IRFRO10/12/14/15 N-CHANNEL IRFU010/12/14/15 POWER MOSFETS FEATURES O PAGK x La) = n Ee xr Lower Ros (on) E- Improved inductive ruggedness in Fast switching times 2 * Rugged polysilicon gate cell structure m Lower input capacitance ru * Extended safe operating area a Improved high temperature reliability oO IRFRO10/012 nd IRFRO14/015 +> re 1-PACK ar pas o PRODUCT SUMMARY Part Number Vos | Ros(on) lo a IRFRO10/U010 50V 0200 8.2A IRFRO12/U012 50V 0300 6.7A a IRFRO14/U014 | 6ov | 0200 8 2A IRFUO10/012 Ll IRFRO15/JU015 60V 0.329 6.7A IRFU014/015 5 \ = = ABSOLUTE MAXIMUM RATINGS 4 Characteristic Symbol IRFRO10 IRFRO12 | IRFRO14 IRFRO15 Unit = IRFU010 IRFU012 IRFUOT4 IRFUO15 = Drain-Source Voltage (1) Voss 50 60 Vde Ee Drain-Gate Voltage (Res=1 OMQ)(1) Vocr 50 60 Vde oO Gate-Source Voltage Ves +20 Vde - Continuous Drain Current To=25C Ip 8.2 6.7 8.2 6.7 Adc Lad Continuous Drain Current Tc=100C Ib 5.2 4.2 5.2 4.2 Adc 3 Drain CurrentPulsed (3) lom 33 27 33 27 Adc = Gate CurrentPulsed lam +1.5 Adc 2 Single Pulsed Avalanche Energy (4) Eas 1.4 mJ << Avalanche Current las 82 A Total Power Dissipation at Tc=25C Pp 25 Watts Derate above 25C 0.20 wie Operating and Storage _ Junction Temperature Range Ty, Tstg 55 to 150 C Maximum Lead Temp. for Soldering T 300 C Purposes, 1/8 from case for 5 seconds L Notes: (1) Ty=25C to 150C (2) Pulse test Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max junction temperature (4) L=50yH, Vag=25V, Re=250, Starting TI=25C a ELECTRONICSbYE D MM 7964342 OO12316 F4b MESMNGK SAMSUNG ELECTRONICS INC IRFRO10/12/14/15 IRFU010/12/14/15 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min| Typ | Max |Units Test Conditions Drain-Source Breakdown Voltage BVoss | IRFRO14/015, IRFU014/015 60 | - Vs] Vas=OV, Ilpb=250pA IRFRO10/012, IRFU010/012 60] - Vv Vasith) | Gate Threshold Voltage 2.0} 4.0 Vs | Vos=Vas, Ip=250pA lass Gate-Source Leakage Forward --|~ 100 | nA | Ves=20V lass | Gate-Source Leakage Reverse | {-100; nA | Ves=-20V Ipss__| Zero Gate Voltage Drain Current | | 250 | vA | Vos=Max. Rating, Ves=OV | |1000 Vpos=0.8 Max Rating, Ves=OV, T.=125C Ipjon) | On-State Drain-Source Current (2) Vos22.4V, Ves=10V IRFRO10/014, IRFU010/014 8.2| - A IRFRO1 2/015, IRFU012/015 6.7] _ Roston | Static Drain-Source IRFRO10/014, IRFU010/014 {0.15/0.20] QF | Vag=10V, Ip=4.2A IRFRO12/015, tRFU012/015 { | 0.30 Ots Forward Transconductance (2) 21] - U | Vos250V, Ip=3.6A Ciss_ | Input Capacitance |358; pF | Vas=0V Coss | Output Capacitance 1134); pF | Vps=25V Crss_| Reverse Transfer Capacitance ; 55 _ pF | f=1.0MHz ta Turn-On Delay Time -|]- 17 ns fen) y Vop=0.5 BVpss, In=7.3A, 20=240 tr __| Rise Time | | 50 | 8 | (MOSFET switching times are essentially taory | Turn-Off Delay Time { 18 ns | independent of operating temperature) te Fall Time |] | 35 | ns QO Total Gate Charge _ |. 10 nc 9 (Gate-Source Plus Gate-Drain) Vas=10V, lp=7.3A, Vos=0 8Max. Rating Qgs_ | Gate-Source Charge _f_ 26/1 nc (Gate charge is essentially independent of operating temperature.) Qga_ | Gate-Drain (Miller) Charge !] | 48 ) nc THERMAL RESISTANCE Riruc Junction-to-Case MAX 5.0 K/W Rtncs Case-to-Sink TYP 1.7 K/W | Mounting surface flat smooth, and greased Rtnua Junction-to-Ambient MAX 110 K/W | Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% {3) Repetitive rating: Pulse width limited by max. junction temperature en ELECTRONICS 281IRFRO10/12/14/15 IRFU010/12/1 4/15 N-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min| Typ | Max [Units Test Conditions ! Continuous Source Current Modified MOSFET 8 (Body Diode) integral reverse IRFRO10/014, IRFU010/014 --| 8.2 A P-N junction {RFRO10/015, IRFUO012/015 -i- 6.7 A rectifier D Isa Pulse Source Current (3) IRFRO10/014, IRFU010/014 | | 33 A G s IRFRO12/015, IRFUO1 2/015 --|- 27 A Vso | Diode Forward Voltage }| {| 1.6 v To=25C, Is=8.2A, Veg=0V tre Reverse Recovery Time | | 190 | ns | T,=28C, lp=7.3A, die/dt=100A/uS Notes: (1) Ty=25C to 150C (2) Pulse test. Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse with limrted by max. junction temperature Ip, DRAIN CURRENT {AMPERES} \p, DRAIN CURRENT (AMPERES) 5 1 1 20 8Ous Pulse Test Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Pulse Test 1 Vps, DRAIN-TO-SOURCE VOLTAGE {VOLTS) Typical Saturation Characteristics 30 ip, DRAIN CURRENT (AMPERES) lo, ORAIN CURRENT (AMPERES) 80us Pulse Test Ti=128C T=25C T=-55C Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics LIMITED BY 10ys 1 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area a ELECTRONICS 282 BYE D MM 7964142 0012317 812 BESMGK SAMSUNG ELECTRONICS INCSAMSUNG ELECTRONICS INC BYE D MM 7964142 0012318 759 MBSMGK IRFRO10/12/14/15 N-CHANNEL IRFU010/12/14/15 POWER MOSFETS o oS dt | 1 Duty Factor Dat t THERMAL IMPEDANCE (PER UNIT) 4 Qo 2 Per Unit Base=Ry=1 67 Deg CW 3 Ta To Poe Zac It) Zeca Rinse, NORMALIZED EFFECTIVE TRANSIENT oa 107 s 10" 2 5 2 5 107 2 5 10" 11. SQUARE WAVE PULSE DURATION (SECONDS) Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration 2 5 1 2 5 10 102 T=125C lon, REVERSE DRAIN CURRENT (AMPERES) Ges, TRANSCONDUCTANCE (SIEMENS) 1 , ip, DRAIN CURRENT (AMPERES) Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage 3 (NORMALIZED) 085 BVoss, ORAIN-TO-SOURCE SREAKDOWN VOLTAGE Rosjon), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resi Vs. T ip @ ELECTRONICSSAMSUNG ELECTRONICS INC BYE D MM 7964R42 0012319 695 MBSMGK INP HRUTUITZIT4I15 N-CHANNEL IRFU010/12/14/15 POWER MOSFETS 1000 Ves=OV f=1MHz Ces=Cos+Cgd Cds Shorted _ Cgs Cgd Coss= Cds + gs? Cod = Cds ~~ - PC ss= Cod C, CAPACITANCE (pF) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) . Qy, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-To-Source Voltage Flos ion DRAIN-TO-SOURCE ON RESISTANCE (OHMS) ip, ORAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C) Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature Pp, POWER DISSIPATION (WATTS) Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve ELECTRONICS