HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 1 of 22 December 1999
HiRel
DISCRETE & MICROWAVE SEMICONDUCTORS
INTRODUCTION AND TYPE OVERVIEW
HiRel
Discrete and Microwave Semiconductors from
Infineon Technologies AG
December 1999
Product Marketing:
Infineon Technologies AG
High Frequency Products Marketing
Postal Address:
P.O.Box 80 09 49
D - 81609 Munich
Germany
Phone: (..89) 234 - 24480
Fax: (..89) 234 - 25568
e-mail: martin.wimmers@infineon.com
www-page: http://www.infineon.com/Discretes-RF
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 2 of 22 December 1999
0 TABLE OF CONTENTS
§ Tit el Component Types Page
Package Types
0. Table of Contents 2
1. Preliminar y r em ar k s 3
2. Int r oduc tion to
HiRel
and Space Q ualified Devices 3
2.1 General 3
2.2 Silicon Devic es 4
2.3 GaAs Dev ic es 4
3. Qualit y S pec ificat ions of
HiRel
Components 6
3.1 Over v iew on A v ailable
HiRel
Qualit y Lev els 6
3.2 Waf er Releas e 7
3.3
HiRel
Qualit y Lev els 8
Prof es s ional Quality Lev el 8
High Rel Qualit y Lev el 9
Space Q uality Level 10
ESA Space Qualit y Level 11
4. Select ion Guides of
HiRel
Discrete Microwave Semiconductors 12
4.1
HiRel
Silicon Diodes 12
General Purpose Silicon Schot tky Diodes BAS40, 70 12
Silicon PIN Diodes f or
HiRel
Applications BXY42, 43, 44 12
4.2
HiRel
Silicon Bipolar Transis tors 13
Conventional S ilic on B ipolar M ic r owav e Transis tors BFY 180, 280, 181, 183,
BFY 193, 196 13
SIEGET S ilic on B ipolar M ic r owav e Transis tors BFY 405, 420, 450 13
4.3
HiRel
GaAs M ic r owav e Dev ic es 14
General Purpose G aAs Microwave Ku-Band MESF ETs CFY25, 27 14
Low Noise GaAs Microwave K-Band HEMTs CFY 67 14
Power GaAs Microwave C-Band MESFETs CLY29, 32, 35, 38 15
Power GaAs Microwave X-Band MESFETs CLX27, 30, 32, 34 15
General P upr os e GaAs M M IC L- and S- B and CGY41 16
5. Package Outlines 17
5.1 Package Outlines of Diode Pack ages FP, HPAC140 17
P1, T 18
T1, T2 19
5.2 Package Outlines of Tr ans is tor Pac k ages Micro- X , Micr o- X 1, 20
MWP-25 20
MWP-35 Package 21
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 3 of 22 December 1999
1 PRELIMINARY REMARKS
This Paragraph gives an overview on the
HiRel
Small Signal Microwave Semiconductors available from
Siemens. Data s heets are av ailable from our WWW-Pages , together wit h m or e s pec ific inf or m ations:
- Discrete and RF-Semiconduct ors (Small Signal Semiconduct ors):
- HiRel Discrete and Microwave Semiconductors:
http://www.infineon.com/ Discretes-RF
For detailed descriptions, screening procedures and quality specifications as well as available Infineon
Technologies or ESA/SCC Detail Specifications please contact also our Marketing Division (contact address
as given on t he Cov er P age)
HiRel
component s are mainly provided f or highly prof essional applic ation like radio links, militar y applications ,
sea cables, naval, air and space-borne systems. T he philosophy concentrat es on devices of highest reliability
assembled in hermetically sealed packages. Screening procedures and quality assurance tests form a
dominant part of the procurement procedures. Ordered quantities are very often for a single project or
application only and thus com par atively low.
2 INTRODUCTION TO
HiRel
AND SPACE QUALIFIED DEVICES
2.1 GENERAL
Infineon Technologies Small Signal Semiconductors is an important supplier of discrete semiconductor
devices for the microwave community. The device families include Silicon and GaAs electronic devices. In
Silicon, microwave diodes (PIN and Schottky) and bipolar transistors are available. In GaAs, low noise
HEMTs and low noise as well as power MESFETs and corresponding monolithic microwave intregated
circuits (MMICs) are commercialised.
Contrary to the high volume markets where low cost plastic packages are used, the semiconductor dies are
assembled in hermetically sealed packages to give
HiRel
standard products for professional applications. It
should be st r es s ed, however, that also t hes e
HiRel
component s tak e full advant age of t he mass product ion of
wafers for the consumer and commercial markets. The wafers are selected from the best controlled volume
production and have to pass special additional acceptance tests. For dedicated customers also naked dies
are available f r om these spec ially appr ov ed and r es er v ed wafers.
