Semicustom Products
UT0.6µ Gate Array Family
Data Sheet
Jan. 2000
FEATURES
qMultiple gate array sizes up to 600,000 usable equivalent
gates
qToggle rates up to 215 MHz
qAdvanced 0.6µ (0.5µLeff) silicon gate CMOS processed
in a commercial fab
qOperating voltage of 5V and 3.3V
qMultiple product assurance levels available, i.e. QML,
military, industrial, etc.
qDesigned specifically for high reliability applications
q JTAG (IEEE 1149.1) boundary-scan supported
qExtensive package offerings including PQFP, CQFP, PGA
and BGA
qDesign support using Mentor Graphics®, and Synop-
sysTM in VHDL or Verilog design languages on HP®, NT
and Sun® workstationsqSupports cold sparing for low
power down applications
qSupports voltage translation
- 5V bus to 3.3V bus
- 3.3V bus to 5V bus
PRODUCT DESCRIPTION
The high-performance UT0.6µ gate array family features den-
sities up to 600,000 equivalent gates and is available in
multiple product assurance levels such as QML, military and
industrial grades.
The UT0.6µ gate array family silicon is fabricated at American
Microsystems Incorporated (AMI). Developed using
UTMC’s patented architectures, the UT0.6µ array family uses
a highly efficient continuous column transistor architecture
for the internal cell construction. Combined with state-of-the-
art placement and routing tools, the utilization of available
transistors is maximized using three levels of metal
interconnect.
The UT0.6µ family of gate arrays is supported by an extensive
cell library that includes SSI, MSI, and 54XX equivalent func-
tions, as well as, configurable RAM and other cores. UTMC’s
core library includes the following functions:
Intel 80C31® equivalent
Intel 80C196® equivalent
MIL-STD-1553 functions (BRCTM, RTI, RTMP)
MIL-STD-1750 microprocessor
RISC microcontroller
Configurable RAM
2
Table 1. Gate Densities
Notes:
1.Based on NAND2 equivalents. Actual usable gate count is design-dependent. Estimates reflect a mix of functions including RAM.
2.Includes five pins that may or may not be reserved for JTAG boundary-scan, depending on user requirements.
3.Reserved for dedicated VDD/VSS and VDDQ/VSSQ.
Low-noise Device and Package Solutions
The UT0.6µ array family’s output drivers feature programmable
slew rate control for minimizing noise and switching transients.
This feature allows the user to optimize edge characteristics to
match system requirements. Separate on-chip power and ground
buses are provided for internal cells and output drivers which
further isolate internal design circuitry from switching noise.
In addition, UTMC offers advanced low-noise package technol-
ogy with multi-layer, co-fired ceramic construction featuring
built-in isolated power and ground planes. These planes provide
lower overall resistance/inductance through power and ground-
paths which minimize voltage drops during periods of heavy
switching.
UTMC’s CQFP packages feature a non-conductive tie bar that
helps maintain lead integrity through test and handling opera-
tions. PQFP packages are available for applications that require
plastic for automatic insertion, weight and cost considerations.
For high pin count applications, a full line of PGA and BGA
packages are available.
In addition to the packages listed in Table 2, UTMC offers custom
package development and package tooling modification services
for individual requirements.
DEVICE PART NUMBERS EQUIVALENT USABLE GATES1SIGNAL I/O2POWER & GROUND PADS3
UT25 3,400 - 25,000 177 40
UT50 50,000 177 40
UT75 75,000 259 86
UT100 100,000 259 86
UT150 150,000 259 86
UT200 200,000 400 152
UT250 250,000 400 152
UT300 300,000 400 152
UT350 350,000 450 170
UT400 400,000 450 170
UT450 450,000 450 170
UT500 500,000 450 170
UT550 550,000 450 170
UT600 600,000 450 170
3
Table 2. Packages
Notes:
1. The number of device I/O pads available may be restricted by the selected package.
2. PGA packages have one additional non-connected index pin (i.e., 84 + 1 index pin = 85 total package pins for the 85 PGA).
Contact UTMC for specific package drawings.
