28V; I

Dq = 1050 mA; f = 3500 MHz;

single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;

channel bandwidth = 1.23 MHz; IBW = 30 kHz.

(1) Low frequency component

(2) High frequency component

Fig 6. Power gain and drain efficiency as function of

load power; typical values Fig 7. Adjacen t channel power ratio as a function of

load power; typical values

VDS =28V; I

Dq = 1050 mA; single carrier IS-95;

PAR = 9.7 dB at 0.01 % probability;

channel bandwidth = 1.23 MHz.

(1) f = 3400 MHz

(2) f = 3500 MHz

(3) f = 3600 MHz

VDS =28V; I

Dq = 1050 mA; single carrier IS-95;

PAR = 9.7 dB at 0.01 % probability;

channel bandwidth = 1.23 MHz.

(1) f = 3400 MHz

(2) f = 3500 MHz

(3) f = 3600 MHz

Fig 8. Power gain as a function of load power;

typical values Fig 9. Input power as a function of load power;

typical values

PL(AV) (W)

110

001aaj041

(dB)

ηD

(%)

ηD

PL(AV) (W)

10−1102

101

001aaj042

−65

−55

−75

−45

−35

ACPR

(dBc)

−85

ACPR1980k

ACPR1500k

ACPR885k

(2)

(1)

(2)

(1)

(2)

001aaj043

(dB)

PL (W)

10−1102

101

(1)

(2)

(3)

001aaj045

(W)

PL (W)

10−1102

101

(1)

(2)

(3)

Product data sheet Rev. 2 — 24 October 2011 7 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

8. Test information

Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and

thickness = 0.76 mm.

See Table 9 for list of components.

Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit

Table 9. List of co mponents

For test circuit, see Figure 10.

Component Description Value Remarks

C1, C4, C5, C11 m ultilayer ceramic chip capacitor 10 pF ATC 100A

C2 multilayer ceramic chip capacitor 0.2 pF ATC 100A

C3 multilayer ceramic chip capacitor 4.7 F; 50 V TDK C4532X7R1H475M

C6, C7 multilayer ceramic chip capacitor 100 nF Vishay VJ1206Y104KXB

C8 multilayer ceramic chip capacitor 10 F; 50 V TDK C5750X7R1H106M

C9 multilayer ceramic chip capacitor 1.5 F; 50 V TDK C3225X7R1H155M

C10 electrolytic capacitor 470 F; 63 V

L1 ferrite SMD bead -

R1, R2, R3 SMD resistor 9.1 SMD 1206

Table 10. Meas ured test circuit impedances

f ZiZo

(GHz) () ()

3.4 0.34 + j3.36 0.44 + j3.39

3.5 0.52 + j3.86 0.56 + j3.91

3.6 1.36 + j4.85 1.38 + j5.11

001aaj048

BLF6G38-100

Input Rev 2

30RF35

NXP

BLF6G38-100

Output Rev 2

30RF35

NXP

PCB1 PCB2

R1 C4

C8 L1

C10

C11

Product data sheet Rev. 2 — 24 October 2011 8 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

9. Package outline

Fig 11. Package outline SOT502A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502A 99-12-28

03-01-10

0 5 10 mm

scale

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25 0.5127.94

1.14

0.89

34.16

33.91

5.33

4.32

3.38

3.12

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.01 0.021.100

0.045

0.035 1.345

1.335

0.210

0.170 0.133

0.123 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

w1AB

M M M

Product data sheet Rev. 2 — 24 October 2011 9 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

Fig 12. Package outline SOT502B

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502B 03-01-10

07-05-09

0 5 10 mm

scale

Earless flanged LDMOST ceramic package; 2 leads SOT502B

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25

1.14

0.89

20.70

20.45

5.33

4.32

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.010

0.045

0.035 0.815

0.805

0.210

0.170 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Product data sheet Rev. 2 — 24 October 2011 10 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

10. Abbreviations

11. Revision history

Table 11. Abbreviations

Acronym Description

CCDF Complementary Cumulative Distribution Function

EVM Error Vector Magnitude

FCH Frame Control Header

FFT Fast Fourier Transform

IBW Instantaneous BandWidth

IS-95 Interim Standard 95

LDMOS Laterally Diffused Metal-Oxide Semiconductor

LDMOST Laterally Diffused Metal-Oxide Semiconductor T ransistor

NA North American

N-CDMA Narrowband Code Division Multiple Access

PAR Peak-to-Average power Ratio

PUSC Partial Usage SubChannels

RF Radio Frequency

QAM Quadrature Amplitude Modulatio n

QPSK Quadrature Phase Shift Keying

SMD Surface Mounted Device

VSWR Voltage Standing-Wave Ratio

WCS Wireless Communications Service

WiMAX Worldwide Interoperability for Microwave Access

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF6G38-100_6G38LS-100 v.2 20111024 Product data sheet - BLF6G38-100_6G38LS-100_1

Modifications: •Table 1 on page 1: PL(p) has been changed to PL(M).

•Table 7 on page 3: PL(AV) has been changed to PL(M).

BLF6G38-100_6G38LS-100_1 20081111 Product data sheet - -

Product data sheet Rev. 2 — 24 October 2011 11 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

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representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental ,

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Notwithstanding any damages that customer might incur for any reason

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malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

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NXP Semiconductors does not accept any liabili ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

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testing for th e customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the obj ective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 24 October 2011 12 of 13

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

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own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 24 October 2011

Document identifier: BLF6G38-100_6G38LS-100_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation . . . . . . . . . 3

7.2 NXP WiMAX signal. . . . . . . . . . . . . . . . . . . . . . 4

7.2.1 WiMAX signal description. . . . . . . . . . . . . . . . . 4

7.2.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.3 Single carrier NA IS-95 broadband

performance at 2 W average . . . . . . . . . . . . . . 5

7.3.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13