Based on their proven reliability, the components described herein are best suited for use in high reliability
projects, e.g. for space applications. The following sections on Silicon and on GaAs devices report our
experience in
HiRel
parts and outline the range of components actually available in space quality (ESA/SCC
qualified) f rom t he Inf ineon Tec hnologies Small S ignal Semiconduc tors Group. Bot h wafer f abs and t he
HiRel
assembly line ar e ISO 9001 qualified.
The Infineon Technologies Semiconductor Group received the QS9000 Certificate in 12-1997, and wafer
product ion and
HiRel
assembly lines are approv ed ISO 9001. Num erous audit s have been per form ed by high
rel customers and organizations. The last audit by official authorities in this respect was performed by the
German and European space agencies, DARA and ESA, respectively, in t he frame of the BFY 193 / BFY 450
space evaluation program m e in M ay , 1995.
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 4 of 22 December 1999
2.2 SILICON DEVICES
Infineon Technologies has a long history in manufacturing high reliability discrete semiconductor devices.
Fundamental engineering work on a 1st generation of Si bipolar transistors was performed already in the
sixties and early seventies. Based on extensive and numerous reliability investigations the ESA/SCC
qualification status was granted to some Si component families, actually the PIN-diodes BXY 42, 43 and 44,
and the Schot t ky diodes BAS 70 and BAS 40 are ESA/SCC space qualified in their diff erent package variants.
The microwave bipolar junction transistors (BJT) of our 3rd generation headed by the BFY193 passed the
ambitious ESA evaluation and qualification programmes and received full ESA qualification (June 1996), this
family is completed by the larger type variant BFY196 (ESA/SCC qulification running). Also, the new
SIEGET microwave transistors, our 4th generation with it´s largest type variant, the BFY450, passed the
ESA/SCC qualif icat ion programme recently (June 1997).
Si micr owav e dev ic es , diodes as well as bipolar transis tors, have been us ed in num er ous s pac e pr ojec ts.
2.3 GaAs DEVICES
In compound semiconductor research Infineon Technologies has a background of more than 45 years. The
activ ities r ange from mater ial growth, tec hnology development thr ough dev ices to cir cuits inc luding m onolithic
microwave integrat ed circuit s (MMICs) and systems applicat ions of new components.
There are two main aspects driving these GaAs activities: The first is t o have this "high t echnology" available
inhouse for current and future enhanced systems. The second is to commercialise GaAs products as a
supplement to the Si semiconduct or programme. As a result, the company is engaged in the most important
application fields including especially low noise HEMTs and power FET devices for microwave applications,
discretes as well as MMICs, and has also ESA/SCC qualified GaAs devices in it´s delivery programme. In
1989 the GaAs Wafer Fab Line achieved a formal quality release to internal standards, followed later by
cert ificat ions ac c or ding CE CC 20 000 / CECC 50 000 cov er ing E N 29 001 ( ISO 9001) .
The history of the GaAs wafer production line started in 1980 with the fabrication of discrete low noise and
general purpose GaAs FETs for the open market. The world first commercially available GaAs MMICs were
released in 1982. A very important milestone was the invention of the Infineon Technologies specific,
propriet ary self-aligned gate process called G aAs DIOM technology. T he process exhibit s exceptional device
uniformity and reliability, it was released in 1984. First DIOM-MMICs (CGY40, CGY31) were marketed
according M IL883 quality alr eady in 1986.
Development of GaAs power devices at the Semiconductor Group started in 1987 after taking over
corresponding responsibilities from MSC, a former Infineon Technologies company. Already in 1992 the
production of corresponding high reliability Phased Array Radar MMICs (LNA, VGA, MPA, HPA) started. The
same technology is also used for large volume commercial power FETs in low cost plastic packages
introduced in 1993. Using similar chips in hermetically sealed packages gives high rel devices for the
professional market , proven through t he ESA/SCC evaluation programme successf ully completed in 1995.
Regarding low noise devices an important milestone was the introduction of a self aligned HEMT process.
GaAs LN-HEMT marketing started in 1989. A Space Evaluation and Qualification Programme to ESA / SCC
specifications was completed on the HEMT types CFY66 and CFY67 under DARA and ESA contracts in
1994, with the I nfineon T echnologies HE MTs becoming t he firs t ever space qualif ied HEMT s. F irst flight part s
have been delivered to the Artem is project, and the naked dies are chos en as the bas e line for t he LNA of the
ASAR / Envisat project.
