S9979 - Hamamatsu Photonics K.K.

S9979

S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor

is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.

By operating this image sensor in MPP mode, the dark current can be exceedingly reduced. Moreover, use of the low-noise readout amplifier

enables low-light-level detection and long integration time, thus achieving a wide dynamic range.

S9979 has an effective pixel size of 48 × 48 µm and is available in active area of 73.728 (H) × 6.144 (V) mm.

Features

TDI (Time Delay Integration) operation

1536 (H) × 128 (V) pixel format

Pixel size: 48 × 48 µm

100 % fill factor

Wide dynamic range: 20000

Low dark signal: 2 ke-/pixel/s Typ. (MPP mode)

Low readout noise: 60 e-rms Typ.

MPP operation

Applications

Industrial inspection

Low-light-level detection

IMAGE SENSOR

CCD area image sensor

TDI operation / large active area CCD

PRELIMINARY DATA

Sep. 2005

■ Specification

Type No. Cooling Number of

total pixels

Number of

active pixels

Active area

[mm (H) × mm(V)]

S9979 Non-cooled 1536 × 128 1536 × 128 73.728 × 6.144

■ General ratings

Parameter Specification

CCD structure Full frame transfer or TDI

Fill factor 100 %

Number of active pixels 1536 (H) × 128 (V)

Pixel size 48 (H) × 48 (V) µm

CCD active area 73.728 (H) × 6.144 (V) mm

Vertical clock phase 2 phase

Horizontal clock phase 2 phase

Output circuit Two-stage MOSFET source follower with load resistance

Package 28-pin ceramic package

Window *1Quartz window (standard)

Temporarily attached window is available

*1: Temporary window type (ex. S9979N) and UV coat type (ex. S9979UV) are available upon request.

Temporary window is fixed by tape to protect the CCD chip and wire bonding.

What is TDI operation

In FFT-CCD, TDI operation performs continuous imaging of

a fast-moving object, by transferring the signals at the same

rate as the speed of the mo ving object. TDI operation allo ws

acquiring continuous, clear images with high S/N and no

frame breaks.

Since signals of all pixels in each row are accumulated,

sensitivity variations can be drastically improved compared

to two-dimensional operation.

SIGNAL TRANSFER

OBJECT MOVEMENT

CHARGE

CAPACITY

Time1 Time2 Time3 1 line

•

M line

● Signal integr ation by TDI operation

KMPDC0139EA

CCD area image sensor S9979

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Operating temperature Topr -30 -+30 °C

Storage temperature Ts t g -30 -+70 °C

OD voltage VOD -0.5 - +20 V

RD voltage VRD -0.5 -+18 V

ISV voltage VISV -0.5 - +18 V

IGV voltage VIGV -15 -+15 V

IGH voltage VIGH -15 - +15 V

SG voltage VSG -15 -+15 V

OG voltage VOG -15 - +15 V

RG voltage VRG -15 -+15 V

TG voltage VTG -15 - +15 V

Vertical clock voltage VP1AV, VP2AV

VP1BV, VP2BV -15 -+15 V

Horizontal clock voltage VP1AH, VP2AH

VP1BH, VP2BH -15 - +15 V

■ Operating conditions (MPP mode, Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Output transistor drain voltage VOD 12 15 - V

Reset drain voltage VRD 12 13 14 V

Output gate voltage VOG -0.5 2 5 V

Output transistor ground voltage VSSA - 0 - V

Substrate voltage VSSD -5 0 - V

Vertical input source VISV - VRD -

Vertical input gate VIGV -8 0 -Te s t p oin t

Horizontal input gate VIGH -8 0 -

High VP1AVH, VP2AVH

VP1BVH, VP2BVH 036

Vertical shift register

clock voltage Low VP1AVL, VP2AVL

VP1BVL, VP2BVL -9 -8 -7

High VP1AHH, VP2AHH

VP1BHH, VP2BHH 0 3 6

Horizontal shift register

clock voltage Low VP1AHL, VP2AHL

VP1BHL, VP2BHL -9 -8 -7

High VSGH 036

Summing gate voltage Low VSGL -9 -8 -7 V

High VRGH 0 3 6

Reset gate voltage Low VRGL -9 -8 -7 V

High VTGH 036

Transfer gate voltage Low VTGL -9 -8 -7 V

■ Electrical characteristics (Ta=25 °C)

Parameter Symbol Remark Min. Typ. Max. Unit

Signal output frequency fc - 2 4 MHz

Reset clock frequency frg - 2 4 MHz

Vertical shift register capacitance CP1AV, CP2AV

CP1BV, CP2BV - 15000 - pF

Horizontal shift register capacitance CP1AH, CP2AH

CP1BH, CP2BH -500 -pF

Summing gate capacitance CSG -15- pF

Reset gate capacitance CRG -10 -pF

Transfer gate capacitance CTG - 500 - pF

Transfer efficiency CTE *20.99995 0.99999 -

DC output level Vout *35811V

Output impedance Zo *3-500 -Ω

Power dissipation P *3, *4-60-mW

*2: Measured at half of the full well capacity. CTE is defined per pixel.

