Datashee
t
○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
1/36
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
Serial EEPROM series Standard EEPRO M
MicroWire BUS EEPROM (3-Wire)
BR93G76-3
●General Description
BR93G76-3 is serial EEPROM of serial 3-line Interface method.
They are dual organizati on(by 16bit or 8bit) and it is selected by the input of ORG PIN.
●Features
■ 3-line communications of chip select, serial clock,
serial data input / output (the case where input and
output are shared)
■ Operations available at high spee d 3MHz clock
(4.5 V~5.5 V)
■ High speed write available (write time 5ms max.）
■ Same package and pin configuration from 1Kbit to
16Kbit
■ 1.7~5.5V single power source oper ation
■ Address auto increment function at read operation
■ Write mistake prevention function
» Write prohibition at power on
» Write prohibition by command code
» Write mistake prevention function at low voltage
■ Self-timed programming cycle
■ Program condition display by READY / BUSY
■ Dual organization : b y 16 bit (X16) or 8 bit (X8)
■ Compact package
SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/
TSSOP-B8J/DIP-T8/VSON008X2030
■ More than 40 years data retention
■ More than 1 million write cycles
■ Initial delivery state all addresses FFFFh (X16) or
FFh (X8)
●Packages W(Typ.) x D(Typ.)x H(Max.)
●BR93G76-3
Capacity Bit format Type Power source
voltage DIP-T8*1 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 VSON008
X2030
8Kbit 512×16 or1024×8 BR93G76-3
1.7~5.5V ● ● ● ● ● ● ● ●
*1 DIP-T8 is not halogen free package
SOP8
5.00mm x 6.20mm x 1.71mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
V
SON008X2030
2.00mm x 3.00mm x 0.60mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
DIP-T8
9.30mm x 6.50mm x 7.10mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
MSOP8
2.90mm x 4.00mm x 0.90mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
2/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Absolute Maximum Ratings
Parameter Symbol Ratings Unit Remarks
Supply voltage VCC -0.3 to +6.5 V
Permissible
dissipation Pd
800 (DIP-T8)
mW
When using at Ta=25℃ or higher 8.0m W to be reduced per 1 ℃.
450 (SOP8) When using at Ta=25℃ or higher 4.5m W to be reduced per 1 ℃.
450 (SOP-J8) When using at Ta=25℃ or higher 4.5m W to be reduced per 1 ℃.
300 (SSOP-B8) When using at Ta=25℃ or higher 3.0m W to be reduced per 1 ℃.
330 (TSSOP-B8) When using at Ta=25℃ or higher 3.3m W to be reduced per 1 ℃.
310 (TSSOP-B8J) When using at Ta=25℃ or higher 3.1m W to be reduced per 1 ℃.
310 (MSOP8) When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
300 (VSON008X2030) When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
Storage
temperature Tstg －65 to +150 ℃
Operating
temperature Topr －40 to +85 ℃
Input voltage/
Output voltage ‐ -0.3 to Vcc+1.0 V The Max value of Input voltage/output voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
voltage/Output voltage is not under -0.8V.
Junction
temperature Tjmax 150 ℃ Junction temperature at the storage condition
●Memory cell characteristic s (VCC= 1.7～5.5V)
Parameter Limit Unit Condition
Min. Typ. Max.
Write cycles *1 1,000,000 - - Times Ta=25℃
Data retention *1 40 - - Years Ta=25℃
○Shipment data all address FFFFh(X16) or FFh(X8)
*1 Not 100% TESTED
●Recommended Operation Ratings
Parameter Symbol Limits Unit
Supply voltage VCC 1.7~5.5 V
Input voltage VIN 0~VCC
3/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●DC characteristics (Unless otherwise specified, VCC=1. 7～5.5V, Ta=-40～+85℃)
Parameter Symb
ol
Limits Unit Condition
Min. Typ. Max.
Input low voltage VIL -0.3*1 - 0.3VCC V 1.7V≦VCC≦5.5V
Input high voltage VIH 0.7VCC - VCC+1.0 V 1.7V≦VCC≦5.5V
Output low voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 2.7V≦VCC≦5.5V
Output low voltage 2 VOL2 0 - 0.2 V IOL=100μA
Output high voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 2.7V≦VCC≦5.5V
Output high voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100μA
Input leakage current1 I LI1 -1 - +1 µA VIN=0V~VCC(CS,SK,DI)
Input leakage current2 I LI2 -1 - +3 µA VIN=0V~VCC(ORG)
Output leakage current ILO -1 - +1 µA VOUT=0V~VCC, CS=0V
Supply current
ICC1 - - 1.0 mA VCC=1.7V, fSK=1MHz, tE/W=5ms (WRITE)
- - 2.0 mA VCC=5.5V ,fSK=3MHz, tE/W=5ms (WRITE)
ICC2 - - 0.5 mA fSK=1MHz (READ)
- - 1.0 mA fSK=3MHz (READ)
ICC3 - - 2.0 mA
VCC=2.5V, f SK=1MHz
tE/W=5ms (WRAL, ERAL)
- - 3.0 mA
VCC=5.5V ,fSK=3MHz
tE/W=5ms (WRAL, ERAL)
Standby current ISB1 - - 2.0 µA CS=0V, ORG=VCC or OPEN
ISB2 - - 15 µA CS=0V, ORG=0V
*1 When the pulse width is 50ns or less, the Min value of VIL is admissible to -0.8V.
4/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●AC characteristics (Unless otherwise specified, VCC=1.7~2.5V, Ta=-40~+85℃)
Parameter Symbol Limits Unit
Min. Typ. Max.
