Unit:A
Symbol Item Conditions Ratings
200
Unit
IT(AV)Average On-State Current
IT(RMS)R.M.S. On-State Current
Single phase, half wave, 180°conduction, Tc:121℃
Single phase, half wave, 180°conduction, Tc:121℃
ITSM Surge On-State Current
I2t I2t
PGM
Peak Gate Power Dissipation
PG(AV)
Average Gate Power Dissipation
IFGM Peak Gate Current
VFGM Peak Gate Voltage(Forward)
1
/
2cycle, 50Hz/60Hz, peak value, non-reqetitive
A
314 A
5400/6000 A
1499400
10 A2S
W
1
VRGM Peak Gate Voltage(Reverse)
di/dt
Critical Rate of Rise of On-State Current
Tj
Operating Junction Temperature
Tstg Storage Temperature
Mounting
torque
Mass
Mounting(M6)
Terminal(M6)
I
G
=200mA,Tj=25℃,V
D
=
1
/
2
V
DRM
,dI
G
/
dt=1A
/
μs
Recommended Value 2.5-3.9(25-40)
Recommended Value 2.5-3.9(25-40)
3W
A
10 V
5 V
50 A/μs
−40 to +150 ℃
−40 to +125
4.7(48)
4.7(48)
280
℃
N・m
(㎏f・B)
g
Symbol Item Conditions Ratings
60
Unit
IDRM
Repetitive Peak Off-State Current, max.
IRRM
Repetitive Peak Reverse Current, max.
at VDRM, Single phase, half wave, Tj=150℃
at VDRM, Single phase, half wave, Tj=150℃
VTM
Peak On-State Voltage, max.
IGT Gate Trigger Current, max.
VGD
Non-Trigger Gate, Voltage. min.
tgt Turn On Time, max.
dv/dt
Critical Rate of Rise of Off-State Voltage, min.
IHHolding Current, typ.
On-State Current 630A, Tj=25℃Inst. measurement
Tj=25℃,IT=1A,VD=6V
mA
60 mA
1.20 V
150
Tj=150℃,VD=
1
/
2
VDRM
IT=200A,IG=200mA,Tj=25℃,
VD=
1
/
2
VDRM,dIG/dt=1A/μs
0.25
mA
VGT Gate Trigger Voltage, max. Tj=25℃,IT=1A,VD=6V 2 V
V
10
Tj=150℃,VD=2
/
3VDRM,Exponential wave.
Tj=25℃
Rth(j-c)Thermal Impedance, max. Junction to case(1
/
3Module)
200
μs
V/μs
70 mA
0.12 ℃/W
■Electrical Characteristics
■Maximum Ratings
Symbol Item PWB200AA30
Ratings Unit
VRRM
Repetitive Peak Reverse Voltage
300 V
360 V
300
PWB200AA40
400
480
400 V
VRSM
VDRM
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage