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07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TO-39
TO-92
VN2210
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FET s are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
❏Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
S G D
D G S
Case: DRAIN
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-39 TO-92
100V 0.35Ω8A VN2210N2 VN2210N3
† MIL visual screening available
Ordering Information
Order Number / Package
2
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 1.2A 8.0A 1.0W 125 170 1.2A 8.0A
TO-39 1.7A 10.0A 6.0W 21 125 1.7A 10.0A
*ID (continuous) is limited by max rated Tj.
VN2210
Drain-to-Source
Breakdown Voltage
Electrical Characteristics (@ 25°C unless otherwise specified)
A
Static Drain-to-Source
ON-State Resistance
ns
Thermal Characteristics
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
10V
V
DD
Rgen
0V
0V
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V
ID = 2A
RGEN = 10Ω
Ω
Ω
Symbol Parameter Min Typ Max Unit Conditions
BVDSS 100 V VGS = 0V, ID = 10mA
VGS(th) Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 10mA
∆VGS(th) Change in VGS(th) with Temperature -4.3 -5.5 mV/°CV
GS = VDS, ID = 10mA
IGSS Gate Body Leakage 1 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 50 µAV
GS = 0V, VDS = Max Rating
10 mA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 3 4.5 VGS = 5V, VDS = 25V
817 V
GS = 10V, VDS = 25V
RDS(ON) 0.4 0.5 VGS = 5V, ID = 1A
0.27 0.35 VGS = 10V, ID = 4A
∆RDS(ON) Change in RDS(ON) with Temperature 0.85 1.2 %/°CV
GS = 10V, ID = 4A
GFS Forward Transconductance 1.2 VDS = 25V, ID = 2A
CISS Input Capacitance 300 500
COSS Common Source Output Capacitance 125 200 pF
CRSS Reverse Transfer Capacitance 50 65
td(ON) Turn-ON Delay Time 10 15
trRise Time 10 15
td(OFF) Turn-OFF Delay Time 50 65
tfFall Time 30 50
VSD Diode Forward Voltage Drop 1.0 1.6 V VGS = 0V, ISD = 4A
trr Reverse Recovery Time 500 ns VGS = 0V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
3
Typical Performance Curves
VN2210
Output Characteristics
20
16
12
8
4
0
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
20
16
12
8
4
0
V
DS
(volts)
Maximum Rated Safe Operating Area
0.1 100101
10
1
0.1
0.01
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001 100.01 0.1 1
t
P
(seconds)
Transconductance vs. Drain Current
4.0
3.2
2.4
1.6
0.8
00 1.60.8
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0 15010050
10
8
6
4
2
01257525
T
C
(°C)
P
D
(watts)
TO-92
T
C
= 25°C
P
D
= 1W
TO-92
TO-39
TA = -55°C
VDS = 25V
0102030 5040
4V
3V
0246 108
6V
4V
3V
25°C
150°C
VGS = 10V
6V
8V
8V
VGS = 10V
2.4 4.03.2
TC = 25°C
TO-92 (pulsed) TO-39
(pulsed)
TO-92 (DC)
TO-39 (DC)
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
07/08/02
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
VN2210
Gate Drive Dynamic Characteristics
QG (nanocoulombs)
VGS (volts)
Tj (°C)
GS(th)
V (normalized)
RDS(ON) (normalized)
VDS(ON)GS(th)and R Variation with Temperature
On-Resistance vs. Drain Current
RDS(ON) (ohms)
BVDSS (normalized)
Tj (°C)
Transfer Characteristics
VGS (volts)
ID (amperes)
Capacitance vs. Drain-to-Source Voltage
500
C (picofarads)
VDS (volts)
ID (amperes)
BVDSS Variation with Temperature
010203040
375
250
0
0246810
10
8
6
4
2
0
-50 0 50 100 150
1.1
1.0
1.0
0.8
0.6
0.4
0.2
0
1.2
1.1
1.0
0.9
0.8
0.7
10
8
6
4
2
0246810
-50 0 50 100 150
300 pF
V
DS
= 40V
V
DS
= 10V
V
GS
= 5V
V
GS
= 10V
T
A
= -55°C
V
DS
= 25V
150°C
04812 2016
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
900 pF
2.0
1.6
1.2
0.8
0.4
V
GS(th)
@ 10mA
25°C
125
0
R
DS(ON)
@ 10V, 4A