PACKAGE
TYPE/
LEADCOUNT1
UT25 UT50 UT75 UT100 UT150 UT200 UT250 UT300 UT350 UT400 UT450 UT500 UT550 UT600
CQFP
68 X X
84 X X
132 XXXXX
172 XXXXXXXX
196 XXXXXXXX
224 XXXXXX
256 XXXXXXXXXXXX
304 XXXXXXXXXXXX
340 XXXXXXXXX
PQFP
128 X X
144 X X
160 XXXXX
208 XXXXXXXX
PGA2
84 X X
120 XXXXX
209 XXXXX
281 XXXXXXXXXXXX
299 XXXXXXXXXXXX
447 XXXXXXXXX
BGA
352 XXXXXXXXXXXX
456 XXXXXXXXX
512 XXXX
4
Extensive Cell Library
The UT0.6µ family of gate arrays is supported by an extensive
cell library that includes SSI, MSI, and 54XX-equivalent func-
tions, as well as, RAM and other library functions. User-
selectable options for cell configurations include scan for all reg-
ister elements, as well as output drive strength. UTMC’s core
library includes the following functions:
Intel® 80C31 equivalent
Intel® 80C196 equivalent
MIL-STD-1553 functions (BCRTM, RTI, RTMP)
MIL-STD-1750 microprocessor
Standard microprocessor peripheral functions
Configurable RAM
RISC Microcontroller
Refer to UTMC’s UT0.6µ Design Manual for complete cell list-
ing and details.
I/O Buffers
The UT0.6µ gate array family offers up to 442 signal I/O loca-
tions (note: device signal I/O availability is affected by package
selection and pinout.) The I/O cells can be configured by the user
to serve as input, output, bidirectional, three-state, or additional
power and ground pads. Output drive options range from 2 to
16mA. To drive larger off-chip loads, output drivers may be com-
bined in parallel to provide additional drive up to 32mA.
Other I/O buffer features and options include:
Slew rate control
Pull-up and pull-down resistors
TTL, CMOS, and Schmitt levels
Cold sparing
Voltage translation
- 5V bus to 3.3V bus
- 3.3V bus to 5V bus
JTAG Boundary-Scan
The UT0.6µ arrays provide for a test access port and boundary-
scan that conforms to the IEEE Standard 1149.1 (JTAG). Some
of the benefits this capability offers include the following:
Allows easy test of complex assembled printed circuit
boards
Can be used to gain access to and control internal
scan paths
Can be used to initiate Built-In Self Test
Clock Driver Distribution
UTMC design tools provide methods for balanced clock distri-
bution that maximize drive capability and minimize relative
clock skew between clocked devices.
Speed and Performance
UTMC specializes in high-performance circuits designed to op-
erate in high reliability environments. Table 3 presents a
sampling of typical cell delays.
Note that the propagation delay for a CMOS device is a function
of its fanout loading, supply voltage, operating temperature, and
processing tolerance. The UT0.6µ array family simulation mod-
els account for all of these effects to accurately determine circuit
performance for its particular set of use conditions.
Power Dissipation
Each internal gate or I/O driver has an average power consump-
tion based on its switching frequency and capacitive loading. For
a rigorous power estimating methodology, refer to the UTMC
UT0.6µ Design Manual or consult with a UTMC Applications
Engineer.
Typical Power Dissipation
1.1µW/Gate-MHz@5.0V 0.4µW/Gate-MHz@3.3V
5
Table 3. Typical Cell Delays
Note:
1. All specifications in ns (typical). Output load capacitance is 50pF. Fanout loading for input buffers and gates is the equivalent of two gate input loads.
CELL OUTPUT
TRANSITION PROPAGATION
DELAY 1
Internal Gates VDD = 5.0V VDD = 3.3V
INV1, Inverter HL .19 .26
LH .30 .40
INV4, Inverter 4X HL .10 .11
LH .199 .24
NAND2, 2-Input NAND HL .29 .38
LH .30 .40
NOR2, 2-Input NOR HL .18 .27
LH .44 .62
DFF - CLK to Q HL 1.23 1.73
LH 1.13 1.65
Latch - CLK to Q HL 1.18 1.70
LH .91 1.29
Output Buffers
OC5050N4, CMOS HL 2.45 2.90
LH 2.06 4.20
OT5050N4, TTL, 4mA HL 5.45 6.52
LH 4.42 7.94
OT5050N12, TTL, 12mA HL 4.35 5.87
LH 3.36 5.66
Input Buffers
IC5050, CMOS HL .66 .93
LH .46 .73
IC5050, TTL HL .88 1.73
LH .71 1.63
6
ASIC DESIGN SOFTWARE
Using a combination of state-of-the-art third-party and
proprietary design tools, UTMC delivers the CAE support and
capability to handle complex, high-performance ASIC designs
from design concept through design verification and test.
UTMC’s flexible circuit creation methodology supports high
level design by providing UT0.6µ libraries for Mentor
Graphics and Synopsys synthesis tools. Design verification is
performed in the Mentor Graphics environment or with any
VHDL VITAL-compliant simulator using UTMC’s robust
libraries. UTMC also supports Automatic Test Program
Generation to improve design testing.
