0912GN-300V 300 Watts - 50 Volts, 128uS, 10% Broad Band 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal prematch for optimal performance. This hermetically sealed transistor is designed for avionic applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 650 W 150 V -8 to +0 V Maximum Temperatures Storage Temperature (TSTG)-55 to +125C Operating Junction Temperature +250C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d Dr VSWR-T jc Characteristics Output Power Power Gain Drain Efficiency Droop Load Mismatch Tolerance Thermal Resistance Test Conditions Pout=300W, Freq=960, 1090, 1215 MHz Pout=300W, Freq=960, 1090, 1215 MHz Pout=300W, Freq=960, 1090, 1215 MHz Pout=300W, Freq=960, 1090, 1215 MHz Pout=300W, Freq=1215 MHz Pulse Width=128uS, Duty=10% Min 300 18 52 Typ Max 60 .8 3:1 .28 Units W dB % dB C/W Bias Condition: Vdd=+50V, Idq=60mA average current (Vgs= -2.0 ~ -4.5V ) with constant gate Bias FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage Export Classification: EAR 99 VgS = -8V, VD = 150V VgS = -8V, VD = 0V Vgs =-8V, ID = 14mA 14 6 150 Issue June 2013 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information mA mA V 0912GN-300V 300 Watts - 50 Volts, 128uS, 10% Broad Band 960 - 1215 MHz Typical Performance Data Freq(GHz) Pin (W) Pout (W) Id (A) RL (dB) Eff (%) Gp (dB) Droop (dB) .960 4 338 1.15 -7.5 60 19.3 .4 1.090 4 335 1.09 -8.2 63 19.2 .3 1.215 4 310 1.08 -17.5 58 18.9 .3 Model 0912GN300V Vdd = 50V, 128uS , 10% 450 26 400 24 350 22 250 20 200 150 Gain (dB) Pout (W) 300 18 100 16 50 0 1.5 2.5 3.5 4.5 .96GHz Pin (W) 1.09GHz 14 5.5 1.215GHz Efficiency (%) Model 0912GN300V Vdd = 50V, 128uS , 10% 80 70 60 50 40 30 20 10 0 1.5 2.5 3.5 Pin (W) 4.5 .96GHz 5.5 1.09GHz 1.215GHz For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 0912GN-300V 300 Watts - 50 Volts, 128uS, 10% Broad Band 960 - 1215 MHz Transistor Impedance Information Note: Z Source is looking into the input circuit; Z Load is looking into the output circuit. Impedance Data Freq (GHz) Zs Zl .960 2.15 - j0.85 2.40 + j0.75 1.090 2.10 + j0.55 2.35 + j1.40 1.215 2.15 + j0.17 1.95 + j2.20 Please contact our representative for the RF test circuit For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 0912GN-300V 300 Watts - 50 Volts, 128uS, 10% Broad Band 960 - 1215 MHz 55-KR PACKAGE DIMENSION Dimension A B C D E F G H I J K L M N Min (mil) 370 498 700 830 1030 101 151 385 130 003 135 105 085 065 Min (mm) 9.40 12.65 17.78 21.08 26.16 2.56 3.84 9.78 3.30 .076 3.43 2.67 2.16 1.65 Max (mil) 372 500 702 832 1032 102 152 387 132 004 137 107 86 66 Max (mm) 9.44 12.7 17.83 21.13 26.21 2.59 3.86 9.83 3.35 0.10 3.48 2.72 2.18 1.68 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 0912GN-300V 300 Watts - 50 Volts, 128uS, 10% Broad Band 960 - 1215 MHz The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other missioncritical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp. Revision History Revision Level / Date 0.1 / 20 June 2013 Para. Affected - Description Initial Preliminary Release For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information