© 2009 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS T
J = 25°C to 150°C 250 V
VDGR T
J = 25°C to 150°C, RGS = 1MΩ 250 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 T
C = 25°C 90 A
IDM T
C = 25°C, Pulse Width Limited by TJM 360 A
IA T
C = 25°C 45 A
EAS T
C = 25°C 3 J
PD T
C = 25°C 735 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL 1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, RMS t = 1 Minute 2500 V~
IISOL 1mA t = 1 Second 3000 V~
Md Mounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS V
GS = 0V, ID = 1mA 250 V
VGS(th) V
DS = VGS, ID = 3mA 2.0 4.5 V
IGSS V
GS = ±20V, VDS = 0V ±200 nA
IDSS V
DS = VDSS 50 μA
VGS = 0V TJ = 125°C 2.5 mA
RDS(on) V
GS = 10V, ID = 0.5 • ID25, Note 1 33 mΩ
Linear L2TM Power
MOSFET w/Extended
FBSOA
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
IXTN90N25L2 VDSS = 250V
ID25 = 90A
RDS(on)
33mΩΩ
ΩΩ
Ω
DS100103(1/09)
Features
Designed for Linear Operation
International Standard Package
Guaranteed FBSOA at 75°C
Avalanche Rated
Molding Epoxy Meets UL94 V-0
Flammability Classification
MiniBLOC with Aluminium Nitride
Isolation
Applications
Programmable Loads
Current Regulators
DC-DC Converters
Battery Chargers
DC Choppers
Temperature and Lighting Controls
Advantages
Easy to Mount
Space Savings
High Power Density
Preliminary Technical Information
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
miniBLOC, SOT-227
E153432
G
D
S
S
G = Gate D = Drain
S = Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTN90N25L2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t 300μs; Duty Cycle, d 2%.
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs V
DS = 10V, ID = 0.5 • ID25, Note 1 35 50 65 S
Ciss 23 nF
Coss V
GS = 0V, VDS = 25V, f = 1MHz 2140 pF
Crss 360 pF
td(on) 50 ns
tr 175 ns
td(off) 40 ns
tf 160 ns
Qg(on) 640 nC
Qgs V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 125 nC
Qgd 385 nC
RthJC 0.17 °C/W
RthCS 0.05 °C/W
Safe Operating Area Specification
Symbol Test Conditions Min. Typ. Max.
SOA V
DS = 250V, ID = 1.4A, TC = 75°C, tp = 3s 350 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS V
GS = 0V 90 A
ISM Repetitive, Pulse Width Limited by TJM 360 A
VSD I
F = 45A, VGS = 0V, Note 1 1.5 V
trr 266 ns
IRM 23 A
QRM 3.0 μC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IF = 45A, -di/dt = 100A/μs
VR = 80V, VGS = 0V
© 2009 IXYS CORPORATION, All rights reserved
IXTN90N25L2
Fig. 1. Ou tp u t C h aracteri sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
- Volts
I
D
- A mpe res
V
GS
= 20V
12V
10V
7
V
5
V
6
V
8
V
9
V
Fig. 2. Extended Output Characteristics
@ 25º C
0
30
60
90
120
150
180
210
240
270
300
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mpe res
V
GS
= 20V
14V
12V
7
V
6
V
8
V
9
V
10
V
Fi g . 3. Outp u t C h ar acter i sti cs
@ 125ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
- Volts
I
D
- A mpe res
V
GS
= 20V
12V
10V
9V
5
V
7V
6V
8
V
Fig. 4. R
DS(on)
Normalized to I
D
= 45A Value
vs. Junction Temp erature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N ormalize d
V
GS
= 10V
I
D
= 90A
I
D
= 45A
Fig. 5. R
DS(on)
Normalized to I
D
= 45A Val u e
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 20 40 60 80 100 120 140 160 180 200 220 240
I
D
- Amperes
R
DS(on)
- No rm a lized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6 . Maximu m D r ai n C u r r ent vs.
Case Temperatu r e
0
10
20
30
40
50
60
70
80
90
100
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
ID - Am peres
IXYS REF: T_90N25L2(9R)01-20-09-A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTN90N25L2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGS - Vol ts
ID - Am pe re s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140
ID - Am peres
g
f s
- S ie mens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
40
80
120
160
200
240
280
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD - Volts
IS - Amp e res
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800 900 1000
QG - NanoCoul omb s
VGS - V o lt s
V
DS
= 125V
I
D
= 45A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
VDS - V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mu m Transien t Ther mal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2009 IXYS CORPORATION, All rights reserved
IXTN90N25L2
IXYS REF: T_90N25L2(9R)01-20-09-A
Fi g. 14. Fo r ward -Bi as Safe Op er atin g Are a
@ T
C
= 75ºC
1
10
100
1,000
1 10 100 1000
V
DS
- Volts
I
D
- A mpere s
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
Fi g. 13. Fo r w ar d -Bi as Safe Op er at i n g Ar ea
@ T
C
= 25ºC
1
10
100
1,000
1 10 100 1000
V
DS
- Volts
I
D
- A mpere s
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms