1
FMV24N25G FUJI POWER MOSFET
Super FAP-G series N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
TO-220F(SLS)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specied)
Description Symbol Characteristics Unit Remarks
Drain-Source Voltage V
DS
250 V
V
DSX
220 V V
GS
= -30V
Continuous Drain Current I
D
±24 A
Pulsed Drain Current I
DP
±96 A
Gate-Source Voltage V
GS
±30 V
Repetitive and Non-Repetitive Maximum AvalancheCurrent I
AR
24 A Note*1
Non-Repetitive Maximum Avalanche Energy E
AS
192 mJ Note*2
Maximum Drain-Source dV/dt dVds/dt 20 kV/µs VDS=≤200V
Peak Diode Recovery dV/dt dV/dt 5 kV/µs Note*3
Maximum Power Dissipation P
D
2.16 W Ta=25°C
65 Tc=25°C
Operating and Storage Temperature range T
ch
150 °C
T
stg
-55 to +150 °C
Isolation V
ISO
2KVrms t=60sec, f=60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specied) Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BV
DSS
I
D
=250µA, V
GS
=0V 250 - - V
Gate Threshold Voltage V
GS
(th) I
D
=250µA, V
DS
=V
GS
3.0 - 5.0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=250V, V
GS
=0V T
ch
=25°C - - 25 µA
V
DS
=200V, V
GS
=0V T
ch
=125°C - - 250
Gate-Source Leakage Current I
GSS
V
GS
=±30V, V
DS
=0V - 10 100 nA
Drain-Source On-State Resistance R
DS
(on) I
D
=12A, V
GS
=10V - 0.11 0.13 Ω
Forward Transconductance g
fs
I
D
=12A, V
DS
=25V 8 16 - S
Input Capacitance Ciss VDS=75V
VGS=0V
f=1MHz
- 1150 1725
pFOutput Capacitance Coss - 200 300
Reverse Transfer Capacitance Crss - 13 19.5
Turn-On Time td(on) Vcc =72V
V
GS
=10V
I
D
=12A
R
G
=10Ω
- 27 40.5
ns
tr - 22 33
Turn-Off Time td(off) - 35 52.5
tf - 14 21
Total Gate Charge Q
G
V
cc
=72V
I
D
=24A
V
GS
=10V
- 36 54
nCGate-Source Charge Q
GS
- 14.5 21.8
Gate-Drain Charge Q
GD
- 11.5 17.3
Avalanche Capability I
AV
L=560uH, T
ch
=25°C 24 - - A
Diode Forward On-Voltage V
SD
I
F
=24A, V
GS
=0V, T
ch
=25°C - 1.0 1.5 V
Reverse Recovery Time trr I
F
=24A, V
GS
=0V
-di/dt=100A/µs, Tch=25°C
- 0.23 - µS
Reverse Recovery Charge Qrr - 2.5 - µC
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=A, L=560uH, Vcc=48V, RG=50Ω,
EAS limited by maximum channel temperature and avalanche current.
Note *3 : IF≤-ID, -di/dt=50A/µs, Vcc≤BVDSS, Tch≤150°C.
Thermal Characteristics
Description Symbol min. typ. max. Unit
Channel to Case Rth (ch-c) 1.923 °C/W
Channel to Ambient Rth (ch-a) 58.0 °C/W
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2
FMV24N25G
3
FUJI POWER MOSFET
http://www.fujisemi.com
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
AllowablePowerDissipation
PD=f(Tc)
PD [W]
Tc [˚C]
0 2 4 6 8 10
0
10
20
30
40
50
8.0V
7.5V
20V
7.0V
10V
6.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25˚C
VGS=6.0V
0 1 2 3 4 5 6 7 8 9 10
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C
ID [A]
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
RDS(on) [ Ω]
Tch [˚C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.0A, VGS=10V
10 20 30 40
0.10
0.15
0.20
0.25
0.30
7.5V
8.0V
RDS(on) [ Ω]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25˚C
10V
20V
7.0V
6.5V
VGS=6.0V
0.1 1 10
0.1
1
10
gfs[S]
Typical Transconductance
gfs=f(ID):80 µs pulse test, VDS=25V, Tch=25˚C
2
3
FUJI POWER MOSFET
FMV24N25G
http://www.fujisemi.com
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS, ID=250µA
VGS(th) [V]
Tch [˚C]
0 10 20 30 40 50
0
2
4
6
8
10
12
14
Vcc=72V
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=24.0A, Tch=25˚C
VGS [V]
10-1 100101102
100
101
102
103
104
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µspulsetest, Tch=25˚C
0 25 50 75 100 125 150
0
100
200
300
400
500
600
IAS=24.0A
IAS=14.4A
IAS=9.6A
EAV [mJ]
starting Tch [˚C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(startingTch):Vcc=48V, I(AV)<=24.0A
10-1 100101
100
101
102
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
4
FMV24N25G
5
FUJI POWER MOSFET
http://www.fujisemi.com
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulse width
IAV=f(tAV):startingTch=25˚C,Vcc=48V
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [˚C/W]
t [sec]
Avalanche CurrentIAV [A]
4
5
FUJI POWER MOSFET
FMV24N25G
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
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may arise from the use of the applications described herein.
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