ABB Semiconductors AG reserves the right to change specifications without notice.
VCE =2500 V
IC=700 AIGBT Press pack
5SNA 0700D250003
Doc. No. 5SYA1504-02 Apr.01
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Low on-state voltage drop
•
Integrated heat sink
•
Short Circuit rated
•
Highly rugged switching SOA
•
Low forward voltage
•
High Voltage, high current
capability
•
Designed for series connection
Maximum Rated Values (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Rating
Collector-Emitter Voltage VCES VGE = 0 V, Ic= 10 mA 2500 V
DC Collector Current ICThs = 40 °C 700 A
Peak Collector Current ICM Pulse: tp=1ms, Ths = 40 °C 1400 A
Gate Emitter Voltage VGES ± 20 V
IGBT Switching SOA SwSOA IC = 1400 A, VCEM = 2500 V, VCC = 0 V, VGE = ±15 V,
Tj =125 °C
IGBT Short Circuit SOA SCSOA VCC = 1500 V, V CEM = 2500 V, tp = 10 µs, VGE = ±15 V,
Tj = 125 °C
DC Forward Current IFThs = 40 °C 700 A
Peak Forward Current IFM Pulse: tp = 1ms, Ths = 40 °C 1400 A
5SNA 0700D250003
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1504-02 Apr.01 2 of 4
IGBT Characteristic Values (Tj =25 °C, unless other spec.)
Parameter Symbol Conditions min. typ. max. Unit
Tj = 25 °C 2.40 2.80 VCollector-Emitter Saturation
Voltage VCE(sat) IC = 700 A, VGE = 15 V Tj = 125 °C3.00 3.40 V
Collector-Emitter Leakage
Current ICES VCE = 2500 V, VGE = 0 V, Tj = 125 °C 20 mA
Gate-Emitter leakage Current IGES VCE = 0 V, VGE = ±20 V, Tj = 125 °C ±500 nA
Gate-Emitter Threshold Voltage VGEth IC = 120 mA, VCE = VGE 5.0 7.0 8.5 V
Total Gate Charge QGIC = 700 A, VCE = 200 V, VGE = -15 to 15 V 6.2 µC
Input Capacitance Ciss 100 nF
Output Capacitance Coss 10 nF
Reverse Transfer Capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1MHz
3nF
Turn-On Delay Time td(on) 1.4 µs
Rise Time tr
IC = 700 A, VCC = 1250 V, Rgon = 10 Ω,
Tj = 125 °C, VGE = ±15 V 1.0 µs
Turn-Off Delay Time td(off) 1.9 µs
Fall Time tf
IC = 700 A, VCC = 1250 V, Rgoff = 10 Ω,
Tj = 125 °C,VGE = ±15 V 0.6 µs
Turn-on Switching Energy Eon Rgon = 10 Ω1.35 J
Turn-off Switching Energy Eoff Rgoff = 10 Ω
IC = 700 A, Tj = 125 °C,
VCC = 1250 V, VGE = ±15 V,
inductive load 1.15 J
Diode Characteristic Values (Tj = 25 °C, unless other spec.)
Parameter Symbol Conditions min. typ. max. Unit
Tj = 25 °C 2.00 2.40
Forward Voltage VFIF = 700 A Tj = 125 °C 2.00 2.40 V
Reverse Recovery Current Irrm 350 A
Reverse Recovery Charge Qrr 390 µC
Reverse Recovery Time trr
IF = 700 A, Rgon = 10 Ω, VCC = 1250 V,
VGE = ±15 V 3µs
Reverse Recovery Energy Erec IF = 700 A, Tj = 125 °C, VCC = 1250 V,
Rgon = 10 Ω265 mJ
5SNA 0700D250003
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1504-02 Apr.01 3 of 4
Thermal Characteristics (Tj =25 °C, unless other spec.)
Parameter Symbol Conditions min. typ. max. Unit
IGBT Thermal Resistance
Junction. to Case RthJW IGBT 0.032 K/W
Diode Thermal Resistance
Junction to Case RthJW Diode
Water flow: 12 l/min
0.095 K/W
Junction Temperature Tj5 125 °C
Storage Temperature Ttstg/Tcop 5 125 °C
Mechanical Properties
Parameter Symbol Conditions min. typ. max. Unit
Dimensions L* W* H Typical , see outline drawing 183 * 96 * 51 mm
Clearance Distance DCacc. IEC 664-1 and prEN50124-1:1995 25 mm
Surface Creepage Distance DSC acc. IEC 664-1 and prEN50124-1:1995 39 mm
Mounting Force FM18 50 kN
Weight 1.4 kg
5SNA 0700D250003
Electrical configuration
Outline drawing
G
a
t
e
C
o
l
l
e
c
t
o
r
Emitter
80
9
6
1
8
3
5
1
1
3
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email Info@ch.abb.com
Internet www.abbsem.com
Doc. No. 5SYA1504-02 Apr.01
