1HP04CH Ordering number : ENA0926 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 1HP04CH General-Purpose Switching Device Applications Features * 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 Gate-to-Source Voltage VGSS 20 V ID --80 mA --320 mA Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD Channel Temperature Storage Temperature PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) V 0.6 W Tch 150 C Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0V VDS=--100V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=--100A VDS=--10V, ID=--40mA Ratings min typ Unit max --100 V --1.2 85 --1 A 10 A --2.6 145 V mS ID=--40mA, VGS=--10V ID=--20mA, VGS=--4V 13.5 18 15 21 Input Capacitance Ciss VDS=--20V, f=1MHz 14.5 pF Output Capacitance Coss VDS=--20V, f=1MHz 2.5 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 1.0 pF Marking : WB Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82907PE TI IM TC-00000808 No. A0926-1/4 1HP04CH Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 34 ns Rise Time tr td(off) See specified Test Circuit. 28 ns See specified Test Circuit. 490 ns tf See specified Test Circuit. 160 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg nC Qgs VDS=--50V, VGS=--10V, ID=--80mA VDS=--50V, VGS=--10V, ID=--80mA 1.7 Gate-to-Source Charge 0.42 nC Gate-to-Drain "Miller" Charge Qgd VDS=--50V, VGS=--10V, ID=--80mA 0.20 Diode Forward Voltage VSD IS=--80mA, VGS=0V Package Dimensions nC --0.84 --1.2 V Switching Time Test Circuit unit : mm (typ) 7015A-004 VDD= --50V VIN 0.6 2.9 0V --10V 0.15 3 0.2 1.6 0.6 2.8 D 0.05 1 ID= --40mA RL=1250 VOUT VIN PW=10s D.C.1% Rg G 2 0.95 1 : Gate 2 : Source 3 : Drain 1HP04CH P.G 50 S 0.9 0.2 0.4 SANYO : CPH3 Rg=5k ID -- VDS VDS= --10V V .0 --140 --2.5 V GS= 0V . --5 --40 --30 --100 --80 --60 --40 --20 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 0 --2.0 30 25 20 --40mA 15 ID= --20mA 10 5 0 --2 --4 --6 --8 --10 --12 Gate-to-Source Voltage, VGS -- V --14 --16 IT12912 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT12911 RDS(on) -- Ta 40 Static Drain-to-Source On-State Resistance, RDS(on) -- 35 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25C 0 --0.5 IT12910 RDS(on) -- VGS 40 Static Drain-to-Source On-State Resistance, RDS(on) -- Ta =7 5 --10 --25 C C --20 --120 25 C --3 Drain Current, ID -- mA .0V --4 --1 0 --50 ID -- VGS --160 V .0V --60 --1 5 Drain Current, ID -- mA --70 --8 .0V .0V --80 35 30 25 = -V, I D 20 20m A 4 mA = ---40 = V GS , ID 10V = -S VG 15 10 5 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT12913 No. A0926-2/4 1HP04CH yfs -- ID 3 = Ta 2 --2 C 25 C 5 7 10 7 5 --10 7 5 3 2 --1.0 7 5 3 3 2 2 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --0.1 --0.2 5 7 --100 --0.4 --0.8 --1.0 --1.2 --1.4 IT12915 Ciss, Coss, Crss -- VDS 5 VDD= --50V VGS= --10V 3 --0.6 Diode Forward Voltage, VSD -- V IT12914 SW Time -- ID 7 5 f=1MHz 3 Ciss 2 1000 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 25C --25 C C 5 3 --100 7 5 Ta= 75C 100 7 5 Drain Current, ID -- mA td(off) tf 3 2 100 7 5 td(on) 10 7 5 3 Coss 2 1.0 3 tr 2 2 3 5 7 2 --10 3 5 7 0 --100 IT12916 Drain Current, ID -- mA 7 5 VDS= --50V ID= --80mA --9 --10 --20 --30 --40 --50 --60 --70 3 n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Total Gate Charge, Qg -- nC 2.0 IT12918 PD -- Ta 0.7 ) C 25 Operation in this area is limited by RDS(on). a= (T Drain Current, ID -- A io 2 0 s 2 3 --1 100s s at er --2 m 0m 3 --0.01 7 5 --3 s 1m ID= --80mA op --4 10 10 C --5 --100 IT12917 PW10s IDP= --320mA D --6 --0.1 7 5 --90 ASO 2 --8 --7 --80 Drain-to-Source Voltage, VDS -- V VGS -- Qg --10 Crss 7 5 10 --1.0 Gate-to-Source Voltage, VGS -- V VGS=0V 3 2 2 1.0 --0.1 Allowable Power Dissipation, PD -- W IS -- VSD 5 VDS= --10V Source Current, IS -- mA Forward Transfer Admittance, yfs -- mS 5 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) --0.001 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2 3 IT12919 Drain-to-Source Voltage, VDS -- V 0.6 M ou nt 0.5 ed on ac er 0.4 am ic bo ar 0.3 d (9 00 m 0.2 m2 0. 0 8m m 0.1 ) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT12909 No. A0926-3/4 1HP04CH Note on usage : Since the 1HP04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No. A0926-4/4