SK frequency fSK - - 1 MHz
SK high time tSKH 250 - - ns
SK low time tSKL 250 - - ns
CS low time tCS 250 - - ns
CS setup time tCSS 200 - - ns
DI setup time tDIS 100 - - ns
CS hold time tCSH 0 - - ns
DI hold time tDIH 100 - - ns
Data “1” output delay tPD1 - - 400 ns
Data “0” output delay tPD0 - - 400 ns
Time from CS to output establishment tSV - - 400 ns
Time from CS to High-Z tDF - - 200 ns
Write cycle time tE/W - - 5 ms
(Unless otherwise specified, V CC= 2.5~4.5V, Ta=-40~ +85℃)
Parameter Symbol Limits Unit
Min. Typ. Max.
SK frequency fSK - - 2 MHz
SK high time tSKH 230 - - ns
SK low time tSKL 200 - - ns
CS low time tCS 200 - - ns
CS setup time tCSS 50 - - ns
DI setup time tDIS 100 - - ns
CS hold time tCSH 0 - - ns
DI hold time tDIH 100 - - ns
Data “1” output delay tPD1 - - 200 ns
Data “0” output delay tPD0 - - 200 ns
Time from CS to output establishment tSV - - 150 ns
Time from CS to High-Z tDF - - 100 ns
Write cycle time tE/W - - 5 ms
(Unless otherwise specified, V CC= 4.5~5.5V, Ta=-40~ +85℃)
Parameter Symbol Limits Unit
Min. Typ. Max.
SK frequency fSK - - 3 MHz
SK high time tSKH 100 - - ns
SK low time tSKL 100 - - ns
CS low time tCS 200 - - ns
CS setup time tCSS 50 - - ns
DI setup time tDIS 50 - - ns
CS hold time tCSH 0 - - ns
DI hold time tDIH 50 - - ns
Data “1” output delay tPD1 - - 200 ns
Data “0” output delay tPD0 - - 200 ns
Time from CS to output establishment tSV - - 150 ns
Time from CS to High-Z tDF - - 100 ns
Write cycle time tE/W - - 5 ms
5/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Serial input / output timing
○Data is taken by DI sync with the rise of SK.
○At read operation, data is output from DO in sync with the rise of SK.
○The STATUS signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is high, and valid until the ne xt command start bit is input. And, while CS is low, DO becomes High-Z .
○After completion of each mode execution, set CS low once for internal circuit reset, and execute the following operation
mode.
○1/fSK is the SK clock cycle, even if fSK is maximum, the SK clock cycle can’t be tSKH(Min.)+tSKL(Min.)
○For “Write cycle time tE/W”, please see Fig ure 36,37,39,40.
○For “CS low time tCS”, please see Figure 36,37,39, 40.
●Block diagram
Figure 1. Sync data input / output timing
CS
SK
DO(READ)
DI
DO(WRITE
)
tCS S tSKH tSKL tCSH
tDIS t
D I H
tPD1
tPD0
t DF
ST ATUS VALID
tSV
1/fSK
Command decode
Control
Clock generation
Power source voltage detection
Write
prohibition High voltage occurrence
Command
re
g
iste
r
Address
buffer
SK
DI
Dummy bit
DO
Data
register R/W
amplifier
9bit or 10bit
9bit or 10bit
16bit/8bit 16bit/8bit
8,192 bit
EEPROM
CS
Address
decoder
ORG
Figure 2. Block diagram
6/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Pin Configuration
●Pin Descriptions
Figure 3. Pin Configuration
Pin name I / O Function
CS Input Chip select input
SK Input
Serial clock input
DI Input Start bit, ope code, address, and serial data input
DO Output
Serial data output, READY / BUSY
――――― STATUS display output
GND - All input / output reference voltage, 0V
ORG Input Organization select, X16mode or X8 mode*1
DU - Don’t use terminal *2
VCC - Supply voltage
*1 The memory array organization may be divided into either X8 or X16 which is selected by pin ORG.
When ORG is OPEN or connected to VCC, X16 organization is selected.
When ORG is connected to ground, X8 organization is selected.