The long and successfull history of DIOM Power FETs and MMICs at Infineon Technologies on commercial
devices and project work shall be explained in more detail. The large volume production of P-FETs and P-
MMICs for mobile communication (DECT, GSM, PCN) is based on surface mountable devices in low cost
plastic
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 5 of 22 December 1999
packages and has brought Infineon Technologies to becom e the larges t com mercial s upplier of G aAs dev ices
in Europe. Most of the devices are power MESFETs or MMICs with large gate width structures, and the
process m aturit y is bes t proved by these f igur es .
Similar P-FET dies in hermetically sealed packages give a power line-up for professional applications up to
5GHz (CLY29, 32, 35, 38). Based on the mass production of the dies and the huge amount of available
corresponding internal reliability data, an ESA/SCC Space Evaluation and Qualification Programme was
start ed under DARA and ESA contracts leading t o the ESA/SCC space qualif ication of t he CLY32 as t he pilot
type in November, 1997, the qualification of the larger Power-FETs is running. First flight parts have been
delivered t o the Spot / Veget ation and Met eos at Sec ond Generat ion pr ojec ts.
Power MMIC developments include activities for an S-band Radar project (high power amplifier HPA-MMI Cs),
the C-band COBRA PAR system (among others driver or medium power amplifier MPA-MMICs and HPA-
MMICs), and work on X-band SAR syst ems (HPA-MMICs). The MPA-MMIC die developed and delivered for
a C-band Phased Array Radar is also selected as the base line for the driver die of the ASAR / Envisat
project , the corresponding VG A is under discussion for this challenging instrument. The results of an X-band
HPA wit h P out=5.6W and PAE= 33% are exceptional and world-wide recognised.
Some of the recent developments were embedded in the FRG Government "Drei-Fünf Elektronik" consortial
programme. I n respect to power devices I nfineon T echnologies was also engaged in t he ESPRI T programme
"MANPOWER" and in the IEPG group. Regarding space applications Infineon Technologies was also
engaged as subcontractor in the ESA programme "Evaluation of New Microwave Power Transistors" with P-
FETs. The project work at Infineon Technologies is used as an vehicle to create devices for the commercial
and professional market . Developments of new X-Band Power-FET s under ESA contracts aim at the creat ion
of so- c alled high power pr em atched F E Ts not only for spac e, but als o for ot her pr ofessional applic ations.
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 6 of 22 December 1999
3 QUALITY SPECIFICATIONS OF
HIREL
COMP ONENT S
3.1 OVERVIEW ON AVAILABLE
HIREL
QUALITY LEVELS
The quality philosophy of our production for the commercial market is treated in detail in the paragraph on
general quality in our Small S ignal Semiconduc tors data books . T he quality as surance of our
HiRel
devices is
relying heavily on this basic quality system. In addition special measures are taken to assure the higher
quality lev els of our
HiRel
product s .
First of all, wafers are selected from the normal production runs and are exposed to a specific release
procedure. The semiconductor dies are then assembled in hermetically sealed microwave packages and
tested. These com ponents are av ailable in four well defined upgrading qualit y lev els , compar e als o Table 1 for
a direct c om par is on of thes e lev els :
For the Professional Quality Level the com ponents pas s basic m echanical, t hermal and electr ical test s and
inspect ions and are fully DC / RF t est ed. T his quality level gives t he same elec tric al perfor mance as t he other
levels, c or r es pondent devices m ay be us ed e.g. for engineering wor k .
The High Rel Quality Level provides extended test s and additionally a 100% Burn-I n (screening) The t esting
procedure secures full tracebility and is explicitely certified for each delivery lot by the corresponding
"Certific ate of Com plianc e" CoC. This lev el m ay be us ed in pr ofessional equipm ent.
The Space Quality Level provides further extended tests, partly a Pre Burn-In, a multiple 100% Burn-In
screening on serialized devices and a temperature characterisation. Final electrical measurements are given
on a read and record base. The test ing procedure is again explicitely certif ied for each deliver y lot by a CoC.
Lot Acceptance Tests to different levels will be performed, if ordered. This level will be used especially in
commercial spacecraft systems.
The ESA Space Quality Level follows the testing procedures specified in the ESA / SCC Generic
Specif ication 5010 and in the corresponding Det ail Specificat ions. They provide again further extended tests,
partly a Pre Bur n-In and m ultiple 100% Bur n-In on s erialized devic es including an individual drift evaluation, a
temperature characterisation and final electrical measurements. Full ESA specified data documentation is
provided including all measurements on a read and record base. The testing procedure is again explicitely
certified for each delivery lot by a CoC. Lot Acceptance Tests t o different levels will be perf ormed, if ordered.
This level will be used especially in spacecraf t systems supervised by ESA and corresponding agencies.
Quality
Level Wafer
Release Mech.