UTMC MENTOR GRAPHICS DESIGN SYSTEM
The UTMC Mentor Graphics Design System software is fully
integrated into the Mentor Graphics design environment,
making it familiar and easy to use. UTMC tools support Mentor
functions such as cross-highlighting, graphical menus, and
design navigation.
After creating a design in the Mentor Graphics environment,
you can easily verify the design for electrical rules compliance
with the UTMC Logic Rules Checker. Testability can be
verified with the UTMC Tester Rules Checker. Both of these
tools are fully integrated into the Mentor Graphics
Environment.
When you have completed all design activities, UTMC’s
Design Transfer tool captures all the required files and prepares
them for easy transfer to UTMC. UTMC uses this data to
convert your design into a packaged and tested device.
ADVANTAGES OF THE UTMC MENTOR DESIGN
SYSTEM
The UTMC Mentor Graphics Design System is among the
most powerful and respected tool systems in the industry.
UTMC customers have successfully used the UTMC
Mentor Graphics Design System for over 5 years.
UTMC’s Logic and Tester Rules Checker tools allow you
to verify partial or complete designs for compliance with
UTMC manufacturing practices and procedures.
The Design System accepts pre-and post-layout timing
information to ensure your design results in devices that
meet your specifications.
The Design System supports Autologic II, and database
transfer between Synopsys and Mentor.
The Design System supports powerful Mentor Graphics
ATPG capabilities.
Design
Manufacturing
UTMC Mentor
Design System
Translate an
External
Design
Convert an
FPGA Schematic
Entry
Synthesis
Design Idea
UTMC Mentor Graphics Design Flow
7
UTMC VHDL DESIGN SYSTEM
The UTMC VHDL Design System provides VITAL- compliant
sign-off quality libraries. You can use these libraries to verify
an ASIC design you have created in most popular VHDL
design environments.
With the library capabilities UTMC provides, you can use High
Level Design methods to synthesize your design for simulation.
UTMC also provides tools to verify that your VHDL design
can be manufactured at UTMC - completely in your VHDL
environment.
ADVANTAGES OF THE UTMC VHDL DESIGN
SYSTEM
The UTMC VHDL Design System gives you the freedom
to use tools from Synopsys, Mentor Graphics, Cadence,
Viewlogic, and other VHDL VITAL-compliant vendors to
help you synthesize and simulate a design in VHDL.
UTMC’s Logic and Tester Rules Checker allow you to
verify partial or complete designs for compliance with
UTMC manufacturing rules.
The Design System accepts back-annotation of timing
information through SDF.
Your design stays entirely within VHDL, preventing
conversion problems and issues.
XDTsm (eXternal Design Translation)
Through UTMC’s XDT services, customers can convert an
existing non-UTMC design to UTMC’s processes. The XDT
tool is particularly useful for converting an FPGA to a UTMC
gate array. The XDT translation tools convert industry standard
netlist formats and vendor libraries to UTMC formats and
libraries. Industry standard netlist formats supported by UTMC
include:
VHDL
Verilog HDLTM
FPGA source files (Actel, Altera, Xilinx)
EDIF
Third-party netlists supported by Synopsys
TOOLS SUPPORTED BY UTMC
TRAINING AND SUPPORT
Qualified UTMC instructors conduct training classes tailored to
meet individual needs. These classes can address a wide mix of
engineering backgrounds and specific customer concerns.
Applications assistance is also available through all phases of
ASIC Design.
Mentor
QuickHDL
VHDL Tool
Supplier
Design
Manufacturing
Cadence
Leapfrog Viewlogic
Vantage
Synopsys
VSS
High Level Design Activities
UTMC VHDL
Design System
UTMC VHDL Design Flow
Mentor Graphics Synopsys VHDL
Autologic II®Design
CompilerTM Synopsys
VSSTM
QuickSimII®VHDL
CompilerTM Mentor
Graphics
QuickHDL
QuickfaultII®TestSimTM Cadence
Leapfrog
QuickGradeII®Verilog HDL
CompilerTM Viewlogic
VantageTM
FastScan / Flextest /
DFTAdvisor®Test Compiler
PlusTM Any VITAL-
compliant
VHDL Tool
8
PHYSICAL DESIGN
Using three layers of metal interconnect, UTMC achieves
optimized layouts that maximize speed of critical nets, overall
chip performance, and design density up to 600,000 equivalent
gates.
Test Capability
UTMC supports all phases of test development from test stimulus
generation through high-speed production test. This support in-
cludes ATPG, fault simulation, and fault grading. Scan design
options are available on all UT0.6µ storage elements. Automatic
test program development capabilities handle large vector sets
for use with UTMC’s LTX/Trillium MicroMasters, supporting
high-speed testing (up to 80MHz with pin multiplexing).