*2 Terminals not used may be set to any of high, low, and OPEN
VCC DU ORG GND
CS SK DI DO
BR93G76-3 :DIP-T8
BR93G76F-3 :SOP8
BR93G76FJ-3 :SOP-J8
BR93G76FV-3 :SSOP-B8
BR93G76FVT-3 :TSSOP-B8
BR93G76FVJ-3 :TSSOP-B8J
BR93G76FVM-3 :MSOP8
BR93G76NUX-3 :VSON008X2030
7/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves
Figure 4.Input high voltage VIH (CS,SK,DI,ORG) Figure 5. Input low voltage VIL(CS,SK,DI,ORG)
Figure 6.Output low voltage1 VOL1(VCC=2.7V) Figure 7. Output lo w voltage2 VOL2 (VCC=1.7V)
0
1
2
3
4
5
6
0123456
SUPPLY VOLTAGE: VCC(V)
I NPUT HIG H VOLTAGE : V
IH
(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
5
6
0123456
SUPPLY VOLTAGE: VCC(V)
I NPUT LO W VOLTAG E : V
IL
(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.2
0.4
0.6
0.8
1
012345
O UTPUT LO W CURRENT: I
OL
(mA)
OUTPUT LOW VO LTAGE1 : V
OL1
(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.2
0.4
0.6
0.8
1
012345
OUTPUT LOW CURRENT : IOL(mA)
O UTPUT LOW VO LTAG E2 : V
OL2(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
8/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
Figure 8. Output high voltage1 VOH1(VCC=2.7V) Figure 9. Output high voltage2 VOH2(VCC=1.7V)
0
0.2
0.4
0.6
0.8
1
1.2
0123456
SUPPLY VOLTAGE: VCC(V)
INPUT LEA K A GE CURRE NT1 : I
LI1
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
5
0123456
SUPPLY VOLTAGE: VCC(V)
INPUT LEAKAGE CURRENT2 : I
LI2
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
Figure 10. Input leakage current1 ILI1 (CS,SK,DI) Figure 11. Input leakage current2 ILI2(ORG)
0
1
2
3
4
5
0 0.4 0.8 1.2 1.6
OUT P UT HIG H CURRE NT: I
OH
(mA)
O UTPUT HIG H VOLTAG E1 : V
OH1
(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
0 0.4 0.8 1.2 1.6
OUT P UT HIG H CURRENT : I OH(mA)
O UTPUT HIG H V O LTAGE2 : V
OH2(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
9/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
0
0.2
0.4
0.6
0.8
1
1.2
0123456
SUPPLY VOLTAG E: VCC(V )
OUTPUT LEAKAGE CURRENT : I
LO
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
S UPP LY CURRE NT ( RE A D) : I
CC2
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
Figure 12. Output leakage current ILO(DO) Figure 13. Supply current (WRITE )
ICC1(WRITE, fSK=1MHz)
Figure 14. Supply current (WRITE)
ICC1(WRITE,fSK=3MHz) Figure 15. Supply current (READ)
ICC2(READ,fSK=1MHz)
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
SUPPLY CURRENT (WRITE) : I
CC1
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
5
0123456
SUPPLY VOLTAGE: VCC(V)
SU P P LY CU RRE NT (WRIT E ) : I
CC1
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
10/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
S UP P LY CURRENT ( RE A D) : I
CC2
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
S TANDB Y CUR RE NT : I SB1(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
Figure 16. Supply current (READ)
ICC2(READ,fSK=3MHz) Figure 17. Supply current (WRAL)
ICC3［WRAL,fSK=1MHz］
Figure 18. Supply current (WRAL)
ICC3(WRAL,fSK=3MHz)
Figure 19. Standby current
ISB1(CS=0V, ORG=VCC or OPEN)
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
SU P P LY CURRENT ( WRAL) : I
CC3
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
5
0123456
SUPPLY VOLTAGE: VCC(V)
SUPPLY CURRENT(W RAL) : I
CC3
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
11/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
0
5
10
15
20
0123456
SUPPLY VOLTAGE: VCC(V)
STANDB Y CURRE NT : I
SB2
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
100
200
300
400
500
0123456
SUPPLY VOLTAGE: VCC(V)
SK HIGH TIME : t
SKH
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
SPEC
Figure 20. Standby current
ISB2(CS=0V, ORG=0V)
Fi
gure
21
.
SK
f
requency
f
SK
Fi
gure
2
2
.
SK
hi
g
h
t
i
me tSKH
Fi
gure
2
3
.
SK
l
o
w
t
i
me tSKL
0.01
0.1
1
10
100
1000
0123456
SUP P LY VO LTAG E : VCC( V)
SK FREQUENCY : f
SK
(MHz)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
SPEC
0
100
200
300
400
500
0123456
SUPPLY VOLTAGE: VCC(V)
SK LOW T IME : t
SKL
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
SPEC
12/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
-300
-250
-200
-150
-100
-50
0
50
0123456
SUPPLY VOLTAGE: VCC(V)
CS HOLD TI M E : t
CSH
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
100
200
300
400
500
0123456
SUPPLY VOLTAGE: VCC(V)
CS LOW T IM E : t
CS
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
0
50
100
150
200
250
300
0123456
SUPPLY VOLTAGE: VCC(V)
CS SETUP T I ME : t
CSS
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
-50
0
50
100
150
0123456
SUPPLY VO LTAGE: VCC(V )
DI SETUP TI ME : t
DIS
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
Fi
gure
2
4
.
CS
l
o
w
t
i
me tCS
Fi
gure
2
5.
CS
h
o
ld
t
i
me tCSH
Fi
gure
2
6
.
CS
setup t
i
me tCSS
Fi
gure
2
7.
DI
setup t
i
me tDIS
13/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
-50
0
50
100
150
0123456
SUPPLY VOLTAGE: VCC(V)
DI HOLD T IME : t
DIH
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃ SPEC
0
200
400
600
800
1000
0123456
SUPPLY VOLTAGE: VCC(V)
DATA "0" OUTPUT DELAY : t
PD0
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
0
100
200
300
400
500
0123456
SUPPLY VOLTAGE: VCC(V)
TIME FROM CS TO OUTPUT ESTABLISHMENT
:
t
SV
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
Fi
gure
2
8
.
DI
h
o
ld
t
i
me tDIH
Fi
gure
2
9
.
D
ata
"0"
output
d
e
l
a
y
tPD0
Fi
gure
30
.
D
ata
"1"
output
d
e
l
a
y
tPD1
Fi
gure
31
.
Ti
me
f
rom
CS
to output esta
bli
s
h
ment tSV
0
200
400
600
800
1000
0123456
SUPPLY VOLTAGE: VCC(V)
DATA "1" OUTPUT DELAY : t
PD1
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
14/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
0
50
100
150
200
250
0123456
SUPPLY VOLTAGE: VCC(V)
TIME FROM CS TO HIGH-Z : t
DF
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
0
1
2
3
4
5
6
0123456
S UPP LY VOLT AGE: VCC(V)
WRITE CYCLE TIME : t
E/W
(ms)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
Fi
gure
3
2
.
