IRF 440,441 D86ER2,R1 AQ ReMOS [FET This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features e Polysilicon gate Improved stability and reliability FIELD EFFECT POWER TRANSISTOR 8 AMPERES 500, 450 VOLTS RpS(ON) = 0.85 N-CHANNEL $s CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21.47) kDa. a 0858 at +c asaya 1,050(26.68) T r .358(9.09) MAX ope SEATING PLANE L mem .426(10.82) MIN. @ No secondary breakdown Exceilent ruggedness Mak} gers. Ultra-fast switching Independent of temperature Voltage controlled High transconductance CAST TEMP. = e Low input capacitance Reduced drive requirement Szxson J | 18iageee e Excellent thermal stability Ease of paralleling ORAIN [- 9:225(5.72) DRAIN 9.162{4.09) DIA. 0.205(5.21) (CASE) 0.15(3.84) 2 HOLES 0.440(11.16) 0.420(10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF440/D86ER2 IRF441/D86ER1 UNITS Drain-Source Voltage Voss 500 450 Volts Drain-Gate Voltage, Rag = 1M VoaGrR 500 450 Volts Continuous Drain Current @ Tc = 25C Ip 8 8 A @ Tc = 100C 5 5 A Pulsed Drain Current lom 32 32 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 w/C Operating and Storage Junction Temperature Range Ty, TstG ~55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rasc 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Resa 30 30 C/W Maximum Lead Temperature for Soldering . Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 165electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX UNIT off characteristics Drain-Source Breakdown Voltage IRF440/D86ER2 | BVpss 500 _ _ Voits (Vag = OV, Ip = 250 wA) IRF441/D86ER1 450 _ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Veg = OV, To = 25C) _ _ 250 uA (Vps = Max Rating, 0.8, Vgg = OV, To = 125C) _ _ 1000 S Leak OAVoe DOV} age Current less _ _ +100 nA on characteristics Gate Threshold Voltage To = 25C | Vestn) 2.0 _ 4.0 Volts (Vos = Vas: Ip = 250 pA) On-State Drain Current | 8 _ _ A (Vag = 10V, Vpg = 10V): D(ON) Static Drain-Source On-State Resistance (Vgs = 10V, Ip = 4A) RDS(ON) _ 0.75 0.85 Ohms Forward Transconductance (Vpg = 10V, Ip = 4A) Ofs 2.8 3.5 mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 1400 1600 pF Output Capacitance Vos = 25V Coss _ 190 350 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 28 150 pF switching characteristics Turn-on Delay Time Vps = 225V ta(on) _ 20 _ ns Rise Time Ip = 4A, Vag = 16V tr _ 20 _ ns Turn-off Delay Time RGeEn = 500, Res = 12.50 td (off) _ 60 _ ns Fall Time (Res (EQuiv.) = 100) tt _ 30 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 8 A Pulsed Source Current Ism _ _ 32 A Diode Forward Voltage _ (To = 25C, V@g = OV, Is = 8A) Vsp 0.9 2.0 Volts Reverse Recovery Time ter 520 _ ns (Ig = 8A, dlg/dt = 100A/usec, Tc = 125C) Qrr _ 6.4 uC *Pulse Test: Pulse width < 300 us, duty cycle < 2% 100 80 60 40 y oa OOS Nn 7 OPERATION IN THIS AREA MAY BE LIMITED BY Rogion) Ip. DRAIN CURRENT (AMPERES) So 99> > awe SINGLE PULSE T.= 25C 2 nN iF 440/D86ER2 6 810 20 40 6080100 200 Vog- DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA g 2 4 400 600 1000 166 2.4 CONDITIONS: Rosion) CONDITIONS: Ip = 4.04, Veg = 10V V@s(TH) CONDITIONS: Ip = 250uA, Ving = Vag 2.2 2.0 1.8 1.6 Rosion) 14 1.2 1.0 0.8 0.6 Rosion; AND Veseru) NORMALIZED 0.4 0,2 0 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion, AND Vagirn VS. TEMP. ~40 120