Document Number: 94383 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 17-Sep-09 1
Surface Mountable
Phase Control SCR, 16 A
25TTS...SPbF High Voltage Series
Vishay High Power Products
DESCRIPTION/FEATURES
The 25TTS...SPbF High Voltage Series of
silicon controlled rectifiers are specifically
designed for medium power switching and
phase control applications. The glass
passivation technology used has reliable
operation up to 125 °C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be
used with Vishay HPP input diodes, switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level.
Compliant to RoHS directive 2002/95/EC.
Halogen-free according to IEC 61249-2-21 definition.
Note
•T
A = 55 °C, TJ = 125 °C, footprint 300 mm2
PRODUCT SUMMARY
VT at 16 A < 1.25 V
ITSM 300 A
VRRM 800 V to 1600 V
D2PA K
Gate
2
Anode
Cathode
1
3
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 µm) copper 3.5 5.5
A
Aluminum IMS, RthCA = 15 °C/W 8.5 13.5
Aluminum IMS with heatsink, RthCA = 5 °C/W 16.5 25.0
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 16 A
IRMS 25
VRRM/VDRM 800 to 1600 V
ITSM 300 A
VT16 A, TJ = 25 °C 1.25 V
dV/dt 500 V/µs
dI/dt 150 A/µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM,
AT 125 °C
mA
25TTS08SPbF 800 800
10
25TTS12SPbF 1200 1200
25TTS16SPbF 1600 1600
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94383
2Revision: 17-Sep-09
25TTS...SPbF High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 93 °C, 180° conduction half sine wave 16
A
Maximum RMS on-state current IRMS 25
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 450 A2s
10 ms sine pulse, no voltage reapplied 630
Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A2√s
Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V
On-state slope resistance rtTJ = 125 °C 12.0 mΩ
Threshold voltage VT(TO) 1.0 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IH
25TTS08, 25TTS12 Anode supply = 6 V,
resistive load, initial IT = 1 A
- 100
25TTS16 100 150
Maximum latching current ILAnode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
mAAnode supply = 6 V, resistive load, TJ = 25 °C 45
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Maximum required DC gate voltage
to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
µsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
Document Number: 94383 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 17-Sep-09 3
25TTS...SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A Vishay High Power Products
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm] copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Soldering temperature TSFor 10 s (1.6 mm from case) 240
Maximum thermal resistance,
junction to case RthJC DC operation 1.1
°C/W
Typical thermal resistance,
junction to ambient (PCB mount) RthJA (1) 40
Approximate weight 2g
0.07 oz.
Marking device Case style D2PAK (SMD-220)
25TTS08S
25TTS12S
25TTS16S
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94383
4Revision: 17-Sep-09
25TTS...SPbF High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 16 A
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
90
100
110
120
130
0 5 10 15 20
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-sta te Current (A)
25TTS.. Series
R (DC) = 1.1 °C/ W
thJC
80
90
100
110
120
130
0 5 10 15 20 25 30
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Period
25TTS. . Se r i e s
R (DC) = 1.1 °C/W
thJC
0
5
10
15
20
25
048121620
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
25TTS. . Se r i e s
T = 125°C
J
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
25TTS. . Se r i e s
T = 125°C
J
150
200
250
300
350
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pe a k Ha l f S
ine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
25TTS. . Se r i e s
At Any Rated Load Condition And With
Ra ted V Ap p lied Fo llo wing Surge .
RRM
100
150
200
250
300
350
400
0.01 0.1 1
Pe a k Ha lf Sine Wave On-state Current (A)
Pul se Tra in Du ra t io n ( s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduc tion Ma y Not Be Maintained.
Initia l T = 125°C
No Voltage Reapplied
Ra ted V Reap p lied
RRM
J
2 5 TTS. . Se r i e s
Document Number: 94383 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 17-Sep-09 5
25TTS...SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A Vishay High Power Products
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
Fig. 9 - Thermal Impedance ZthJC Characteristics
1
10
100
1000
012345
T = 2 5 ° C
J
Insta nta neo us On-st at e Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
2 5 TTS. . Se r i e s
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Squa re Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Si n g l e Pu l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
25TTS.. Se ries
thJC
Transient Thermal Imp ed anc e Z (°C/W)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = 2 5 ° C
T
J = 125 °C
b)Recommended load line for
Frequency Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
TJ = - 1 0 ° C
2 5 TTS. . Se r i e s
IGD
VGD
<= 30% rated di/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, t p = 1 ms
(2) PGM = 20 W, t p = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94383
6Revision: 17-Sep-09
25TTS...SPbF High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 16 A
ORDERING INFORMATION TABLE
1
- Current rating (25 = 25 A)
2
- Circuit configuration:
3
- Package:
4
T = Single thyristor
- Type of silicon:
5
- Voltage rating = Voltage code x 100 = V
RRM
T = TO-220AC
Standard recovery rectifier
6
- S = TO-220 D
2
PAK (SMD-220) version
7
-None = Tube
TRL = Tape and reel (left oriented)TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
8
-None = Standard production
PbF = Lead (Pb)-free
08 = 800 V
12 = 1200 V
16 = 1600 V
Device code
51324678
25 T T S 12 S TRL PbF
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