Ti
me
f
rom
CS
to
Hi
g
h
-
Z
tDF
Fi
gure
3
3
.
W
r
i
te cyc
l
e t
i
me tE/W
15/36
Datasheet
Datasheet
BR93G76-3
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07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Description of operations
Communications of the MicroWire BUS are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and
CS (chip select) for device selection.
When to connect one EEPROM to a microcontroll er, connect it as shown in Figure 34(a) or Figure 34(b). When to use the
input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure 34(b) (Refer to
pages 21, 22.), and connection by 3 lines is available.
In the case of plural connections, refer to Figure 34 (c).
Communications of the MicroWire BUS are started by the first “1” input after the rise of CS. This input is called a start bit.
After input of the start bit, input ope code, address and data. Address and data are i np ut all in MSB first manners.
“0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of the
microcontroller, input “0” befor e the star t bit input, to control the bit width.
●Command mode
ORG=H or OPEN
Command Start
bit Ope
code
Address Data
MSB of Data(Dx) is D15 Required clocks(n)
BR93G76-3
MSB of Address(Am) is A9
Read (READ) *1 1 10 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(READ DATA) BR93G76-3:n=29
Write enable (WEN) 1 00 1 1 * * * * * * * * BR93G76-3:n=13
Write disable (WDS) 1 00 0 0 * * * * * * * *
Write (WRITE) *2 1 01 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(WRITE DATA)
BR93G76-3:n=29
Write all (WRAL) *2 1 00 0 1 * * * * * * * * D15~D0(WRITE DATA)
Erase (ERASE) 1 11 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 BR93G76-3:n=13
Erase all (ERAL) 1 00 1 0 * * * * * * * *
A9 of BR93G76 becomes Don't Care.
ORG=L
Command Start
bit Ope
code
Address Data
MSB of Data(Dx) is D7 Required clocks(n)
BR93G76-3
MSB of Address(Am) is A10
Read (READ) *1 1 10 A10,A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D7~D0(READ DATA) BR93G76-3:n=22
Write enable (WEN) 1 00 1 1 * * * * * * * * * BR93G76-3:n=14
Write disable (WDS) 1 00 0 0 * * * * * * * * *
Write (WRITE) *2 1 01 A10,A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D7~D0(WRITE DATA) BR93G76-3:n=22
Write all (WRAL) *2 1 00 0 1 * * * * * * * * * D7~D0(WRITE DATA)
Erase (ERASE) 1 11 A10,A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 BR93G76-3:n=14
Erase all (ERAL) 1 00 1 0 * * * * * * * * *
A10 of BR93G76 becomes Don't Care.
・ Input the address and the data in MSB first manners.
・ As for *, input either “1” or “0” .
*Start bit
Acceptance of all the commands of this IC starts at recognition of the start bit.
The start bit means the first “1” input after the rise of CS.
*1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are
sequentially output continuously. (Auto increment function)
*2 For write or write all commands, an internal erase or erase all is included and no separate erase or erase all is needed before write or write all command.
(a). Connection by 4 lines
CS
SK
DO
DI
CS
SK
DI/O
CS
SK
DI
DO
(b). Connection by 3 lines
CS
SK
DI
DO
CS3
CS2
CS1
SK
DO
DI
CS
SK
DI
DO
Device 1
CS
SK
DI
DO
Device 2
CS
SK
DI
DO
Device 3
(c). Connection example of plural devices
Figure 34. Connection method with microcontroller
Micro-
controller BR93GXX
Micro-
controller
Micro-
controller
BR93GXX
16/36
Datasheet
Datasheet
BR93G76-3
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07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Timing chart
1) Read cycle (READ)
*1 Start bit
When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is
recognized as a start bit, and the following operation is started. This is common to all the commands to described hereafter.
*2 For the meaning of Am,Dx,n,please see tables of command mode in Page15. For example, ORG=H or OPEN,Am=A9,Dx=D15,n=29.
○When the read command is recognized, input address data (16bit or 8bit) is output to serial. And at that moment, at
taking A0, in sync with the rise of SK, “0” (dumm y bit) is output. And, the following data is output in sync
with the rise of SK.
This IC has an address auto increment function which is valid only at read command. This is the function where after the
above read executio n, by cont inuously i nputting SK clock, t he abov e addr ess data is read sequential ly. And, durin g the
auto increment, keep CS at high.
2) Write cycle (WRITE)
For the meaning of Am,Dx,n, please see tables of command mode in Page15.
○In this command, input 16bit or 8bit data are written to designated addresses (Am~A0). The actual write starts by the fall
of CS of D0 taken SK clock.
When STAT US is not detected (CS=low fixed),make sure Max 5ms time is in comforming with tE/W.
When STATUS is detected (CS=high), all commands are not accepted for areas where low (BUSY) is output from DO,
therefore, do not input any command.
3) Write all cycyle (WRAL)
For the meaning of Dx,n,please see tables of command mode in Page15.
○In this command, input 16bit or 8bit data is written simultaneously to all adresses. Data is not written continuousl y per
one word but is written in bulk, the write time is only Max. 5ms in conformity with tE/W.
In WRAL, STAT US can be detected in the same manner as in WRITE command.