Insp. Read &
Record 100%
DC/RF1100%
Burn-In2Burn-In
Drift2Temp.
Charact. LAT Docum.
Profi Profi + - + - - - - -
High Rel High Rel + - + + - - - CoC
SpaceSpace++++
multiple + + + CoC &
Final Dat a
ESAESA++++
multiple + + + CoC &
Full Doc.
Notes: 1: RF for naked dies par tly on a sam ple bas e only .
2: Bur n- In may not be possible for naked dies
Table 1
HiRel
Small Signal Semiconductors Quality Levels: Test P rogrammes
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 7 of 22 December 1999
3.2 WAFER RELEASE
The wafers are processed and inspected including quality inspections according to the Process Identification
Document P.I.D.. Full documentation of all process steps and inspection is stored. Wafers meant for
HiRel
devices are then selected and exposed to a specific release procedure, including pilot run assembling and
endurance testing. The generic wafer process and release flow for
HiRel
devices is given in Fig.1. Specific
upgrades and limits are us ed for t he differ ent qualit y lev els .
§ 1 Wafer P rocess and Inspect ions according P.I.D.
1.1 W afer Pr oc es s and Inspections
1.2 Elec trical M eas ur em ents 100 %
1.3 Dicing and V is ual Inspection
Diced Wafer
§ 2 Review of Process Data
2.1 SPC Analysis
2.2 PCM A naly s is
2.3 Review of 100 % Electrical M eas ur em ents
2.4 Review of Ins pec tions
Initial Wafer Release
§ 3 Wafer Acceptan ce Test
3.1 SEM Inspection
3.2 Pilot Run Assembling and Tests
Die Visual I ns pec tion and Selection
Die Attach
Wire B onding
Int er nal V is ual Inspection
Bond Pull / Die S hear Test
Encapsulation
Therm al S hoc k
Fine Leak and Gross Leak S eal Test
Ext er nal V is ual Inspection
3.3 Pilot Run Electrical Char ac terisation
Serialisation
Elect r ic al M eas ur em ents at Room Temperature
Elect r ic al M eas ur em ents at High and Low Temperatures
3.4 Endur anc e Test ( Quality Lev el "High Rel" and higher)
High Temper ature Bias E ndur anc e Test
(min 1000 h at Tjmax or 168 h at Tjmax + 25 °C)
Elect r ic al M eas ur em ents af ter Endur anc e Test
Parameter Drift E v aluation
Bond Pull / Die S hear Test
3.5 Check P er iodic Reliability Monitor
Final Wafer Release
Fig.1 Generic Wafer Process and Release Flow for
HiRel
Small Signal Semiconductors
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 8 of 22 December 1999
3.3
HiRel
QUALITY LEVELS
The flow charts for production, inspections and testing of the four standard
HiRel
quality levels are given in
Fig.2-5. As can be seen, the quality levels provide successively higher degrees of testing, screening and
document ation, thus prov iding the increas ed r eliability as s ur anc e needed for t he differ ent applicat ions .
The sub- par agr aphs us e the same No. for quic k r eference.
Full t raceabilty of a delivery lot t o an assembly lot and the specific semiconduct or wafers used is secured for
the High Rel Q uality Level and the fur ther upgrades .
Diced Wafer Rel eased fo r P rofessional Quality Level
§ 1 Assembling
1.1 Die Selec tion
1.2 Die Mounting
1.3 W ir e B onding
1.4 I nternal Vis ual Inspection
1.5 Bond S trengt h Test ( S am ple)
1.6 Die Shear Test ( S am ple)
1.7 Encapsulation
1.8 High T em per ature Stabilisat ion B ak e
1.9 Ex ternal Vis ual Inspection
1.10 Review of Assembling
Release for Final Production Tests
§ 2 Final Production Tests
2.6 F ine Leak and Gross Leak S eal Test
2.8 F ull E lec trical M eas ur em ents at Room Temperature
2.9 Marking
Ext er nal V is ual Inspection
2.11 Review of Final Produc tion Tes ts
Delivery
Fig.2 Assembling and Testing Flow of Professional Quality Level
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 9 of 22 December 1999
Diced Wafer Rel eased fo r High Rel Quality Level
§ 1 Assembling
1.1 Die Selec tion
1.2 Die Mounting
1.3 W ir e B onding
1.4 I nternal Vis ual Inspection
1.5 Bond S trengt h Test ( S am ple)
1.6 Die Shear Test ( S am ple)
1.7 Encapsulation
1.8 High T em per ature Stabilisat ion B ak e
1.9 Ex ternal Vis ual Inspection
1.10 Review of Assembling
Release for Final Production Tests
§ 2 Final Production Tests
2.2 T her m al S hoc k
2.5 Par ticle I m pac t Noise Det ec tion Tes t PIND
2.6 F ine Leak and Gross Leak S eal Test
