VISHAY
BAS385
Document Number 85504
Rev. 1.8, 27-Apr-04
Vishay Semiconductors
www.vishay.com
1
9612315
Small Signal Schottky Barrier Diode
Features
• Integrated protection ring against static discharge
• Very low forward voltage
Applications
Applications where a very low forward voltage
is required
Mechanical Data
Case: MicroMELF Glass Case
Weight: approx. 12 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Remarks
BAS385 VR = 30 V BAS385-GS18 or BAS385-GS08 Tape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage VR30 V
Peak forward surge current tp = 10 ms IFSM 5A
Repetitive peak forward current tp ≤ 1 s IFRM 300 mA
Forward current IF200 mA
Average forward current VRWM = 25 V IFAV 200 mA
Parameter Test condition Symbol Value Unit
Junction ambient on PC board
50 mm x 50 mm x 1.6 mm
RthJA 320 K/W
Junction temperature Tj125 °C
Storage temperature range Tstg - 65 to + 150 °C
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Document Number 85504
Rev. 1.8, 27-Apr-04
VISHAY
BAS385
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage IF = 0.1 mA VF240 mV
IF = 1 mA VF320 mV
IF = 10 mA VF400 mV
IF = 30 mA VF500 mV
IF = 100 mA VF800 mV
Reverse current VR = 25 V, tp = 300 µsI
R2.3 µA
Diode capacitance VR = 1 V, f = 1 MHz CD10 pF
Fig. 1 Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 Reverse Current vs. Junction Temperature
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
T
j
- Junction Temperature °(C)
15822
V
R
=30V
P - Reverse Power Dissipation ( mW )
R
R
thJA
= 540 K/W - Limit
@ 100% V
P
R
R
- Limit
@ 80% V
P
R
R
1
10
100
1000
25 50 75 100 125 150
15823
V
R
=V
RRM
I - Reverse Current ( µA)
R
T
j
- Junction Temperature °(C)
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Diode Capacitance vs. Reverse Voltage
0 0.5 1.0 1.5
15824
0.1
1
10
100
1000
T
j
=25°C
T
j
= 150 °C
I - Forward Current(A)
F
V
F
- Forward Voltage(V)
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
15825
f=1MHz
V
R
- Reverse Voltage(V)
C - Diode Capacitance ( pF )
D
VISHAY
BAS385
Document Number 85504
Rev. 1.8, 27-Apr-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm
Fig. 5 Board for RthJA definition (in mm)
25
2.5
10
0.71 1.3 1.27
9.9
24
0.152
0.355
95 10329
ISO Method E
9612072
1.2 (0.047)
2.4 (0.094) 2.8 (0.109)
0.8 (0.031) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035)
Reflow Soldering Wave Soldering
0.8 (0.031) 1.0 (0.039)
1.4 (0.055)
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4
Document Number 85504
Rev. 1.8, 27-Apr-04
VISHAY
BAS385
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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