CS
1
2
1
4
High-Z
1
Am
A1
A0
0
Dx
Dx-1
D1
Dx
Dx-1
*1
*2
D0
SK
DI
DO
0
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
n
n+1
*2
CS
1 2
1
4
High-Z
0
A
m
A
1
A
0Dx Dx-1 D1
～
～
D0
SK
DI
DO
1
～
～
～
～
～
～
～
～
～
～
～
～
～
～
n
STATUS
t
CS
t
SV
BUSY
～
～
～
～
～
～
～
～
～
～
t
E/W
READY
CS
1 2
1
5
High-Z
0 0 0 Dx Dx-1 D1
～
～
D0
SK
DI
DO
～
～
～
～
～
～
～
～
～
～
～
～
～
～
n
STATUS
t
CS
t
SV
BUSY
～
～
～
～
～
～
～
～
～
～
t
E/W
READY
1
～
～
～
～
Figure 35. Read cycle
Figure 36. Write cycle
Figure 37. Write all cycle
Am: MSB of address
Dx: MSB of data
n: required clocks
Am: MSB of address
Dx: MSB of data
n: required clocks
Dx: MSB of data
n: required clocks
17/36
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TSZ22111・15・001
4) Write enable (WEN) / disable (WDS) cycle
For the meaning of n,please see tables of command mode in Page15.
○At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is
necessary to execute the write enable com mand. And, once this command is executed, it is valid unitl the write disabl e
command is executed or the power is turned off. However, the read command is valid irrespective of write enable /
diable command. Input to SK after 6 clocks of this command is available by either “1” or “0”, but be sure to input it.
○When the write enable command is executed after power on, write enable status gets in. When the write disable
command is executed then, the IC gets in write disa ble status as same as at power on, and then the write command is
canceled thereafter in software manner. However, the read command is executable. In write enable status, even when
the write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the
write disable command after completion of writ e.
5) Erase cycle (ERASE)
For the meaning of Am,n,please see tables of command mode in Page15.
○In this command, data of the designated address is made into “1”. The data of the designated address
becomes “FFFFh or FFh”.
Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock.
In ERASE, STATUS can be detected in the same man ner as in WRITE command.
6) Erase all cycle (ERAL)
For the meaning of n,please see tables of command mode in Page15.
○In this command, data of all addresses is made into “1”. Data of all addresses becomes ”FFFFh or FFh”.
Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input.
In ERAL, STATUS can be detected in the same manner as in WRAL command.
Figure 38. Write enable (WEN) / disable (WDS) cycle
CS
1
2
1 1 1
4
High-Z
～
～
SK
DI
DO
～
～
STATUS
t
CS
t
SV
BUSY
t
E/W
READY
A
m
～
～
～
～
～
～
A
3
A
2
A
1
n
A
0
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
Figure 39. Erase cycle
CS
1
2
1
4
High-Z
SK
DI
DO
～
～
STATUS
t
CS
t
SV
BUSY
～
～
～
～
～
～
t
E/W
READY
1
n
～
～
～
～
～
～
～
～
～
～
～
～
～
～
0 0
0
～
～
Figure 40. Erase all cycle
CS
1
2
1
5
High-Z
0 0
SK
DI
DO
n3 4 6
7
8
ENABLE=1 1
DISABLE=0 0
～
～
～
～
～
～
～
～
n: required clocks
Am: MSB of address
n: required clocks
n: required clocks
18/36
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BR93G76-3
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07.JAN.2013 REV.001
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TSZ22111・15・001
●Application
1)Method to cancel each command
○READ
○WRITE,WRAL
○ERASE, ERAL
*1 For the meaning of m,x, please see tables of command mode in Page15
Figure 41. READ cancel available timing
Note 1) If VCC is made OFF in thi s ar ea, designated a dd ress dat a is not
guaranteed, therefore write once again is suggested.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fall in SK=low area.
As for SK rise, recommend timing of tCSS/tCSH or higher.
Figure 42. WRITE, WRAL cancel available timing
Start bit Ope code Address Data
1bit 2bit m+1bit x+1bit
Cancel is available in all areas in read mode.
・Method to cancel：cancel by CS=low
*1
a：From start bit to the clock rise of D0 taken
Cancel by CS=low
b：The clock rise of D0 taken and after
Cancellation is not available by any means.
c：n+1 clock rise and after
Cancel by CS=low
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously cancel function is not available.
Start bit Ope code Address Data t
E/W
a
*1
1bit 2bit m+1bit x+1bit
c
b
*1 For the meaning of m,n,x,
please see tables of command mode in Page15
*1
Figure 43. ERASE, ERAL cancel available timing
a：From start bit to clock rise of A0 taken
Cancel by CS=low
b：Clock rise of A0 taken
Cancellation is not available by any means.
c：n+1 clock rise and after
Cancel by CS=low
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously cancel function is not available.
Note 1) If VCC is made OFF in thi s ar ea, designated a dd ress dat a is not
guaranteed, therefore write once again is suggested.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fall in SK=low area.
As for SK rise, recommend timing of tCSS/tCSH or higher.
*1 For the meaning of m,n,please see tables of command mode in Page15
Clock rise of A0 taken
SK
DI
n-1
A1
n n+1 n+2
b c
a
Enlarged figure
A0
Clock rise of D0 taken
SK
DI
n-1
D1
D0
n n+1 n+2
b
Enlarged figure
c
a
A1
1bit 2bit m+1bit
a c
b
Start bit Ope code Address t
E/W
*1
19/36
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TSZ22111・15・001
2) At standby
When CS is low and ORG is high or OPEN, even if SK,DI,DO are low,high or with middle electric potential, current does not
over ISB1 Max.
When CS is low, even if SK,DI,DO and ORG are low,high or with middle electric potential, current does not over ISB2 Max.
3) I/O peripheral circuit
3-1) Pull down CS.
By making CS=low at power ON/OFF, mistake in operation and mistake write are prevented.
