Aug. 1999
20k 2k
20k
INPUT
COM
OUTPUT
GND
The seven circuits share the COM and GND.
The diodes shown by broken line are parasite diodes and must
not be used. Unit : Ω
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
→COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
Outline 16P4
INPUTS OUTPUTS
PIN CONFIGURATION (TOP VIEW)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54528P
7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54528P is seven-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-cur-
rent driving with extremely low input-current supply.
FEATURES
●High breakdown voltage (BVCEO ≥ 40V)
●High-current driving (Ic(max) = 150mA)
●With clamping diodes
●Driving available with PMOS IC output of 8-18V
●Wide input voltage range (VI = –40 to +40V)
●Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54528P have seven circuits consisting of NPN
Darlington transistors. These ICs have resistance of 20k Ω
between input transistor bases and input pins. A spike-killer
clamping diode is provided between each output pin (collec-
tor) and COM pin (pin 9). The output transistor emitters are
all connected to the GND pin (pin 8).
The collector current is 150mA maximum. Collector-emitter
supply voltage is 40V maximum.
CIRCUIT SCHEMATIC
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +40
150
–40 ~ +40
150
40
1.47
–20 ~ +75
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Aug. 1999
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
—
1.7
1.4
1.8
5.0
–20
1.6
100
—
—
1.05
0.95
0.9
1.9
—
1.15
—
2500
40
—
—
—
—
—
—
—
800
ICEO = 100µA
VI = 7V, IC = 150mA
VI = 7V, IC = 100mA
VI = 18V
VI = 35V
VI = –35V
IF = 150mA
VR = 40V
VCE = 4V, IC = 150mA, Ta = 25°C
VO
VIH
VIL
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54528P
7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Collector-emitter breakdown voltage
Input reverse current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
V
µA
V
µA
—
II
V
V
V
Parameter
—
—
—
0
7
0
40
35
1
Limits
min typ max
Symbol Unit
IC0 — 150 mA
Symbol UnitParameter Test conditions Limits
min typ+max
V
mA
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
—
—35
300 —
—
Symbol UnitParameter Test conditions Limits
min typ max
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
“H” input voltage
“L” input voltage
Output voltage
Collector current
per channel
Percent duty cycle less
than 40%
V
(BR) CEO
IIR
VF
IR
hFE
VCE (sat)
Collector-emitter saturation voltage
Input current
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Turn-on time
Turn-off time
ton
toff CL = 15pF (note 1)
PG
50ΩC
L
Measured device
OPEN
V
O
R
L
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
P
= 7V
P-P
(2) Input-output conditions : R
L
= 67.5Ω, V
O
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54528P
7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
Duty cycle (%)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
Collector current Ic (mA)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
Duty-Cycle-Collector Characteristics
Duty cycle (%)
1~3
4
5
6
7
1~5
6
7
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification factor h
FE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current Ic (mA)
0
50
100
150
200
0 0.5 1.0 1.5 2.0
0
50
100
150
200
0 20406080100 0
50
100
150
200
0 20406080100
0
50
100
150
200
01234510
1
10
2
10
3
3
5
7
10
4
3
5
7
10
2
357
10
3
357
VCE = 4V
Ta = –20°C
Ta = 25°C
Ta = 75°C
VCE = 4V
Ta = –20°C
Ta = 25°C
Ta = 75°C
VI = 7V
Ta = –20°C
Ta = 25°C
Ta = 75°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54528P
7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics
Input voltage V
I
(V)
0
0.5
1.0
1.5
2.0
05 10152025
Input current I
I
(mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
0
0
50
100
150
200
0.5 1.0 1.5 2.0
Forward bias current I
F
(mA)
Ta = –20°C
Ta = 25°C
Ta = 75°C
Ta = –20°C
Ta = 25°C
Ta = 75°C
