SMF5V0A to SMF58A
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 1Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface-Mount ESD Protection Diodes
MARKING (example only)
Bar = cathode marking
YY = type code (see table below)
XX = date code
LINKS TO ADDITIONAL RESOURCES
FEATURES
• 200 W peak pulse power capability with a
10/1000 μs waveform, repetition rate
(duty cycle): 0.01 %
• Low profile package
• Wave and reflow solderable
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
• Low incremental surge resistance, excellent clamping
capability
• “Low Noise” technology - very fast response time
• AEC-Q101 qualified available
• Compatible to SOD-123W package case outline or
SOD-123F and SOD-123FL
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SMF (DO-219AB)
eSMP® Series
20278
12
YY
22623
XX
3
3
3
D
D
D
3
D
3D Models
Simulation
Tools
Available
Available
ORDERING INFORMATION
PART
NUMBER
(EXAMPLE)
ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE
ORDERING CODE
(EXAMPLE)
AEC-Q101
QUALIFIED
RoHS-COMPLIANT +
LEAD (Pb)-FREE TERMINATIONS TIN
PLATED
3K PER 7" REEL
(8 mm TAPE),
MOQ = 30K
10K PER 13" REEL
(8 mm TAPE),
MOQ = 50K
STANDARD HALOGEN-FREE
SMF5V0A- E 3 -08 SMF5V0A-E3-08
SMF5V0A- M 3 -08 SMF5V0A-M3-08
SMF5V0A- H E 3 -08 SMF5V0A-HE3-08
SMF5V0A- H M 3 -08 SMF5V0A-HM3-08
SMF5V0A- E 3 -18 SMF5V0A-E3-18
SMF5V0A- M 3 -18 SMF5V0A-M3-18
SMF5V0A- H E 3 -18 SMF5V0A-HE3-18
SMF5V0A- H M 3 -18 SMF5V0A-HM3-18
PACKAGE DATA
PACKAGE
NAME
MOLDING
COMPOUND
WEIGHT
(mg)
HEIGHT
MAX.
(mm)
LENGTH
MAX.
(mm)
WIDTH
MAX.
(mm)
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE
SENSITIVITY
LEVEL
WHISKER TEST
ACC. JESD 201
SOLDERING
CONDITIONS
SMF
(DO-219AB)
Standard 15 1.08 3.9 1.9 UL 94 V-0 MSL level 1
(acc. J-STD-020) Class 2 Peak temperature
max. 260 °C
Halogen-free
SMF5V0A to SMF58A
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 2Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current tp = 10/1000 μs waveform IPPM see “Electrical Characteristics” A
Peak pulse power tp = 8/20 μs waveform acc. IEC 61000-4-5 PPP
1000 W
tp = 10/1000 μs waveform 200 W
Peak forward surge current 8.3 ms single half sine-wave IFSM 50 A
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Thermal resistance Mounted on epoxy glass PCB with 3 mm x 3 mm,
Cu pads ( ≥ 40 μm thick) RthJA 180 K/W
Forward clamping voltage IF = 50A, tp = 400 μs VF2.5 V
Junction temperature TJ175 °C
Storage temperature range Tstg -65 to +175 °C
Operating temperature range Top -65 to +175 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
TYPE CODE
REVERSE
BREAKDOWN
VOLTAGE
at I
T
,
t
p
= 5 ms
TEST
CURRENT
STAND-OFF
VOLTAGE
MAXIMUM
REVERSE
CURRENT
at V
RWM
MAXIMUM
PEAK PULSE
CURRENT
t
p
= 10/1000 μs
MAXIMUM
REVERSE
CLAMPING
VOLTAGE
at I
PPM
TYPICAL
CAP.
at V
R
= 0 V,
f = 1 MHz
PROTECTION
PATHS
STD. HALOGEN-
FREE
VBR
MIN.
(V)
VBR
MAX.
(V)
IT
(mA)
VRWM
(V)
IR
(μA)
IPPM
(A)
VC MAX.
(V)
CD TYP.
(pF) Nchannel
SMF5V0A AE NE 6.40 7.1 10 5 5 21.7 9.2 1120 1
SMF6V0A AG NG 6.67 7.4 10 6 26 19.4 10.3 1063 1
SMF6V5A AK NK 7.22 8 10 6.5 20 17.9 11.2 938 1
SMF7V0A AM NM 7.78 8.6 10 7 3 16.7 12 843 1
SMF7V5A AP NP 8.33 9.3 1 7.5 0.1 15.5 12.9 773 1
SMF8V0A AR NR 8.89 9.9 1 8 0.1 14.7 13.6 706 1
SMF8V5A AT NT 9.44 10.5 1 8.5 0.1 13.9 14.4 674 1
SMF9V0A AV NV 10 11.2 1 9 0.1 13.5 15.4 640 1
SMF10A AX NX 11.1 12.3 1 10 0.1 11.8 17 562 1
SMF11A AZ NZ 12.2 13.5 1 11 0.1 11 18.2 509 1
SMF12A BE OE 13.3 14.7 1 12 0.1 10.1 19.9 483 1
SMF13A BG OG 14.4 16 1 13 0.1 9.3 21.5 423 1
SMF14A BK OK 15.6 17.3 1 14 0.1 8.6 23.2 392 1
SMF15A BM OM 16.7 18.5 1 15 0.1 8.2 24.4 367 1
SMF16A BP OP 17.8 19.7 1 16 0.1 7.7 26 343 1
SMF17A BR OR 18.9 20.9 1 17 0.1 7.2 27.6 324 1
SMF18A BT OT 20 22.3 1 18 0.1 6.8 29.2 320 1
SMF20A BV OV 22.2 24.6 1 20 0.1 6.2 32.4 283 1
SMF22A BX OX 24.4 27 1 22 0.1 5.6 35.5 271 1
SMF24A BZ OZ 26.7 29.6 1 24 0.1 5.1 38.9 244 1
SMF26A CE PE 28.9 32 1 26 0.1 4.8 42.1 230 1
SMF28A CG PG 31.1 34.4 1 28 0.1 4.4 45.4 227 1
SMF30A CK PK 33.3 36.9 1 30 0.1 4.1 48.4 207 1
SMF33A CM PM 36.7 40.6 1 33 0.1 3.8 53.3 198 1
SMF36A CP PP 40 44.3 1 36 0.1 3.4 58.1 178 1
SMF40A CR PR 44.4 49.1 1 40 0.1 3.1 64.5 172 1
SMF43A CT PT 47.8 52.9 1 43 0.1 2.9 69.4 165 1
SMF45A CV PV 50 55.3 1 45 0.1 2.8 72.7 162 1
SMF48A CX PX 53.3 59 1 48 0.1 2.6 77.4 161 1
SMF51A CZ PZ 56.7 62.7 1 51 0.1 2.4 82.4 151 1
SMF54A CA PA 60 66 1 54 0.1 2.25 88 148 1
SMF58A CC PC 64.4 70.8 1 58 0.1 2.1 95 144 1
SMF5V0A to SMF58A
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 3Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2
(330 Ω/150pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5
Fig. 3 - Peak Pulse Power Rating
Fig. 4 - Pulse Waveform
Fig. 5 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 6 - Typical Capacitance CD vs. Reverse Voltage VR
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
PPP - Peak Pulse Power (kW)
0.1
1
10
0.1 µs 1.0 µs 10 µs
td - Pulse Width (s)
100 µs 1.0 ms 10 ms
Non-repetitive pulse
TA = 25 °C
17250
17415
t
IRSM
(%)
100
90
50
10
t1
t1 = 10 µs
t2 = 1000 µs
t2
140
160
180
100
120
CD in pF
40
60
80
0
20
0.01 0.1 1 10
SMF43A
SMF45A
SMF48A
SMF51A
SMF54A
SMF58A
f = 1MHz
VR in V
22719
22720
0
50
100
150
200
250
300
0.01 0.1 1 10
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
f = 1MHz
C
D
in pF
V
R
in V
SMF5V0A to SMF58A
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 4Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 8 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 9 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 10 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 11 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 12 - Typical Reverse Voltage VR vs. Reverse Current IR
SMF
22722
C
D
in pF
V
R
in V
1000
1200
600
800
200
400
0
20
0.01 0.1 1 10
SMF8V0
SMF5V0A
SMF6V0A
SMF6V5A
SMF7V0A
SMF7V5A
SMF8V0A
SMF8V5A
SMF9V0A
SMF10A
f = 1MHz
22723
VR in V
IR in μA
9
10
7
8
5
6
4
5
0.01 1 100 10 000
TJ = Junction Temperature = 25 °C
SMF8V0A
SMF7V5A
SMF7V0A
SMF6V5A
SMF6V0A
SMF5V0A
22724
VR in V
IR in μA
18
20
14
16
10
12
8
10
0.01 1 100 10 000
 