○Pull down resistance Rcs of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an
appropriate value to this resistance valu e from microcontroller VOH, IOH, and VIL characteristics of this IC.
3-2) DO is available in both pull up and pull down.
Do output always is High-Z e xcept in READY / BUSY STATUS and data output in read command.
Malfunction may occur when High-Z is input to the microcontroller port connected to DO, it is necess ary to pull down
and pull up DO. W hen there is no influence u pon the microcontroller operations, DO may be OPEN.
If DO is OPEN, and at timing to output STATUS READY, at timing of CS=high, SK=high, DI=high, EEPROM
recognizes this as a start bit, resets READY output, and DO=High-Z, therefore, READY signal cannot be detected. To
avoid such output, pull up DO pin for improvement.
Figure 45. READY output timing at DO=OPEN
Figure 44. CS pull down resistance
VOHM
IOHM
Rcs ≧ ・・・①
2.4
2×10-3
∴ Rcs
≧ 1.2 [kΩ]
VOHM ≧ V
IHE ・・・②
Rcs ≧
Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
from the equation ①,
・VIHE
・VOHM
・IOHM
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
: EEPROM VIH specifications
: Microcontroller VOH specifications
: Microcontroller IOH specifications
Microcontroller
V
OHM
high ou tput I
OHM
Rcs
V
IHE
low input
EEPROM
CS
SK
DI
DO
D0
BUSY
READY
High-Z
Enlarged
CS
SK
DI
DO
BUSY
High-Z
Impr ovement by DO pul l up
BUSY READY
CS=SK=DI=high
When DO=OPEN
CS=SK=DI=high
When DO=pull up
DO
high
20/36
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TSZ22111・15・001
○Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
○READY / BUSY STATUS display (DO terminal)
This display outputs the internal STATUS signal. When CS is started after tCS
from CS fall after write command input, high or low is output.
R/B display＝low (BUSY) = write under execution
After the timer circuit in the IC works and creates the period of tE/W, this timer circuit completes automatically.
And the memory cell is written in the period of tE/W, and during this period, other command is not accepted.
R/B display = high (READY) = command wait STATUS
After tE/W (max.5ms) the following command is accepted.
Therefore, CS=high in the period of tE/W, and If signals are input in SK, DI, malfunction may occur,
therefore, DI=low in the area
CS=high. (Especially, in the case of shared input port, attention is required.)
*Do not input any command while STATUS signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.
Therefore, STATUS READY output is cancelled, and malfunction and mistake write may occur.
Figure 46. DO pull up resistance
Rpu ≧ ・・・③
5－0.4
2.1×10-3
∴ Rpu
≧ 2.2 [kΩ]
VOLE ≦ V
ILM ・・・④
Rpu ≧
Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③,
VCC－VOLE
IOLE
With the value of Rpu to satisfy the above equation, VOLE becomes
0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied.
Rpd ≧ ・・・⑤
5－0.2
0.1×10-3
∴ Rpd
≧ 48 [kΩ]
VOHE ≧ V
IHM ・・・⑥
Rpd ≧
Example) When VCC =5V, VOHE=VCC－0.2V, IOHE=0.1mA,
VIHM=VCC×0.7V from the equation ⑤,
VOHE
IOHE
With the value of Rpd to satisfy the above e quation, V OHE becomes 2.4V
or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
Figure 47. DO pull down resistance
（DO STATUS）
（DO STATUS）
Figure 48. READY/BUSY STATUS output timing chart
: EEPROM VOL specifications
: EEPROM IOL specifications
: Microcontroller VIL specifications
・VOLE
・IOLE
・VILM
: EEPROM VOH specifications
: EEPROM IOH specifications
: Microcontroller VIH specifications
・VOHE
・IOHE
・VIHM
CS
High-Z
SK
DI
DO
CLOCK
WRITE
INSTRUCTION
READY
STATUS
tSV
BUSY
tE/W
Microcontroller
V
ILM
low input
I
OLE
V
OLE
low output
EEPROM
Rpu
Microcontroller
V
IHM
high input I
OHE
V
OHE
high out put
EEPROM
Rpd
21/36
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TSZ22111・15・001
4) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,
meanwhile, by inserting a resist ance R between these DI an d DO te rminals, it i s possible to carry ou t contro l by 1 co ntrol line .
○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input of EEPROM.
Drive from the microcontroller DI/O output to DI input of EEPROM on I/O timing, and output signal from DO output of
EEPROM occur at the same time in the following points.
4-1) 1 clock cycle to take in A0 addr ess data at read command
Dummy bit “0” is output to DO terminal.
→When address data A0 = “1” input, through current route occurs.
4-2) Timing of CS = high after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, High-Z gets in.
→Especially, at command inp ut after write, when CS input is started with microcontroller DI/O output low,
READY output high is output from DO terminal, and through current route occurs.
Feedback input at timing of these (4-1) and (4-2) does not cause disorder in basic operations, if resistance R is inserted.
Note) As for the case (4-2), attention must be paid to the following.
When STATUS READY is output, DO and DI are shared, DI=high and the microcontroller DI/O=High-Z or the microcontroller DI/O=high,if SK clock
is input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at STATUS READY
output, set SK=low, or start CS within 4 clocks after high of READY signal is output.
