MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54528P 7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54528P is seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW) INPUTS FEATURES High breakdown voltage (BVCEO 40V) High-current driving (Ic(max) = 150mA) With clamping diodes Driving available with PMOS IC output of 8-18V Wide input voltage range (VI = -40 to +40V) Wide operating temperature range (Ta = -20 to +75C) IN1 1 16 O1 IN2 2 15 O2 IN3 3 14 O3 IN4 4 13 O4 IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 9 COM COMMON 8 OUTPUTS Outline 16P4 CIRCUIT SCHEMATIC COM OUTPUT APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces 20k INPUT 20k 2k GND The seven circuits share the COM and GND. FUNCTION The M54528P have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 150mA maximum. Collector-emitter supply voltage is 40V maximum. ABSOLUTE MAXIMUM RATINGS Symbol Collector-emitter voltage Collector current VI IF Input voltage VR Pd (Unless otherwise noted, Ta = -20 ~ +75 C) Parameter VCEO IC The diodes shown by broken line are parasite diodes and must not be used. Unit : Conditions Output, H Current per circuit output, L Clamping diode forward current Clamping diode reverse voltage Topr Power dissipation Operating temperature Tstg Storage temperature Ta = 25C, when mounted on board Ratings -0.5 ~ +40 Unit V 150 mA -40 ~ +40 150 V mA 40 1.47 V W -20 ~ +75 -55 ~ +125 C C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54528P 7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = -20 ~ +75C) Limits Parameter VO Output voltage IC Collector current Percent duty cycle less per channel than 40% VIH "H" input voltage "L" input voltage VIL ELECTRICAL CHARACTERISTICS Unit min 0 typ -- max 0 -- 150 7 -- 35 V 0 -- 1 V 40 V mA (Unless otherwise noted, Ta = -20 ~ +75C) min Limits typ+ max ICEO = 100A VI = 7V, IC = 150mA 40 -- -- 1.05 -- 1.7 VI = 7V, IC = 100mA VI = 18V -- -- 0.95 0.9 1.4 1.8 Input reverse current VI = 35V VI = -35V -- -- 1.9 -- 5.0 -20 Clamping diode forward voltage Clamping diode reverse current IF = 150mA VR = 40V -- -- 1.15 -- 1.6 100 V A DC amplification factor VCE = 4V, I C = 150mA, Ta = 25C 800 2500 -- -- Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) Collector-emitter saturation voltage II Input current IIR VF IR h FE Test conditions Unit V V mA A + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter ton Turn-on time toff Turn-off time Limits Test conditions CL = 15pF (note 1) NOTE 1 TEST CIRCUIT min -- typ 35 max -- -- 300 -- Unit ns ns TIMING DIAGRAM VO INPUT 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 7VP-P (2) Input-output conditions : RL = 67.5, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54528P 7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 200 Collector current Ic (mA) Power dissipation Pd (W) 2.0 1.5 1.0 0.5 0 0 25 50 75 150 100 VI = 7V 0 100 Ambient temperature Ta (C) 0.5 1.5 2.0 200 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 50 0 20 40 60 80 Collector current Ic (mA) 1~5 6 7 150 5 6 7 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 50 0 100 1~3 4 150 0 20 Duty cycle (%) 60 80 100 Grounded Emitter Transfer Characteristics 104 200 3 103 7 5 VCE = 4V Ta = 75C Ta = 25C Ta = -20C 3 3 5 7 102 3 Collector current Ic (mA) 5 7 103 Collector current Ic (mA) 7 5 102 1 10 40 Duty cycle (%) DC Amplification Factor Collector Current Characteristics DC amplification factor hFE 1.0 Duty-Cycle-Collector Characteristics Duty-Cycle-Collector Characteristics Collector current Ic (mA) 0 Output saturation voltage VCE (sat) (V) 200 0 Ta = 75C Ta = 25C Ta = -20C 50 VCE = 4V Ta = 75C Ta = 25C Ta = -20C 150 100 50 0 0 1 2 3 4 5 Input voltage VI (V) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54528P 7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Clamping Diode Characteristics Input Characteristics 200 Forward bias current IF (mA) Input current II (mA) 2.0 Ta = 75C Ta = 25C Ta = -20C 1.5 1.0 0.5 0 0 5 10 15 Input voltage VI (V) 20 25 Ta = 75C Ta = 25C Ta = -20C 150 100 50 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug. 1999