Development Board EPC9013 Quick Start Guide 100 V Parallel Evaluation for High Current Applications Using EPC2001C Revision 2.0 QUICK START GUIDE EPC9013 DESCRIPTION The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN(R)) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive. The purpose of this development board is to simplify the evaluation process of the EPC2001C eGaN FET for high current operation by including all the critical components on a single board that can be easily connected into any existing converter. Table 1: Performance Summary (TA = 25C) EPC9013 The EPC9013 development board is 2" x 2" and features eight EPC2001C eGaN FETs using the uPI Semiconductor uP1966A gate driver. The development board configuration is recommended for high current applications. The board contains all critical components and the printed circuit board (PCB) layout is designed for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and evaluate eGaN FET efficiency. A complete block diagram of the circuit is given in Figure 1. PWM Logic Input Voltage Input `High' Threshold Input `Low' Minimum `High' State Input VPWM rise and Pulse Width fall time < 10ns Minimum `Low' State Input Pulse VPWM rise and Width (3) fall time < 10ns For more information on the EPC2001C please refer to the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide. Symbol Parameter VDD Gate Drive Input Supply Range VIN Bus Input Voltage Range(1) 70 V VOUT Switch Node Output Voltage 100 V IOUT Switch Node Output Current (2) 35 A 6 1.5 V V VPWM Conditions Min Max Units 7 12 V 200 LFM 3.5 0 60 ns 100 ns (1) Assumes inductive load, maximum current depends on die temperature - actual maximum current will be subject to switching frequency, bus voltage and thermals. (2) Maximum current depends on die temperature - actual maximum current with be subject to switching frequency, bus voltage and thermal cooling. (3) Limited by time needed to `refresh' high side bootstrap supply voltage. QUICK START PROCEDURE Development board EPC9013 is easy to set up to evaluate the performance of the EPC2001C eGaN FET. Refer to Figure 2 for proper connect and measurement setup and follow the procedure below: 1. With power off, connect the input power supply bus to +VIN (J5, J6) and ground / return to -VIN (J7, J8). 2. With power off, connect the switch node of the half bridge OUT (J3, J4) to your circuit as required. 3. With power off, connect the gate drive input to +VDD (J1, Pin-1) and ground return to -VDD (J1, Pin-2). 4. With power off, connect the input PWM control signal to PWM (J2, Pin-1) and ground return to any of the remaining J2 pins. 5. Turn on the gate drive supply - make sure the supply is between 7 V and 12 V range. EPC9013 development board 6. Turn on the bus voltage to the required value (do not exceed the absolute maximum voltage of 100 V on VOUT ). 8. Once operational, adjust the bus voltage and load PWM control within the operating range and observe the output switching behavior, efficiency and other parameters. 9. For shutdown, please follow steps in reverse. NOTE. When measuring the high frequency content switch node (OUT), care must be taken to avoid long ground leads. Measure the switch node (OUT) by placing the oscilloscope probe tip on the switch node (designed for this purpose) and grounding the probe directly across the GND terminals provided. See Figure 3 for proper scope probe technique. VIN VDD PWM Gate drive regulator Logic and dead-time adjust Q1 Level shift 7. Turn on the controller / PWM input source and probe switching node to see switching operation. Output CBypass Q2 GND For information about measurement techniques, please review the how to GaN series: HTG09- Measurement PGND Gate driver Figure 1: Block diagram of EPC9013 development board http://epc-co.com/epc/DesignSupport/TrainingVideos/HowtoGaN/ EPC - THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | | 2 QUICK START GUIDE EPC9013 7 V - 12 V - VDD supply + Gate drive supply (Note polarity) A IIN + Switch node VIN V + <70 V VIN supply - - (For efficiency measurement) External circuit PWM input EFFICIENT POWER CONVERSION Pbf Figure 2: Proper connection and measurement setup Do not use probe ground lead Spring clip against GND pad Place probe tip on pad at OUT EFFICIENT POWER CONVERSION Pbf Minimize loop Figure 3: Proper Measurement of Switch Node - VSW EPC - THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | | 3 QUICK START GUIDE EPC9013 