140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * Silicon NPN, To-72 packaged VHF/UHF Transistor * Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, * 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 * 1 Power Gain, GPE = 19 dB (typ) @ 200 MHz 3 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO Parameter Collector-Emitter Voltage Value 15 Unit Vdc VCBO VEBO Collector-Base Voltage 30 Vdc Emitter-Base Voltage 2.5 Vdc IC Collector Current 50 mA 200 1.14 mWatts mW/ C Thermal Data P D Total Device Dissipation @ TA = 25 C Derate above 25 C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFY90 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCEO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Value Unit Min. Typ. Max. 15 - - Vdc - - 10 nA 20 - 125 - (on) HFE DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) DYNAMIC Symbol fT NFmin Cibo Test Conditions Current-Gain - Bandwidth Product (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) Value Unit Min. Typ. Max. 1.3 - - GHz - 2.5 5.0 dB - - 2.0 pF (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFY90 FUNCTIONAL Symbol G U max MSG 2 |S21| Value Test Conditions Maximum Unilateral Gain (1) Maximum Stable Gain Insertion Gain Unit Min. Typ. Max. IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz - 20 - dB IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz - 22 - dB IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz 15 16 - dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 8 mA f S11 S21 S12 S22 (MHz) |S11| |S21| |S12| |S22| 100 .574 -79 10.65 127 .023 67 .788 -56 200 .374 -130 7.01 105 .036 60 .682 -97 300 .292 -172 4.44 97 .047 66 .654 -136 400 .259 142 3.62 92 .063 63 .640 -178 500 .221 96 3.02 88 .072 60 .617 140 600 .198 53 2.57 80 .082 58 .614 98 700 .185 8.8 2.08 76 .087 58 .611 55 800 .187 -38 1.90 76 .104 58 .621 10 900 .185 -91 1.79 72 .117 50 .620 -35 1000 .177 -136 1.70 61 .118 44 .632 -78 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFY90 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.