SMF16A
SMF15A
SMF14A
SMF13A
SMF12A
SMF11A
SMF10A
SMF9V0A
SMF8V5A
TJ = Junction Temperature = 25 °C
22725
VR in V
IR in μA
35
40
30
20
25
15

0.01 1 100 10 000
TJ = Junction Temperature = 25 °C
SMF33A
SMF30A
SMF28A
SMF26A
SMF22A
SMF24A
SMF20A
SMF18A
SMF17A
22726
VR in V
IR in μA
0.01 1 100 10 000
65
70

55
60
45
50
40
45
TJ = Junction Temperature = 25 °C SMF58A
SMF54A
SMF51A
SMF48A
SMF40A
SMF43A
SMF45A
SMF36A
SMF5V0A to SMF58A
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 5Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB)
2.9 [0.114]
2.7 [0.106]
3.9 [0.154]
3.5 [0.138]
0.85 [0.033]
0.35 [0.014]
1.2 [0.047]
0.8 [0.031]
1.9 [0.075]
1.7 [0.067]
1.08 [0.043]
0.88 [0.035]
0.25 [0.010]
0.05 [0.002]
0.1 [0.004]
0 [0.000]
5°
5°
foot print recommendation:
1.3 [0.051] 1.3 [0.051]
2.9 [0.114]
1.4 [0.055]
Reow soldering
1.8 [0.071] min.
Rev. 5 - Date: 09. Oct. 2017
Document no.: S8-V-3915.01-001 (4)
Created - Date: 15. February 2005
22989
Detail Z
enlarged
SMF5V0A to SMF58A
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 6Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORIENTATION IN CARRIER TAPE - SMF (DO-219AB)
SMF
Top view
cathode
Unreeling direction
22670
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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