2.8 F ull E lec trical M eas ur em ents at Room Temperature
2.9 Marking
2.11 Review of Final Produc tion Tes ts
Release for Burn-I n
§ 3 Burn - In and E lectri cal Measurement s
3.1 High T em per ature Rever s e B ias or P ower B ur n- In
3.6 F ull E lec trical M eas ur em ents at Room Temperature
3.7 F ine Leak and Gross Leak S eal Test
3.8 Ex ternal Vis ual Inspection
3.9 Review of Burn-In and Measurements / Check for Lot Accept ance
3.12 Cert ificat e of Compliance
Delivery
Fig.3 Assembling and Testing Flow of High Rel Quality Level
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 10 of 22 December 1999
Diced Wafer Rel eased fo r S pace Qual ity L evel
§ 1 Assembling
1.1 Die Selec tion
1.2 Die Mounting
1.3 W ir e B onding
1.4 I nternal Vis ual Inspection
1.5 Bond S trengt h Test ( S am ple)
1.6 Die Shear Test ( S am ple)
1.7 Encapsulation
1.8 High T em per ature Stabilisat ion B ak e
1.9 Ex ternal Vis ual Inspection
1.10 Review of Assembling
Release for Final Production Tests
§ 2 Final Production Tests
2.2 T her m al S hoc k
2.3 Const ant Acceleration (for large components only)
2.4 Vibr ation (f or lar ge c om ponents only)
2.5 Par ticle I m pac t Noise Det ec tion Tes t PIND
2.6 F ine Leak and Gross Leak S eal Test
2.7 Elec trical M eas ur em ents and Pr e B ur n- In (if s pec ified)
2.8 F ull E lec trical M eas ur em ents at Room Temperature
2.9 Mar k ing, Serialis ation
2.11 Review of Final Produc tion Tes ts
Release for Burn-I n
§ 3 Burn - In and E lectri cal Measurement s
3.1 High T em per ature Rever s e B ias
3.2 Power B ur n- In 1 and Param eter Drift / PDA E v aluation
3.4 Elec trical M eas ur em ents at High and Low Temperatures
3.5 Radiographic Inspection (if s pec ified)
3.6 F ull E lec trical M eas ur em ents at Room Temperature
3.7 F ine Leak and Gross Leak S eal Test
3.8 Ex ternal Vis ual Inspection
3.9 Review of Burn-In and Measurements / Check for Lot Accept ance
3.10 Perform Lot Acc eptance T es ts (if ordered)
3.11 Prepar e Data Pack age ( Final Electrical M eas ur em ents Results)
3.12 Cert ificat e of Compliance
Delivery
Fig.4 Assembling and Testing Flow of Space Qu alit y Level
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 11 of 22 December 1999
Diced Wafer Rel eased fo r E S A S pace Qual ity L evel
§ 1 Assembling
1.1 Die Selec tion
1.2 Die Mounting
1.3 W ir e B onding
1.4 I nternal Vis ual Inspection / Cus tomer Inspection
1.5 Bond S trengt h Test ( S am ple)
1.6 Die Shear Test ( S am ple)
1.7 Encapsulation
1.8 High T em per ature Stabilisat ion B ak e
1.9 Ex ternal Vis ual Inspection
1.10 Review of Assembling
Release for Final Production Tests
§ 2 Final Production Tests
2.1 Elec trical M eas ur em ents G o/Nogo
2.2 T her m al S hoc k
2.3 Const ant Acceleration (for large components only)
2.4 Vibr ation (f or lar ge c om ponents only)
2.5 Par ticle I m pac t Noise Det ec tion Tes t PIND
2.6 F ine Leak and Gross Leak S eal Test
2.7 Elec trical M eas ur em ents and Pr e B ur n- In (if s pec ified)
2.8 F ull E lec trical M eas ur em ents at Room Temperature
2.9 Mar k ing, Serialis ation
2.10 Dimension Chec k
2.11 Review of Final Produc tion Tes ts
Release for Burn-I n
§ 3 Burn - In and E lectri cal Measurement s
3.1 High T em per ature Rever s e B ias and P ar am eter Drift / PDA E v aluation
3.2 Power B ur n- In 1 and Param eter Drift / PDA E v aluation
3.3 Power B ur n- In 2 and Param eter Drift / PDA E v aluation
3.4 Elec trical M eas ur em ents at High and Low Temperatures
3.5 Radiographic Inspection (if s pec ified)
3.6 F ull E lec trical M eas ur em ents at Room Temperature
3.7 F ine Leak and Gross Leak S eal Test
3.8 Ex ternal Vis ual Inspection
3.9 Review of Burn-In and Measurements / Check for Lot Accept ance
3.10 Perform Lot Acc eptance T es ts (if ordered)
3.11 Prepare Full ESA Dat a Package
3.12 Cert ificat e of Compliance
Delivery
Fig.5 Assembling and Testing Flow of ESA Space Qualit y Level
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 12 of 22 December 1999
4 SELECTION GUIDES OF
HiRel
DISCRETE MI CROWAVE SEMI CO NDUCTORS
The Selection Guide provides main maximum rat ings and electr ical key param et er s ( t ypical data).