Microcontroller
DI/O PORT
DI
EEPROM
DO
R
Figure 49. DI, DO control line common connection
Figure 50. Collision timing at read data output at DI, DO direct connection
EEPROM CS input
EEPROM SK input
EEPROM DI input
EEPROM DO output
Microcontroller DI/O port
Wri t e c o m mand
Microcontroller output
BUSY
BUSY READY
READY
READY
Collision of DI input and DO output
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
High-Z
Wri t e c o m mand
Wri t e c o m mand
Wri t e c o m mand
Wri t e c o m mand
Microcontroller input Microcontroller output
Figure 51. Collision timing at DI, DO direct connection
Figure.52 Start bit input timing at DI, DO direct connection
*1
*1 For the meaning of x ,
please see tables of command mode in Page15.
EEPROM CS input
EEPROM SK input
EEPROM DI input
EEPROM DO output
Microcontroller DI/O port
A1
High-Z
Collision of DI input and DO output
high
A0
0 Dx Dx-1 Dx-2
A1 A0 High-Z
Microcontroller output Microcontroller input
CS
SK
DI
DO
READY
High-Z
Start bit
Because DI=high, set
SK=low at CS rise.
22/36
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TSZ22111・15・001
○Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of po wer source may occur. When all owable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resist ance R, and set the value R to satisfy EEPROM input level VIH/VIL even
under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon
basic operations.
4-3) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is high, EEPROM DO outputs low, and high is input to DI)
・Make the through current to EEPROM 10mA or below.
・See to it that the level VIH of EEPROM should satisfy the following.
4-4) DO STATUS READY output timing
(When the microcontroller DI/O is lo w, EEPROM DO output high, and low is input to DI)
・Set the EEPROM input level VIL so as to satisfy the following.
Figure 53. Circuit at DI, DO direct connection (Microcontroller DI/O high output, EEPROM low output)
Conditions
VIHE ≦ I
OHM×R + VOLE
At this moment, if VOLE=0V,
V
IHE ≦ I
OHM×R
∴ R ≧ ・・・⑦
VIHE
IOHM
Conditions
VILE ≧ V
OHE – IOLM×R
As this moment, VOHE=VCC
V
ILE ≧ VCC – IOLM×R
∴ R ≧ ・・・⑧
VCC – VILE
IOLM
Figure 54. Circuit at DI, DO direct connection (Microcontroller DI/O low output, EEPROM high output)
Example) When VCC=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,
From the equation ⑦, From the equation⑧,
R ≧
R ≧
VIHE
IOHM
3.5
0.4×10-3
∴ R ≧ 8.75 [kΩ] ・・・⑨
R ≧
R ≧
VCC – VILE
IOLM
5 – 1.5
2.1×10-3
∴ R ≧ 1.67 [kΩ] ・・・⑩
Therefore, from the equations ⑨ and ⑩,
∴ R ≧ 8.75 [kΩ]
: EEPROM VIH specifications
: EEPROM VOL specifications
: Microcontroller IOH specifications
・VIHE
・VOLE
・IOHM
: EEPROM VIL specifications
: EEPROM VOH specifications
: Microcontroller IOL specifications
・VILE
・VOHE
・IOLM
Microcontroller
DI/O PORT DI
EEPROM
DO
R
high output
I
OHM
V
OHM
V
OLE
low output
Microcontroller
DI/O PORT DI
EEPROM
DO
R
low output
I
OLM
V
OLM
V
OHE
high ou tput
23/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5) I/O equivalence circuit
6) Power-Up/Down conditions
○At power ON/OFF, set CS low.
When CS is high, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may
cause malfunction, mistake write or so. To prevent these, at power ON, set CS low. (When CS is in lo w status all inputs
are cancelled.) And at power decline, o wing to po wer line capacity and so forth, low power status may continue long. At
this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS low.
○POR citcuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR operation, it gets in write
disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However , if CS is
high at power ON/OFF, it may become write enable status owing to noises and the likes. For secure operations, observe
the follwing conditions.
1. Set CS=low
2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit operation.
○LVCC circuit
LVCC (VCC-Lockout) circuit prevents data rewrite operation at low power, and prevents wrong write.
At LVCC voltage (Typ.=1.2V) or below, it pre v ent data rewrite
Output circuit
DO
OEint.
Input citcuit
CS CSint.
RESET int.
Input circuit
DI
CS int.
Input circuit
SK
CS int.
Figure 55. Output circuit (DO)
Figure 57. Input circuit (DI)
Figure 56. Input circuit (CS)
Figure 58. Input circuit (SK)
tOFF
tR
Vbot
0
VCC
VCC
GND
VCC
GND
VCC
CS
Bad example Good example
Figure 59. Timing at power ON/OFF
Figure 60. Rise waveform diagram
（Bad example）CS pin is pulled up to VCC
In this case, CS becomes high (active status), and EEPROM may have malfunction,
mistake write owing to noise and the likes.
Even when CS input is High-Z, the status becomes like this case, which please note.
（Good example）It is low at power ON/OFF.
Set 10ms or higher to recharge at power OFF.
When power is turned on without observing this condition,
IC internal circuit may not be reset, which please note.
Recommended conditions of tR, tOFF, Vbot
tR t
OFF Vbot
10ms or below 10ms or higher 0.3V or below
100ms or below 10ms or higher 0.2V or below
24/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
7)Noise countermeasures
○VCC noise (bypass capacit or)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a by pass capacitor (0.1μF) between IC VCC and GND, At that moment, attach it as close to IC
as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.
○SK noise
When the rise time of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit
displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about
0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or belo w. And it is recommended to set the rise time of
SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the
clock rise, fall time as small as possible.
25/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Operational Notes
(1) Described numeric values and data are design representative values, and the values ar e not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute Maximum Ratings
If the absolute maximum ratings such as supply voltage and operating temperature and s o forth are exceeded, LSI may
be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear
exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the abs olute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any operating conditi on. Make sure that each terminal voltage is not lower than
that of GND terminal in consideration of transition status.