THERMAL CONSIDERATIONS The EPC9013 development board showcases the EPC2001C eGaN FET. Although the electrical performance surpasses that for traditional silicon devices, their relatively smaller size does magnify the thermal management requirements. The EPC9013 is intended for bench evaluation with low ambient temperature and convection cooling. The addition of heat-sinking and forced air cooling can significantly increase the current rating of these devices, but care must be taken to not exceed the absolute maximum die temperature of 150C. NOTE. The EPC9013 development board does not have any current or thermal protection on board. For more information regarding the thermal performance of EPC eGaN FETs, please consult: D. Reusch and J. Glaser, DC-DC Converter Handbook, a supplement to GaN Transistors for Efficient Power Conversion, First Edition, Power Conversion Publications, 2015. Table 2: Bill of Materials Item Qty Reference Part Description Manufacturer Part Number GRM188R61E105KA12D 1 3 C4, C10, C11 Capacitor, 1 F, 10%, 25 V, X5R Murata 2 2 C16, C17 Capacitor, 100 pF, 5%, 50 V, NP0 Kemet C0402C101K5GACTU 3 2 C9, C19 Capacitor, 100 nF, 10%, 25 V, X5R TDK C1005X5R1E104K 4 12 C21, C22, C23, C24, C25, C26, C27, C28, Capacitor, 1 F, 10%, 100 V, X7R C29, C30, C31, C32 TDK CGA4J3X7S2A105K125AE 5 2 D1, D2 Schottky Diode, 30 V Diodes Inc. SDM03U40-7 6 3 J1, J2, J9 Connector FCI 68001-236HLF 7 6 J3, J4, J5, J6, J7, J8 Connector FCI 68602-224HLF 8 8 Q1, Q2, Q3, Q4, Q5, Q6, Q7, Q8 eGaN(R) FET EPC EPC2001C 9 1 R1 Resistor, 10.0 k, 5%, 1/8 W Stackpole RMCF0603FT10K0 10 2 R2, R7 Resistor, 0 , 1/10 W Panasonic ERJ-3GEY0R00V 11 1 R4 Resistor, 100 , 1%, 1/10 W Stackpole RMCF0603FT100R 12 8 R10, R11, R12, R13, R20, R21, R22, R23 Resistor, 4.7 , 1%, 1/16 W Yageo RC0402FR-074R7L 13 8 R14, R15, R16, R17, R24, R25, R26, R27 Resistor, 2.0 , 1%, 1/16 W Vishay Dale CRCW04022R00FKED 14 1 R5 Resistor, 220 , 1%, 1/10 W Stackpole RMCF0603FT220R 15 2 TP1, TP2 Test Point Keystone 5015 16 1 U1 I.C., Logic Fairchild NC7SZ00L6X 17 1 U2 I.C., Gate driver upi Semiconductor uP1966A 18 1 U3 I.C., Regulator Microchip MCP1703T-5002E/MC 19 1 U4 I.C., Logic Fairchild NC7SZ08L6X 20 1 R6 Optional Resistor 21 4 D3, D4, D5, D6 Optional Diode 22 2 P1, P2 Optional Potentiometer EPC - THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | | 4 QUICK START GUIDE 7 CON2 C10 1 F, 25 V 6 MCP1703 IN OUT NC NC NC NC NC GND 1 VCC 2 3 C11 1 F, 25 V C4 4 1 F, 25 V TP2 Keystone 5015 J5 CON4 9 1 5 U3 1 2 3 4 8 1 2 GND J1 A 1 2 CON2 J9 R1 10 k 1 2 VCC VDD B GND 2 R11 4.7 R15 2 R12 4.7 R2 0 U2 U4 A 0.1 F, 25 V C9 VDD R16 2 R13 4.7 P1 Optional B 2 R17 2 R20 4.7 4 3 2 1 J6 CON4 Q2 EPC2001 Q3 EPC2001 Y NC7SZ00L6X CON2 4.7 R14 C21 C22 C23 C24 C25 C26 1uF, 100 V Q4 EPC2001 J3 CON4 D1 SDM03U40 R4 P2 PWM2 Optional VCC 100 2 uP1966A D2 C16 SDM03U40 R6 100 pF R5 OPTIONAL 220 C17 100 pF R7 0 Q5 EPC2001 Y 0.1 F, 25 V C19 R24 2 R21 4.7 R25 2 R22 4.7 R26 2 R23 4.7 R27 2 SW OUT J4 CON4 Q6 EPC2001 Q7 EPC2001 D3 D4 D5 D6 Q8 EPC2001 J7 CON4 1 2 3 4 GND NC7SZ08L6X C27 C28 C29 C30 C31 C32 1uF, 100V 1 2 3 4 R10 U1 J2 70 V Max Q1 EPC2001 4 3 2 1 PWM1 EPC - THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | 7 - 12 Vdc FD1 FD2 FD3 HIGH VOLTAGE SIGN TP1 Keystone 5015 R3, R8, R9 4 3 2 1 1 GND J8 CON4 Local Fiducials EPC9013 Figure 4: EPC9013 - Schematic | 5 For More Information: Please contact info@epc-co.com or your local sales representative Visit our website: www.epc-co.com Sign-up to receive EPC updates at bit.ly/EPCupdates or text "EPC" to 22828 EPC Products are distributed through Digi-Key. www.digikey.com Demonstration Board Notification The EPC9013 board is intended for product evaluation purposes only and is not intended for commercial use. Replace components on the Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions. This board is intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk. As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Efficient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant. The Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this Quick Start Guide constitute a sales contract or create any kind of warranty, whether express or implied, as to the applications or products involved. Disclaimer: EPC reserves the right at any time, without notice, to make changes to any products described herein to improve reliability, function, or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the rights of others.