4.1
HiRel
Silicon Diodes
General P ur pos e S ilic on S c hottk y Diodes ( Tj,max = 150° C)
Max imum Ra t in gs Char a cter is tics ( typ ic al d ata) ESA/SCC
Component VRIFVBR VFRFCDPackage Detail Spec. -
Type - (1mA) (10/15m A) (0V) Type Type Variant
Variant V mA V V ΩpF No.
BAS40-T1 40 120 > 40
(@-10µA) 0,330 9,0 3,0 T1 5512/020-03
BAS70-T1
BAS70B-HP
(bridge quad)
70 70 > 70
(@-2µA) 0,380 30 1,4 T1
HPAC14
0
5512/020-01
5512/020-02
The BAS70 is ESA/SCC s pace qualified with all type var iant s ,
the space qualification exer cise of t he BAS40 is running (qualificat ion expected 2000) .
Silicon PIN Diodes (Tj,max = 175° C)
Max imum Ra t in gs Charac ter is tics ( typic a l da ta) ESA/SCC
Comp. VRPtot VBR RFCTτPackage Detail Spec. -
Type -
Variant (10mA) (-50V) (I
f/r
=+10/
-6mA) Type Type Variant
No.
VmW V ΩpF ns
BXY42-T1
BXY42-T 50 350
600 > 50
(@-10µA) 1,0 0,22
(20V) 50 T1
T5513/017-01
5513/017-02
BXY43-T
BXY43-T1
BXY43-P1
BXY43-FP
(single diode)
BXY43P-FP
(mat c hed pair)
150 500 > 150
(@-0.1µA) 0,9 0,30
0,30
0,50
0,60
0,60
650 T
T1
P1
FP
FP
5513/030-01
5513/030-02
5513/030-03
tbd.
5513/030-04
BXY44-T
BXY44-T1
BXY44-T2
BXY44-FP
(single diode)
BXY44P-FP
(mat c hed pair)
200 500 > 200
(@-0.1µA) 3,0
3,0
3,0
3.8
3.8
0,20
0,20
0,20
0,50
0,50
800 T
T1
T2
FP
FP
5513/030-05
5513/030-06
5513/030-07
tbd.
5513/030-08
The BXY42, BXY43 and BXY44 ar e ESA/ SCC s pace qualified wit h m os t type var iant s .
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 13 of 22 December 1999
4.2
HiRel
SILICON BIPOLAR TRANSISTORS
Conventional S ilic on B ipolar M ic r owav e Transis tors ( Tj,max = 200° C)
Max imum Ra t in gs Char a c t e rist ic s ( typ ic al d ata) ESA/SCC
Comp. VCE0 ICPtot RthJS fTNF Gma/ms Pout Package Detail Spec. -
Type max (500MHz,
5V) (2GHz,
5V) (2GHz,
5V) (2GHz,
5V) Type Type Variant
No.
V mA mW K/W GHz dB dB dBm
BFY180 8 4 30 805 6,5 2,6 13,5 - Micro-X1 5611/006-01
BFY280 8 10 80 450 7,2 2,2 14,0 - Micro-X1 5611/006-02
BFY181 12 20 175 360 7,5 2,2 14,5 - Micro-X1 5611/006-03
BFY182 12 35 250 255 7,5 2,4 14,5 - Micro-X1 5611/006-04
BFY183 12 65 450 225 7,5 2,3 14,0 14,5 Micro-X1 5611/006-05
BFY193 12 80 580 165 7,5 2,3 13,5 17,5 Micro-X1 5611/006-06
BFY196 12 100 700 135 6,5 3,0 11,0 19,5 Micro-X1 5611/006-07
The BFY 193 fam ily is ESA/SCC space qualif ied with all ty pe va r iant s ex cept t he BFY196, whos e exer c ise is r unning
(qualification expect ed 2000) .
SIEGET S ilic on B ipolar M ic r owav e Transis tors ( Tj,max = 175° C)
Max imum Ra t in gs Char a c t e rist ic s ( typ ic al d ata) ESA/SCC
Comp. VCE0 ICPtot RthJS fTNF Gma/ms Pout Package Detail Spec. -
Type max (2GHz,
3V) (1,8GHz,
2V) (1,8GHz,
2V) (1,8GHz,
2V) Type Type Variant
No.
