© 2010 IXYS CORPORATION, All Rights Reserved DS100216B(06/10)
VDSS = 500V
ID25 = 24A
RDS(on) ≤≤
≤≤
≤ 270mΩΩ
ΩΩ
Ω
trr(typ) = 400ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C24A
IDM TC= 25°C, Pulse Width Limited by TJM 50 A
IATC= 25°C12A
EAS TC= 25°C 750 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PD TC= 25°C 480 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force TO-263 10..65 / 2.2..14.6 Nm/lb.in.
MdMounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
IXTA460P2
IXTP460P2
IXTQ460P2
IXTH460P2
PolarP2TM
Power MOSFET
Features
zAvalanche Rated
zFast Intrinsic Diode
zDynamic dv/dt Rated
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
G = Gate D = Drain
S = Source Tab = Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ± 30V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS= 0V 25 μA
TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 270 mΩ
GDS
TO-220AB (IXTP)
D (Tab)
TO-3P (IXTQ)
D
G
S
D (Tab)
TO-247 (IXTH)
G
SD (Tab)
D
TO-263 AA (IXTA)
G
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 14 24 S
Ciss 2890 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 280 pF
Crss 22 pF
td(on) 15 ns
tr 9 ns
td(off) 30 ns
tf 5 ns
Qg(on) 48 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 13 nC
Qgd 16 nC
RthJC 0.26 °C/W
RthCS TO-220 0.50 °C/W
RthCS TO-3P & TO-247 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 24 A
ISM Repetitive, Pulse Width Limited by TJM 96 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 400 ns
IRM 19.6 A
QRM 3.9 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
IF = 12A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
© 2010 IXYS CORPORATION, All Rights Reserved
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 (IXTP) Outline
TO-3P (IXTQ) Outline
TO-263 (IXTA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom
Side
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
012345678
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 10V
7V
5
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6
V
5
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
0 5 10 15 20
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5
V
4V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 12A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 24A
I
D
= 12A
Fig. 5. R
DS(on)
Normalized to I
D
= 12A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 5 10 15 20 25 30 35 40 45 50 55
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxim u m Drain Current vs.
Case Temper atu r e
0
4
8
12
16
20
24
28
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
Fig. 7. Input Admi ttance
0
5
10
15
20
25
30
35
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- V olts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig . 8. Tr ansco nd ucta n ce
0
10
20
30
40
50
0 5 10 15 20 25 30 35
I
D
- Amp eres
g
f s
- Siemen s
T
J
= - 40ºC
125ºC
25ºC
Fig . 9. F o r w ar d Vo ltage D ro p o f I n tr i nsi c Di od e
0
10
20
30
40
50
60
70
80
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volt s
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 12A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoF arads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
IXYS REF: T_460P2(57)6-03-10-A
Fig. 13. Maximum Transient Thermal Im pedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
Z
(th)JC
- ºC / W