Unparalleled Quality and Reliability
UTMC is dedicated to meeting the stringent performance re-
quirements of avionics and defense systems suppliers. UTMC
maintains the highest level of quality and reliability through our
Quality Management Program under MIL-PRF-38535 and ISO-
9001. In 1988, we were the first gate array manufacturer to
achieve QPL certification and qualification of our technology
families. Our product assurance program has kept pace with the
demands of certification and qualification.
Our quality management plan includes the following activities
and initiatives.
Quality improvement plan
Failure analysis program
SPC plan
Corrective action plan
Change control program
Standard Evaluation Circuit (SEC) and Technology Charac-
terization Vehicle (TCV) assessment program
Certification and qualification program
Because of numerous product variations permitted with customer
specific designs, much of the reliability testing is performed us-
ing a Standard Evaluation Circuit (SEC) and Technology
Characterization Vehicle (TCV). The TCV utilizes test structures
to evaluate hot carrier aging, electromigration, and time depen-
dent test samples for reliability testing. Data from the wafer-level
testing can provide rapid feedback to the fabrication process, as
well as establish the reliability performance of the product before
it is packaged and shipped.
9
ABSOLUTE MAXIMUM RATINGS 1
(Referenced to VSS)
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation
of the device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMITS
VDD DC supply voltage -0.3 to 6.0V
VI/O Voltage on any pin -0.3V to VDD + 0.3
TSTG Storage temperature -65 to +150°C
TJMaximum junction temperature +175°C
ILU Latchup immunity +150mA
IIDC input current +10mA
TLS Lead temperature (soldering 5 sec) +300°C
SYMBOL PARAMETER LIMITS
VDD Positive supply voltage 3.0 to 5.5V
TCCase temperature range -55 to +125C
VIN DC input voltage 0V to VDD
10
DC ELECTRICAL CHARACTERISTICS
(VDD = 5.0V +10%; -55°C < TC < +125°C)
SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT
VIL Low-level input voltage 1
TTL inputs
CMOS, OSC inputs
0.8
.3VDD
V
VIH High-level input voltage 1
TTL inputs
CMOS, OSC inputs
2.2
.7VDD
V
VT+Schmitt Trigger, positive going 1 threshold 4.0 V
VT-Schmitt Trigger, negative going 1 threshold 1.0 V
VHSchmitt Trigger, typical range of hysteresis 21.5 2.0 V
IIN Input leakage current
TTL, CMOS, and Schmitt inputs
Inputs with pull-down resistors
Inputs with pull-down resistors, OSC
Inputs with pull-up resistors
Inputs with pull-up resistors, OSC
VIN = VDD or VSS
VIN = VDD
VIN = VSS
VIN = VSS
VIN = VDD
-1
+150
-10
-900
-10
1
+900
+10
-150
+10
µA
VOL Low-level output voltage 3
TTL half-drive buffer
TTL single-drive buffer
TTL double-drive buffer
TTL triple-drive buffer *
CMOS outputs
CMOS outputs (optional)
OSC outputs
IOL = 2.0mA
IOL = 4.0mA
IOL = 8.0mA
IOL = 12.0mA
IOL = 1.0µA
IOL = 100µA
IOL = 100µA
0.4
0.4
0.4
0.4
0.05
0.25
1.0
V
VOH High-level output voltage 3
TTL half-drive buffer
TTL single-drive buffer
TTL double-drive buffer
TTL triple-drive buffer *
CMOS outputs
CMOS outputs (optional)
OSC outputs
IOH = -2.0mA
IOH = -4.0mA
IOH = -8.0mA
IOH = -12.0mA
IOH = -1.0µA
IOH = -100µA
IOH = -100µA
2.4
2.4
2.4
2.4
VDD-0.05
VDD-0.25
3.5
V
11
Notes:
* Contact UTMC prior to usage.