V mA mW K/W GHz dB dB dBm
BFY405 4,5 12 55 545 22 1,15 23 5 Micro-X 5611/008-01
BFY420 4,5 35 160 285 22 1,10 21 12 Micro-X 5611/008-02
BFY450 4,5 100 450 145 22
(@1GHz) 1,25 16 19
(@3V) Micro-X 5611/008-03
The BFY 450 fam ily is ESA/ SCC s pace qualified wit h all t y pe va r iant s .
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4.3
HiRel
GaAs MICROWAVE DEVICES
Low Noise / G eneral Purpose G aAs Microwave C/Ku-Band MESFET s (Tj,max = 175° C)
Max imum Ra t in gs Char a cter is tics ( typ ic al d ata) ESA/SCC
Component VDS VDG IDPtot RthJS NF GaP1dB Package Detail Spec. -
Type - max (12 GHz) (12 GHz) (12 GHz) Type Type Variant
Variant V V mA mW K/W GHz dB dBm No.
CFY25-23 5 7 80 250 410 2,3 8,7 - Micro-X 5613/008-04
CFY25-20 2,0 9,0 - 5613/008-02
CFY25-P - - 15 5613/008-01
CFY25-23P 2,3 8,7 15 5613/008-05
CFY25-20P 2,0 9,0 15 5613/008-03
CFY27-38 9 11 420 900 150 3.5 8.0 - Micro-X 5613/008-06
(tbc.)
CFY27-P - - 26 5613/008-07
(tbc.)
The CFY25 space qualification exercise is running (qualificat ion expect ed 2000) , . Det ail Spec. No. t bc.
The CFY27 is a component under development , per form ance t o be conf ir m ed.
Super Low Noise GaAs Microwave X/K-Band HEMT s (Tj,max = 150°C)
Max imum Ra t in gs Char ac ter is tics ( typ ica l da ta) ESA/SCC
Component VDS VDG IDPtot RthJS NF GaPout Package Det ail Spec. -
Type - max (12 GHz) (12 GHz) (12 GHz) Type Type Variant
Variant V V mA mW K/W GHz dB dBm No.
CFY67-10 3,5 4,5 60 200 515 0,9 11,0 - Micro-X 5613/004-02
CFY67-10P 0,9 11,0 11,0 5613/004-04
CFY67-08 0,7 11,5 - 5613/004-01
CFY67-08P 0,7 11,5 11,0 5613/004-03
CFY67-06 0,5 12,5 - 5613/004-05
(tbc.)
The CFY67 are ESA/ SCC spac e qualif ied with mo st ty pe variants.
HiRel
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Introduction and Type Overview
Inf ineon Technologies A G 15 of 22 December 1999
Power GaAs Microwave C-Band MESFET s (Tj,max = 175°C)
Max imum Ra t in gs Char a cter is tics ( typ ic al d ata) ESA/SCC
Component VDS VDG IDPtot RthJS Glp Pout / P-1dB PAE Pa c ka g e Detail Sp e c. -
Type - (max) (2,3 GHz) (2,3 GHz) (2,3 GHz) Type Type Variant
Variant V V mA W K/W dB dBm % No. (t bc. )
CLY29 - 00
CLY29 - 05
CLY29 - 10
14 16 700 3,55 32
(38) 15
15,2
15,2
28,8
29,3
30
50
52
55
MWP-25 5614/006-06
5614/006-05
5614/006-04
CLY32 - 00
CLY32 - 05
CLY32 - 10
14 16 1400 6.75 16
(20) 12
12,5
12,5
31,8
32,3
33
47
50
53
MWP-25 5614/006-03
5614/006-02
5614/006-01
CLY35 - 00
CLY35 - 05
CLY35 - 10
14 16 2800 18 6,8
(7,5) 11,0
11,2
11,2
34,8
35,3
35,8
47
50
53
MWP-35 5614/008-06
5614/008-05
5614/008-04
CLY38 - 00
CLY38 - 05
CLY38 - 10
14 16 5600 30 3,8
(4,5) 11,0
11,2
11,2
37,8
38,3
38,8
47
50
53
MWP-35 5614/008-03
5614/008-02
5614/008-01
The CLY32 is ESA/SCC s pace qualified as t he pilot type, t he CLY29, CLY35 and CLY38 qualific at ion ex er c ise is r unning
(qualification expect ed 2000) .