*3: VOD=15 V

*4: Power dissipation of the on-chip amplifier

CCD area image sensor S9979

200 400300 500 600 700

WAVELENGTH (nm)

800 900 100011001200

QUANTUM EFFICIENCY (%)

(Typ. Ta=25 ˚C)

UV COAT

■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Parameter Symbol Remark Min. Typ. Max. Unit

Saturation output voltage Vsat - Fw × Sv - V

Vertical 600 1200 -

Horizontal 600 1200 -Full well capacity

Summing

600 1200 -

ke-

CCD node sensitivity Sv *50.45 0.6 - µV/e-

Dark current (MPP mode) DS *6- 2 8 ke-/pixel/s

Readout noise Nr *7- 60 120 e-rms

Dynamic range DR *85000 20000 -

Photo response non-uniformity PRNU *9-±3±10%

Spectral response range λ-400 to 1100 -nm

White spots - - 0

Point

defects *10 Black spots - - 0

Cluster defects *11 --0

Blemish

Column defects

*12 --0

*5: VOD=15 V.

*6: Dark current doubles for every 5 to 7 °C.

*7: -40 °C, operating frequency is 2 MHz.

*8: Dynamic range = Full well capacity / Readout noise

*9: Measured at the half of the full well capacity

PRNU (%) = Noise / Signal × 100

Noise: Fixed pattern noise (peak to peak)

*10: White spots > 20 times of Max. dark signal (8 ke-/pixel/s).

Black spots

Pixels whose sensitivity is lower than one-half of the average pixel output (Measured with uniform light producing one-half of

the saturation charge)

*11: 2 to 9 contiguous defective pixels.

*12: 10 or more contiguous defective pixels.

■ Spectral response (without window)

KMPDB0244EB

CCD area image sensor S9979

......

234

125126127 128

S1531

S1532

S1533

S1534

S1535

S1536

......

1531

1532

1533

1534

1535

1536

ISV 15

IGV

P1BV

P2BV

P1AV

P2AV

SSA

P2AH P1AH P2BH P1BH

IGHSSD

S1, ... , S1536: ACTIVE AREA

78 9 11 12 13 14

■ Device structure

■ Pixel format ← Left Horizontal Direction → Right

Blank Optical

black Isolation Effective Isolation Optical

black Blank

0 0 0 1536 0 0 0

Top ← Vertical direction → Bottom

Isolation Effective Isolation

0 128 0

KMPDC0234EA

■ Timing chart (TDI operation)

P1AV, P1BV

P2AV, P2BV

P1AH, P1BH

P2AH, P2BH

ENLARGED VIEW

Tpwv

Tovr

Tpwr

P1AH, P1BH

P2AH, P2BH

S2 S3S1 S4 S5 S1535 S1536

Tpwh, Tpws

KMPDC0142EB

CCD area image sensor S9979

■ Timing chart (TDI operation, 2 × 2 pix el binning)

P1AV, P1BV

P2AV, P2BV

P1AH, P1BH

P2AH, P2BH

ENLARGED VIEW

Tpwv

Tovr

Tpwr

P1AH, P1BH

P2AH, P2BH

S1 + S2 S3 + S4 S1535 + S1536

Tpwh, Tpws

KMPDC0111EC

Parameter Symbol Remark Min. Typ. Max. Unit

Pulse width tpwv 30 60 - µs

P1AV, P1BV,

P2AV, P2BV, TG Rise and fall time tprv, tpfv *13, *14

200 - - ns

Pulse width tpwh 125 250 -ns

Rise and fall time tprh, tpfh 10 - - ns

P1AH, P1BH,

P2AH, P2BH Duty ratio

*14

-50 - %

Pulse width tpws 125 250 - ns

Rise and fall time tprs, tpfs 10 - - nsSG

Duty ratio - 50 - %

Pulse width tpwr 10 50 -ns

RG Rise and fall time tprr, tpfr 5 - - ns

TG-P1AH, P1BH Overlap time tovr 10 20 - µs

*13: TG terminal can be short-circuited to P2AV terminal.

*14: The clock pulses should be overlapped at 50 % of clock pulse amplitude.

CCD area image sensor S9979

87.0

28 27 16 15

PIN No. 1 2

13 14

2.54 0.46

33.02

15.0

15.24

0.25

2.5

1.3

0.5

QU ARTZ WINDO W

PHOTOSENSITIVE

SURFACE

INDEX MARK

TDI direction

KMPDA0203EB

■ Dimensional outline (unit: mm)

■ Pin connections

Pin No. Symbol Description Remark

1 RG Reset gate

2RD Reset drain

3 SSA Analog ground

4OS Output transistor source

5 OD Output transistor drain

6OG Output gate

7 SG Summing gate

8P2AH CCD horizontal register clock A-2

9 P1AH CCD horizontal register clock A-1

10 NC

11 SSD Digital ground

12 P2BH CCD horizontal register clock B-2 Same timing as P2AH

13 P1BH CCD horizontal register clock B-1 Same timing as P1AH

14 IGH Test point (Horizontal input gate)

15 ISV Test point (Vertical input source) Shorted to RD

16 to 22 NC

23 IGV Test point (Vertical input gate)

24 P1BV CCD vertical register clock B-1 Same timing as P1AV

25 P2BV CCD vertical register clock B-2 Same timing as P2AV

26 P1AV CCD vertical register clock A-1

27 P2AV CCD vertical register clock A-2

28 TG Transfer gate

■ Precautions for use (Electrostatic countermeasures)

● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with

an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

● Provide ground lines or ground connection with the work-floor, wor k-desk and work-bench to allow static electricity to dis-

charge.

● Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

■ Element cooling/heating temperature incline rate

When cooling the CCD by an exter nally attached cooler, set the cooler operation so that the temperature gradient (rate of

temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute.

CCD area image sensor S9979

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information described in this material is current as of March, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the

delivery specification sheet to check the latest information.

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept

absolutely no liability for any loss caused by natural disasters or improper product use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Cat. No. KMPD1091E04

Mar. 2011 DN 7