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%;
VIL = VIL(max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage
within the above specified range, but are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density < 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not
exceed 3,765pF*MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT
IOZ Three-state output leakage current
TTL half-drive buffer
TTL single-drive, CMOS, OSC buffers
TTL double-drive buffer
TTL triple-drive buffer *
VO = VDD and
VSS -5
-10
-20
-30
5
10
20
30
µA
IOS Short-circuit output current 2 ,4
TTL half-drive buffer
TTL single-drive, CMOS, OSC buffers
TTL double-drive buffer
TTL triple-drive buffer *
VO = VDD and
VSS -50
-100
-200
-300
50
100
200
300
mA
IDDQ Quiescent Supply Current VDD = 5.5V 1mA
CIN Input capacitance 5ƒ = 1MHz @ 0V 12 pF
COUT Output capacitance 5
TTL half-drive buffer
TTL single-drive, CMOS, OSC buffers
TTL double-drive buffer
TTL triple-drive buffer *
ƒ = 1MHz @ 0V 11
12
14
22
pF
CIO Bidirect I/O capacitance 5
TTL single-drive, CMOS, OSC buffers
TTL double-drive buffer
TTL triple-drive buffer *
ƒ = 1MHz @ 0V 13
15
23
pF
12
DC ELECTRICAL CHARACTERISTICS
(VDD = 3.3V +.3V; -55°C < TC < +125°C)
SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT
VIL Low-level input voltage 1
TTL inputs
CMOS, OSC inputs
0.8
.3VDD
V
VIH High-level input voltage 1
TTL inputs
CMOS, OSC inputs
2.2
.7VDD
V
VT+Schmitt Trigger, positive going 1 threshold 2.2 V
VT-Schmitt Trigger, negative going 1 threshold .5 V
VHSchmitt Trigger, typical range of hysteresis 2.4 1.0 V
IIN Input leakage current
TTL, CMOS, and Schmitt inputs
Inputs with pull-down resistors
Inputs with pull-down resistors, OSC
Inputs with pull-up resistors
Inputs with pull-up resistors, OSC
VIN = VDD or VSS
VIN = VDD
VIN = VSS
VIN = VSS
VIN = VDD
-1
+100
-10
-700
-10
1
+700
+10
-100
+10
µA
VOL Low-level output voltage 3
TTL half-drive buffer
TTL single-drive buffer
TTL double-drive buffer
TTL triple-drive buffer *
CMOS outputs
CMOS outputs (optional)
OSC outputs
IOL = 1.4mA
IOL = 2.8mA
IOL = 5.6mA
IOL = 8.4mA
IOL = 1.0µA
IOL = 100µA
IOL = 100µA
0.4
0.4
0.4
0.4
0.05
0.25
1.0
V
VOH High-level output voltage 3
TTL half-drive buffer
TTL single-drive buffer
TTL double-drive buffer
TTL triple-drive buffer *
CMOS outputs
CMOS outputs (optional)
OSC outputs
IOH = -1.4mA
IOH = -2.8mA
IOH = -5.6mA
IOH = -8.4mA
IOH = -1.0µA
IOH = -100µA
IOH = -100µA
2.4
2.4
2.4
2.4
VDD-0.05
VDD-0.25
2.0
V
13
Notes:
* Contact UTMC prior to usage.
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%;
VIL = VIL(max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage
within the above specified range, but are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density < 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not
exceed 3,765pF*MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT
IOZ Three-state output leakage current
TTL half-drive buffer
TTL single-drive, CMOS, OSC buffers
TTL double-drive buffer
TTL triple-drive buffer *
VO = VDD and
VSS -5
-10
-20
-30
5
10
20
30
µA
IOS Short-circuit output current 2 ,4
TTL half-drive buffer
TTL single-drive, CMOS, OSC buffers
TTL double-drive buffer
TTL triple-drive buffer *
VO = VDD and
VSS -50
-100
-200
-300
50
100
200
300
mA
IDDQ Quiescent Supply Current VDD = 3.6V 1mA
CIN Input capacitance 5ƒ = 1MHz @ 0V 12 pF
COUT Output capacitance 5
TTL half-drive buffer
TTL single-drive, CMOS, OSC buffers
TTL double-drive buffer
TTL triple-drive buffer *
ƒ = 1MHz @ 0V 11
12
14
22
pF
CIO Bidirect I/O capacitance 5
TTL single-drive, CMOS, OSC buffers
TTL double-drive buffer
TTL triple-drive buffer *
ƒ = 1MHz @ 0V 13
15
23
pF
14
HP/Apollo and HP-UX are registered trademarks of Hewlett-Packard, Inc.
Intel is a registered trademark of Intel Corporation
Mentor, Mentor Graphics, AutoLogic II, QuickSim II, QuickFault II, QuickHDL, QuickGrade II, FastScan, FlexTest and DFT Advisor are registered
trademarks of Mentor Graphics Corporation
Sun is a registered trademark of Sun Microsystems, Inc.
Verilog and Leapfrog are registered trademarks of Cadence Design Systems, Inc.
Synopsys, Design Compiler, Test Compiler Plus, VHDL Compiler, Verilog HDL Compiler, TestSim and VSS are trademarks of Synopsys, Inc.
Vantage is a trademark of Viewlogic
15
Notes