Revision Date: 10/5/09
These silicon PIN diodes feature fully passivated mesa
designs with Metelic’s tri-metalization for reliable operation
under the most demanding conditions.
• Voltage Breakdown up to 800 Volts
• Passivated mesa construction
• Screening per MIL-PRF-19500
and MIL-PRF-38534 is available
Part Number
VBR
Min.
V
CJ
Max.
pF
RS
Max.
τ
Typ.
ns
Nominal
I-Region
Width
μm
Nominal
Contact
Diameter
mils
θJC
Max.
°C/W
Nominal
Chip Size
mils
MPN7453A 300 0.15
1.0 700 60 8 20
15 x 15
MPN7453B 400 0.20
0.9 2500 60 8 20
20 x 20
MPN7453C 300 0.25
0.7 1000 60 8 15
20 x 20
MPN7420 400 0.08
1.5 1000 100 5 30
15 x 15
MPN7330 300 0.40
0.5 500 30 10 10
15 x 15
MPN7360 600 1.0
0.4 2500 70 20 7
37 x 37
MPN7370 700 2.3
0.3 5000 70 40 5
64 x 64
MPN7380 800 0.6
0.5 2500 80 24 7
37 x 37
Test
Conditions IR=10 µA
VR = 50 V
IF = 100mA
f = 100 MHz
IF = 10 mA
IR = 6 mA
50%
Recovery
High Power Si PIN Diodes
Parameters Limit
Power Dissipation, PDISS
Junction Temperature, TJ+175°C
Storage Temperature, TSTG -65°C to +200°C
Reverse Voltage, VRRated VBR
Description
Electrical Specifications, TA = 25 °C
Features
Absolute Maximum Ratings
PDISS = 175°C - TC
Thermal Resistance θJC
Revision Date: 10/5/09
High Power Si PIN Diodes
Typical Performance, TA = 25 °C
0.01 0.1 1 10 100
10,000
1,000
100
10
1
0.1
MPN-7330 MPN-7453B MPN-7453A
Figure 1.
Series Resistance vs. Forward Current
RS (Ω)
IF (mA)
0.01 0.1 1 10 100
10,000
1,000
100
10
1
0.1
MPN-7370 MPN-7360 MPN-7380
Figure 3.
Series Resistance vs. Forward Current
RS (Ω)
IF (mA)
0.01 0.1 1 10 100
10,000
1,000
100
10
1
0.1
MPN-7453C MPN-7420
Figure 2.
Series Resistance vs. Forward Current
RS (Ω)
IF (mA)
A17002 (B)
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