IXYS reserves the right to change limits, test conditions, and dimensions.
IXTN90N25L2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs V
DS = 10V, ID = 0.5 • ID25, Note 1 35 50 65 S
Ciss 23 nF
Coss V
GS = 0V, VDS = 25V, f = 1MHz 2140 pF
Crss 360 pF
td(on) 50 ns
tr 175 ns
td(off) 40 ns
tf 160 ns
Qg(on) 640 nC
Qgs V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 125 nC
Qgd 385 nC
RthJC 0.17 °C/W
RthCS 0.05 °C/W
Safe Operating Area Specification
Symbol Test Conditions Min. Typ. Max.
SOA V
DS = 250V, ID = 1.4A, TC = 75°C, tp = 3s 350 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS V
GS = 0V 90 A
ISM Repetitive, Pulse Width Limited by TJM 360 A
VSD I
F = 45A, VGS = 0V, Note 1 1.5 V
trr 266 ns
IRM 23 A
QRM 3.0 μC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IF = 45A, -di/dt = 100A/μs
VR = 80V, VGS = 0V