Photocoupler K4N25 * K4N25A These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. (Unit : mm) 7.62 FEATURES 6.4 0.25 1 2 8.9 Orientation Mark 3 MAXIMUM RATINGS Parameter -15 2.7Min. 0.25 Rating (Ta=25 ) Unit Forward Current IF 80 mA Reverse Voltage VR 5 V Peak Forward Current *1 IFP 3 A Power Dissipation PD 70 mW *4 Collector-Emitter Breakdown Voltage BVCEO Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage BVECO 70 V IC 50 mA PC 150 mW Viso AC2500 Vrms Tstg -55~+125 Topr -30~+100 Tsol 260 Ptot 200 mW Collector Power Dissipation Input to Output Isolation Voltage *2 Storage Temperature Operating Temperature *3 Total Power Dissipation 5 4 1 2 3 0.5 2.54 Symbol Collector Current 6 0.51Min. 3.8 * Interface between two circuits of different potential * Vending Machine, Voltage Regulator * Traffic Controller System * Programmable Controller Lead Soldering Temperature 0 0.25 0.25 APPLICATIONS Output 0.25 6.4 4 0.25 * Switching Time - Typ. 3 * Collector-Emitter Voltage : Min.30V * Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V) * Electrical Isolation Voltage : AC2500Vrms * UL Recognized File No. E107486 Input 5 6 *1. Input current with 100 pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec *4. Customer Option 1/3 35 V 1.2 Photocoupler K4N25 * K4N25A ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol (Ta=25 , unless otherwise noted) Min. Max. Unit. Typ. Forward Voltage VF IF=10mA - 1.15 1.30 V Reverse Current IR VR=5V - - 10 Capacitance CT V=0, f=1MHz - 30 - pF 35 - - V Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage BVCBO IC=0.1mA 70 - - V - - 100 nA Collector Dark Current Capacitance Current Transfer Ratio *5 Collector-Emitter Saturation Voltage Coupled Condition Input-Output Capacitance ICEO IF=0, VCE=10V - 10 - pF 20 - - % IF=50mA, IC=1mA - 0.15 0.4 V V=0, f=1MHz - 1 - pF CCE VCE=0, f=1MHz CTR IF=10mA, VCE=10V VCE(SAT) CIO RH=40~60%, V=500V - 10 - Rise Time tr VCE=5V, RL=100 - 3 - Fall Time tf IC=2mA - 3 - Input-Output Isolation Resistance RIO *5. CTR=(IC/IF) X 100 (%) 2/3 11 Photocoupler K4N25 * K4N25A Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 60 100 80 250 100 200 80 150 100 50 0 -20 Ambient Temperature Ta ( ) Dark Current I CEO () Collector current I C (mA) 40 20 60 80 I F=20mA P C (MAX.) I F =5mA 10 Ta=-55 0.4 100 0.8 1.2 1.6 Forward Voltage VF (V) Collector Current vs. Ambient Temperature 100 I F=30mA I F=10mA 20 0 0 1 20 T a=25 Dark Current vs. Ambient Temperature T a=25 30 Ta=70 40 Ambient Temperature Ta ( ) Collector Current vs. Collector-Emitter Voltage 40 60 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 0.1 V CE =10V 0.01 I F=20mA 10 I F=10mA I F=5mA 1 I F=1mA I F=1mA 0 2 4 6 8 10 0.001 0 Collector-Emitter voltage VCE (V) 100 Collector Current I C (mA) Response Time tr , t f ( s) 100 tr 60 80 100 tf 1 0 -20 0 20 40 60 Switching Time Test Circuit R VIN VCC RL T a=25 V CE =10V VO 10 1 Test Circuit 0.1 Input 0.01 Output 10% 0.1 0.1 1.0 Load Resistance R L ( ) 2.0 0.001 0.1 80 Ambient Temperature Ta ( ) Collector Current vs. Forward Current VCE =5V I C=2mA T a=25 10 40 Ambient Temperature Ta ( ) Response Time vs. Load Resistance 500 20 1 10 Forward Current I F (mA) 3/3 100 90% tr tf Waveform