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FCPF190N65FL1 N-Channel SuperFET(R) II FRFET(R) MOSFET 650 V, 20.6 A, 190 m Features Description * 700 V @TJ = 150C SuperFET(R) II MOSFET is Fairchild Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET(R) MOSFET's optimized body diode reverse recovery performance can remove additional component and improve system reliability. * RDS(on) = 168 m (Typ.) * Ultra Low Gate Charge (Typ. Qg = 60 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) * 100% Avalanche Tested * RoHS Compliant Applications * LCD / LED / PDP TV * Telecom / Server Power Supplies * Solar Inverter * AC - DC Power Supply D G D S G TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4 A EAR Repetitive Avalanche Energy (Note 1) 0.39 mJ dv/dt Parameter FCPF190N65FL1 650 - DC 20 - AC (f > 1 Hz) - Continuous (TC = 25oC) - Pulsed V 30 20.6 - Continuous (TC = 100oC) A 13.1 (Note 1) 61.8 A (Note 2) 400 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL Unit V - Derate Above 25oC V/ns 50 39 W 0.31 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCPF190N65FL1 RJC Thermal Resistance, Junction to Case, Max. 3.2 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 1 Unit o C/W www.fairchildsemi.com FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET December 2014 Part Number FCPF190N65FL1 Top Mark FCPF190N65F Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25C 650 - - V VGS = 0 V, ID = 10 mA, TJ = 150C 700 - - V - 0.72 - V/oC Off Characteristics BVDSS Drain to Source Breakdown Voltage BVDSS / TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, Referenced to 25oC VDS = 650 V, VGS = 0 V - - 10 VDS = 520 V, VGS = 0 V,TC = 125oC - 60 - VGS = 20 V, VDS = 0 V - - 100 A A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 2 mA 3 - 5 V Static Drain to Source On Resistance - 168 190 m gFS Forward Transconductance VGS = 10 V, ID = 10 A VDS = 20 V, ID = 10 A - 18 - S Dynamic Characteristics - 2350 3055 pF - 77 100 pF - 0.68 - pF - 44 - pF VDS = 0 V to 400 V, VGS = 0 V - 304 - pF VDS = 380 V, ID = 10 A, VGS = 10 V - 60 78 nC - 12 - nC - 25 - nC - 0.6 - - 25 60 ns - 11 32 ns - 62 134 ns - 4.2 18 ns Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance VDS = 100 V, VGS = 0 V, f = 1 MHz (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 10 A, VGS = 10 V, Rg = 4.7 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 61.8 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V trr Reverse Recovery Time - 105 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A, dIF/dt = 100 A/s - 515 - nC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 4 A, RG = 25 , Starting TJ = 25C 3. ISD 10 A, di/dt 200 A/s, VDD 380 V, Starting TJ = 25C 4. Essentially independent of operating temperature. (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 2 www.fairchildsemi.com FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250s Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 o 150 C 10 o 25 C o -55 C *Notes: 1. 250s Pulse Test o 2. TC = 25 C 1 0.3 1 VDS, Drain-Source Voltage[V] 10 1 15 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 100 0.2 VGS = 10V VGS = 20V 0.1 o 10 150 C o 25 C 1 *Notes: 1. VGS = 0V o 0.0 *Note: TC = 25 C 0 14 28 42 ID, Drain Current [A] 56 0.1 0.0 70 Figure 5. Capacitance Characteristics 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 10 VGS, Gate-Source Voltage [V] 10000 Ciss 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 1 2. 250s Pulse Test Figure 6. Gate Charge Characteristics 50000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.3 RDS(ON) [], Drain-Source On-Resistance 3 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 6 4 2 0 1000 3 VDS = 130V VDS = 325V VDS = 520V 8 *Note: ID = 10A 0 13 26 39 52 Qg, Total Gate Charge [nC] 65 www.fairchildsemi.com FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -75 -50 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 Figure 9. Maximum Safe Operating Area 1.0 *Notes: 1. VGS = 10V 2. ID = 10A Figure 10. Maximum Drain Current vs. Case Temperature 25 10s o R JC = 3.2 C/W 20 100s I D, Drain Current [A] ID, Drain Current [A] 1.5 0.5 -75 -50 -25 0 25 50 75 100 125 150 o TJ, Junction Temperature [ C] -25 0 25 50 75 100 125 150 o TJ, Junction Temperature [ C] 200 100 2.0 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 o 15 10 5 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 13.0 EOSS, [J] 10.4 7.8 5.2 2.6 0 0 132 264 396 528 VDS, Drain to Source Voltage [V] (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 660 4 www.fairchildsemi.com FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Typical Performance Characteristics (Continued) FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZJC] 5 0.5 1 0.2 0.1 0.05 0.1 PDM 0.02 0.01 0.01 t1 *Notes: 1E-3 -5 10 (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 t2 o Single pulse 1. ZJC(t) = 3.2 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 5 1 10 www.fairchildsemi.com FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 6 www.fairchildsemi.com FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 7 www.fairchildsemi.com FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Takcheong Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-0A3 (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 8 www.fairchildsemi.com AccuPowerTM AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiCTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficentMaxTM ESBCTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FPSTM F-PFSTM FRFET(R) Global Power ResourceSM GreenBridgeTM Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM Marking Small Speakers Sound Louder and BetterTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R)* (R) tm PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM Solutions for Your SuccessTM SPM(R) STEALTHTM SuperFET(R) SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM TinyBoost(R) (R) TinyBuck TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TranSiCTM TriFault DetectTM TRUECURRENT(R)* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM VoltagePlusTM XSTM XsensTM TM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I73 (c)2014 Fairchild Semiconductor Corporation FCPF190N65FL1 Rev. C1 9 www.fairchildsemi.com FCPF190N65FL1 -- N-Channel SuperFET(R) II FRFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 10.30 9.80 A 2.90 2.50 3.40 3.00 6.60 6.20 3.00 2.60 B 1 X 45 19.00 17.70 B 15.70 15.00 3.30 2.70 B 1 2.14 10.70 10.30 1.20 1.00 3 2.70 2.30 1.20 0.90 (2X) 0.90 (3X) 0.50 0.50 M 2.74 (2X) 2.34 B 0.60 0.40 A NOTES: 4.60 4.30 A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. 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