SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PWB200AA
THYRISTOR MODULE
108
18
3
34
30max 13
21
93±0.3
2-φ6.5
3-M6
6-♯110TAB
262620.5
NAMEPLATE
UnitA
Symbol Item Conditions Ratings
200
Unit
ITAVAverage On-State Current
ITRMSR.M.S. On-State Current
Single phase, half wave, 180°conduction, Tc121
Single phase, half wave, 180°conduction, Tc121
ITSM Surge On-State Current
I2t I2t
PGM
Peak Gate Power Dissipation
PGAV
Average Gate Power Dissipation
IFGM Peak Gate Current
VFGM Peak Gate VoltageForward
1
2cycle, 50Hz/60Hz, peak value, non-reqetitive
A
314 A
5400/6000 A
1499400
10 A2S
W
1
VRGM Peak Gate VoltageReverse
di/dt
Critical Rate of Rise of On-State Current
Tj
Operating Junction Temperature
Tstg Storage Temperature
Mounting
torque
Mass
MountingM6
TerminalM6
I
G
200mATj25℃,V
D
1
2
V
DRM
dI
G
/
dt1A
/
μs
Recommended Value 2.5-3.925-40
Recommended Value 2.5-3.925-40
3W
A
10 V
5 V
50 A/μs
40 to 150
40 to 125
4.748
4.748
280
N・m
(㎏fB
g
Symbol Item Conditions Ratings
60
Unit
IDRM
Repetitive Peak Off-State Current, max.
IRRM
Repetitive Peak Reverse Current, max.
at VDRM, Single phase, half wave, Tj150
at VDRM, Single phase, half wave, Tj150
VTM
Peak On-State Voltage, max.
IGT Gate Trigger Current, max.
VGD
Non-Trigger Gate, Voltage. min.
tgt Turn On Time, max.
dv/dt
Critical Rate of Rise of Off-State Voltage, min.
IHHolding Current, typ.
On-State Current 630A, Tj25Inst. measurement
Tj25℃,IT1AVD6V
mA
60 mA
1.20 V
150
Tj150℃,VD
1
2
VDRM
IT200AIG200mATj25℃,
VD
1
2
VDRMdIG/dt1A/μs
0.25
mA
VGT Gate Trigger Voltage, max. Tj25℃,IT1AVD6V 2 V
V
10
Tj150℃,VD2
3VDRMExponential wave.
Tj25
Rthj-cThermal Impedance, max. Junction to case1
3Module
200
μs
V/μs
70 mA
0.12 /W
Electrical Characteristics
Maximum Ratings
Symbol Item PWB200AA30
Ratings Unit
VRRM
Repetitive Peak Reverse Voltage
300 V
360 V
300
PWB200AA40
400
480
400 V
VRSM
VDRM
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
A
G3
K3
K3
321
K2 K2
G1
G2
K1
K1
PWB200AA is a Thyristor module suitable for low voltage, 3 phase recifier applications.
I
TAV
200Aeach device
high Surge Current 6000 A60Hz
Easy Construction
Non-isolated. Mounting base as common Anode terminal
Applications
Welding power Supply
Various DC power Supply
PWB200AA
;
GateCharacteristics
GateCurrent(mA)
2
2
2 2 2
5
2
5
5 5 5
1
1
2
3
GateVoltage(V)
PeakGateCurrent(3A
PeakForwardGateVoltag10V)
PeakGate
Power10W)
AverageGatePower(1W)
150℃ 30℃
25℃
MaximumGateVoltagethatwillnotteriggeranyunit
On-StateVoltagemax
On-StateVoltage(V)
5
5
2
1
2
2
2
3
0 1.0 2.01.5
On-StateCurrent(A)
直流
: ConductionAngle
360
。
2
Peroneelement
θ= 9 0
AverageOn-StateCurrentVsPowerDissipation
(Singlephasehalfwave)
AverageOn-StateCurrent(A)
0
0
0
0
0
0 0 0
PowerDissipation(W)
D.C.
θ=30゜
θ= 6 0
θ=120
θ=180
直流
360
。
2
θConductionAngle
0
0
0
0
0
0
0
AverageOn-StateCurrentVsMaximumAllowable
CaseTemperature(Singlephasehalfwave)
AverageOn-StateCurrent(A)
0 0 0 0
0
AllowableCaseTemperature(℃)
D.C.
Peroneelement
θ= 3 0
θ= 6 0
θ= 9 0
θ=120
θ=180
0
0
0
0
0
0
2 5 2 5
1
2
0
1
SurgeOn-StateCurrentRating
(Non-Repetitive)
Time(cycles)
SurgeOn-StateCurrent(A)
0H z
Peroneelement
Tj=25℃
0.4
0.2
0.0
0.0
0.8
0.6
0.4
0.2
2 25 5
3
2 2 5
1 2 5
0
1
TransientThermalImpedance
Timet(sec)
TransientThermalImpedanceθj-c(℃/W
Peroneelement
JunctiontoCase