VCE IC = = 2500 V 700 A IGBT Press pack 5SNA 0700D250003 * * * * * * * Doc. No. 5SYA1504-02 Apr.01 Low on-state voltage drop Integrated heat sink Short Circuit rated Highly rugged switching SOA Low forward voltage High Voltage, high current capability Designed for series connection Maximum Rated Values Parameter Collector-Emitter Voltage (Tj = 25C, unless specified otherwise) Symbol VCES Conditions VGE = 0 V, Ic = 10 mA 2500 V 700 A 1400 A 20 V SwSOA IC = 1400 A, VCEM = 2500 V, VCC = 0 V, VG E = 15 V, Tj =125 C SCSOA VCC = 1500 V, VCEM = 2500 V, tp = 10 s, VGE = 15 V, Tj = 125 C IF Ths = 40 C 700 A DC Collector Current IC Ths = 40 C Peak Collector Current IC M Pulse: tp=1ms, Ths = 40 C Gate Emitter Voltage IGBT Switching SOA IGBT Short Circuit SOA DC Forward Current Peak Forward Current Rating VGES IF M Pulse: tp = 1ms, Ths = 40 C ABB Semiconductors AG reserves the right to change specifications without notice. 1400 A 5SNA 0700D250003 IGBT Characteristic Values Parameter Collector-Emitter Saturation (Tj =25 C, unless other spec.) Symbol Conditions min. typ. max. Unit VCE(sat) IC = 700 A, VGE = 15 V Voltage Tj = 25 C 2.40 2.80 V Tj = 125 C 3.00 3.40 V Collector-Emitter Leakage Current ICES VCE = 2500 V, VGE = 0 V, Tj = 125 C Gate-Emitter leakage Current IGES VCE = 0 V, V GE = 20 V, Tj = 125 C Gate-Emitter Threshold Voltage VGEth Total Gate Charge QG Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Cres Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) tf IC = 120 mA, VCE = VGE nF 3 nF IC = 700 A, VCC = 1250 V, Rgon = 10 , 1.4 s Tj = 125 C, VGE = 15 V 1.0 s IC = 700 A, VCC = 1250 V, Rgoff = 10 , 1.9 s Tj = 125 C,VGE = 15 V 0.6 s 1.35 J 1.15 J Qrr Reverse Recovery Time trr Reverse Recovery Energy Erec IC = 700 A, Tj = 125 C, VCC = 1250 V, VGE = 15 V, inductive load (Tj = 25 C, unless other spec.) Symbol Reverse Recovery Charge V 10 VCE = 25 V, VGE = 0 V, f = 1MHz Rgoff = 10 Irrm 8.5 nF Eoff Reverse Recovery Current nA 100 Turn-off Switching Energy VF 500 C Rgon = 10 Forward Voltage 7.0 mA 6.2 Eon Parameter 5.0 IC = 700 A, VCE = 200 V, VGE = -15 to 15 V Turn-on Switching Energy Diode Characteristic Values 20 Conditions IF = 700 A min. typ. max. Tj = 25 C 2.00 2.40 Tj = 125 C 2.00 2.40 IF = 700 A, Rgon = 10 , VCC = 1250 V, VGE = 15 V IF = 700 A, Tj = 125 C, VCC = 1250 V, Rgon = 10 Unit V 350 A 390 C 3 s 265 mJ ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1504-02 Apr.01 2 of 4 5SNA 0700D250003 Thermal Characteristics Parameter (Tj =25 C, unless other spec.) Symbol Conditions min. typ. max. Unit IGBT Thermal Resistance Junction. to Case RthJW IGBT Water flow: 12 l/min 0.032 K/W Diode Thermal Resistance Junction to Case RthJW Diode 0.095 K/W Junction Temperature Tj 5 125 C Storage Temperature Ttstg/Tcop 5 125 C Mechanical Properties Parameter Dimensions Symbol L* W* H Conditions Typical , see outline drawing min. typ. max. Unit 183 * 96 * 51 mm Clearance Distance DC acc. IEC 664-1 and prEN50124-1:1995 25 mm Surface Creepage Distance DSC acc. IEC 664-1 and prEN50124-1:1995 39 mm Mounting Force FM Weight 18 50 1.4 kN kg ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1504-02 Apr.01 3 of 4 5SNA 0700D250003 Electrical configuration 13 51 Outline drawing 183 80 Gate Collector 96 Emitter ABB Semiconductors reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 Info@ch.abb.com www.abbsem.com Doc. No. 5SYA1504-02 Apr.01