(5) Heat design
In consideration of allo wable loss in actua l use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal short circuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of pin short between LSI terminals and terminals, terminals and power source, terminals and
GND owing to unconnect use, LSI may be destructed.
(7) Using this LSI in a strong electromagnetic field may cause malfunction, therefore, eval uate the design sufficiently.
26/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Part numbering
B R 9 3 G 7 6 x x x －3 x x x
BUS type
93：MicroWire
Operating temperature
/ Operating Voltage
-40℃ to +85℃/ 1.7V to 5.5V
Process code
Pin assignment
Blank: Pin1~8: CS, SK, DI, DO, GND, ORG, DU, VCC respectively
A : Pin1~8: CS, SK, DI, DO, GND, NC, DU, VCC respectively
B : Pin1~8: DU, VCC, CS, SK, DI, DO, GND, NC respectively
76=8K
Capacity
Package
Blank :DIP-T8
F :SOP8
FJ :SOP-J8
FV :SSOP-B8
FVT :TSSOP-B8
FVJ :TSSOP-B8J
FVM :MSOP8
NUX :VSON008X2030
Packaging and forming specification
E2 : Embossed tape and reel
(SOP8,SOP-J8, SSOP-B8,TSSOP-B8, TSSOP-B8J)
TR : Embossed tape and reel
(MSOP8, VSON008X2030)
Blank : Tube
(DIP-T8)
27/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Physical Dimensions Tape and Reel information
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
TubeContainer
Quantity
Direction of feed 2000pcs
Direction of products is fixed in a container tube
(Unit : mm)
DIP-T8
0°−15°
7.62
0.3±0.1
9.3±0.3
6.5±0.3
85
14
0.51Min.
3.4±0.3
3.2±0.2
2.54 0.5±0.1
28/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
SOP8
0.9±0.15
0.3MIN
4
°
+
6
°
−
4
°
0.17 +0.1
-
0.05
0.595
6
43
8
2
5
1
7
5.0±0.2
6.2±0.3
4.4±0.2
(MAX 5.35 include BURR)
1.27
0.11
0.42±0.1
1.5±0.1
S
0.1 S
29/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
SOP-J8
4°+6°
−4°
0.2±0.1
0.45MIN
234
5678
1
4.9±0.2
0.545
3.9±0.2
6.0±0.3
(MAX 5.25 include BURR)
0.42±0.1
1.27
0.175
1.375±0.1
0.1 S
S
30/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
SSOP-B8
0.08 M
0.3MIN
0.65
(0.52)
3.0±0.2
0.15±0.1
(MAX 3.35 include BURR)
S
S
0.1
1234
5678
0.22
6.4±0.3
4.4±0.2
+0.06
−0.04
0.1
1.15±0.1
31/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Direction of feed
Reel ∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
E2
()
1pin
(Unit : mm)
TSSOP-B8
0.08 S
0.08 M
4 ± 4
234
8765
1
1.0±0.05
1PIN MARK
0.525
0.245+0.05
−0.04
0.65
0.145+0.05
−0.03
0.1±0.05
1.2MAX
3.0±0.1
4.4±0.1
6.4±0.2
0.5±0.15
1.0±0.2
(MAX 3.35 include BURR)
S
32/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Direction of feed
Reel ∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
1pin
(Unit : mm)
TSSOP-B8J
0.08 M
0.08 S
S
4 ± 4
(MAX 3.35 include BURR)
578
1234
6
3.0±0.1
1PIN MARK
0.95±0.2
0.65
4.9±0.2
3.0±0.1
0.45±0.15
0.85±0.05
0.145
0.1±0.05
0.32
0.525
1.1MAX
+0.05
−0.03
+0.05
−0.04
33/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Direction of feed
Reel ∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
TR
()
1pin
(Unit : mm)
MSOP8
0.08 S
S
4.0±0.2
8
3
2.8±0.1
1
6
2.9±0.1
0.475
4
57
(MAX 3.25 include BURR)
2
1PIN MARK
0.9MAX
0.75±0.05
0.65
0.08±0.05
0.22 +0.05
−0.04
0.6±0.2
0.29±0.15
0.145 +0.05
−0.03
4°
+6°
−4°
34/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
4000pcs
TR
()
Direction of feed
Reel 1pin
(Unit : mm)
VSON008X2030
5
1
8
4
1.4±0.1
0.25
1.5±0.1
0.5
0.3±0.1
0.25 +0.05
−0.04
C0.25
0.6MAX
(0.12)
0.02+0.03
−0.02 3.0±0.1
2.0±0.1
1PIN MARK
0.08 S
S
35/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Marking Diagrams
DIP-T8 (TOP VIEW)
BR93G76
Part Number Marking
LOT Number
SOP8(TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
SOP-J8(TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
TSSOP-B8(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
TSSOP-B8J(TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
SSOP-B8(TOP VIEW) Part Number Marking
LOT Numbe
r
1PIN MARK
VSON008X2030 (TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
MSOP8(TOP VIEW) Part Number Marking
LOT Numbe
r
1PIN MARK
9G76
9G76 9 G D
9 G 76
9G7
9GD 9G7
6G3
6G3
9G3
36/36
Datasheet
Datasheet
BR93G76-3
www.rohm.com TSZ02201-09190G100070-1-2
07.JAN.2013 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Revision History
Date Revision Changes
07.Jan.2013 001 New Release
Datasheet
Datasheet
Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Datasheet
Datasheet
Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