Power GaAs Microwave X-Band MESFET s (Tj,max = 175°C)
Max imum Ra t in gs Char a cter is tics ( typ ic al d ata) ESA/SCC
Component VDS VDG IDPtot RthJS Glp Pout / P-1dB PAE Pa c ka g e Detail Sp e c. -
Type - (max) (2,3 GHz) (2,3 GHz) (2,3 GHz) Type Type Variant
Variant V V mA W K/W dB dBm % No. (t bc. )
CLX27 - 00
CLX27 - 05
CLX27 - 10
11 13 420 3.38 35
(40) 18,5
19
19
26,5
27,3
27,8
50
53
55
MWP-25 5614/007-06
5614/007-05
5614/007-04
CLX30 - 00
CLX30 - 05
CLX30 - 10
11 13 840 5.4 20
(25) 17,5
18
18
29,5
30,3
30,8
48
52
54
MWP-25 5614/007-03
5614/007-02
5614/007-01
CLX32 - 00
CLX32 - 05
CLX32 - 10
11 13 1400 5.4 20
(25) 16
16,5
16,5
31,5
32,3
32,8
48
52
54
MWP-25
(tbc.)
CLX34 - 00
CLX34 - 05
CLX34 - 10
11 13 2100 6.75 16
(20) 14,5
15
15
33,2
34
34,5
47
51
53
MWP-25
(tbc.)
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 16 of 22 December 1999
The CLX27 and CLX30 space qualification exercises are r unning (qualificat ion expected 2000) .
The CLX32 and CLX34 are component s under developm ent , per form ance t o be conf irm ed.
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 17 of 22 December 1999
General Purpose MMI C in MESF ET Technologie (Tj,max = 175°C)
Max imum Ra t in gs Char a cter is tics ( typ ic al d ata) ESA/SCC
Component VDVGIDPtot RthChS GP
-1dB IP3 Package Detail Spec. -
Type - (max) (1.8
GHz) (0.2 – 1.8 GHz) (0.8 GHz) Type Type Variant
Variant V V mA mW K/W dB dBm DBm No. (tbc.)
CGY41 5.5 -4...0 60 440 155 9.5 18 32 Micro-X tbc
There is actually no space qualification planned for t he CGY41 but I nfineon is open to discuss a qualification.
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 18 of 22 December 1999
5 PACKAGE OUTLINES
5.1 PACKAGE OUTLINES OF DIODE PACKAGES
5.1.1 FP PACKAGE
Symbol Millimetre
min max
B 3,10 3,55
B1 3,00 3,30
D 1,30 1,70
D1 0,55 0,65
d 0,10 0,15
d1 0,25 0,40
F 2,40 2,60
L5,50- 1.1 1.1’
1.2 1.2’
F
d1
D1
d
LL
B
B1
2
D
Y1
Y2
X1
Overview
Side View
Top View
5.1.2 HPAC140 PACKAGE
Symbol Millimetre
min max
A3,33,7
B1,92,1
C0,40,7
D5,5-
E - 1,75
F 0,07 0,15
Cathode
C
BA
D
E
F
D
1
2
3
4
z
x
z
y
Overview
Top View/
Side View
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 19 of 22 December 1999
5.1.3 P1 PACKAGE
Symbol Millimetre
min max
∅A2,02,2
∅B3,03,2
C 1,45 1,7
D0,40,6
Cathode
D
C
A
B
X1
Y1 Y2
12
Overview
Side View/
Top View
5.1.4 T PACKAGE
Symbol Millimetre
min max
A 1,30 1,45
B 1,15 1,35
C - 0,40
B
C
X1
Y1 Y2
A
12
Overview
Side View/
Top View
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 20 of 22 December 1999
5.1.5 T1 PACKAGE
Symbol Millimetre
min max
A 1,30 1,45
B 1,15 1,35
C - 0,40
D 0,10 0,50
E - 0,30
F 0,06 0,10
G5,50-
H 0,40 0,60
B
C
Y1 Y2
X1
G
D
H
A
E
F
G
12
Overview
Side View /
Front View
5.1.6 T2 PACKAGE
Symbol Millimetre
min max
∅A 1,30 1,45
∅B2,02,2
C 0,60 1,25
D 0,08 0,20
Y2 Y1
X1
B
A
D
C
12
Overview
Side View/
Top View
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 21 of 22 December 1999
5.2 PACKAGE OUTLINES OF TRANSISTO R PACKAGES
5.2.1 MICRO-X PACKAGE, MICRO-X1 PACKAGE
12
34
Overview
Top View
Side View
5.2.2 MWP-25 PACKAGE
Overview
Top View
Side View
HiRel
Discrete & Microwave Semiconductors
Introduction and Type Overview
Inf ineon Technologies A G 22 of 22 December 1999
5.2.3 MWP-35 PACKAGE
Overview
Top View
Side View
