IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS(R) Power-Transistor Product Summary Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified V DS 40 V R DS(on),max (SMD version) 3.4 m ID 80 A * MSL1 up to 260C peak reflow * 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested Type Package Ordering Code Marking IPB80N04S2-04 PG-TO263-3-2 SP0002-18154 2N0404 IPP80N04S2-04 PG-TO220-3-1 SP0002-19054 2N0404 IPI80N04S2-04 PG-TO262-3-1 SP0002-19058 2N0404 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Value 80 Unit A 80 Pulsed drain current2) I D,pulse T C=25 C 320 Avalanche energy, single pulse2) E AS I D=80A 810 mJ Gate source voltage4) V GS 20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... +175 C T C=25 C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.5 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 A 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 C - 0.01 1 - 1 100 V DS=40 V, V GS=0 V, T j=125 C2) V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A, - 2.9 3.7 m V GS=10 V, I D=80 A, SMD version - 2.6 3.4 Rev. 1.0 page 2 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 Parameter Symbol Values Conditions Unit min. typ. max. - 5300 - - 2200 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 580 - Turn-on delay time t d(on) - 26 - Rise time tr - 45 - Turn-off delay time t d(off) - 56 - Fall time tf - 32 - Gate to source charge Q gs - 25 35 Gate to drain charge Q gd - 47 75 Gate charge total Qg - 127 170 Gate plateau voltage V plateau - 4.9 - V - - 80 A - - 320 V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=80 A, R G=2.2 pF ns Gate Charge Characteristics2) V DD=32 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 C - 0.9 1.3 V Reverse recovery time2) t rr V R=20 V, I F=I S, di F/dt =100 A/s - 53 75 ns Reverse recovery charge2) Q rr V R=20 V, I F=I S, di F/dt =100 A/s - 85 125 nC T C=25 C 1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 208A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13. 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS 6 V I D = f(T C); V GS 10 V 350 100 300 80 60 200 I D [A] P tot [W] 250 150 40 100 20 50 0 0 0 50 100 150 200 0 50 T C [C] 100 150 200 T C [C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 10 s 0.5 100 s 1 ms 100 10-1 I D [A] Z thJC [K/W] 0.1 0.05 10-2 10 0.01 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-7 page 4 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 C R DS(on) = (I D); T j = 25 C parameter: V GS parameter: V GS 300 18 250 6V 14 150 RDS(on) [mW] I D [A] 200 5.5 V 10 100 5V 6V 6 50 5 V5.5 V 6.5 V 4.5 V 0 2 0 2 4 6 8 10 10 V 0 20 40 60 80 120 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. Forward transconductance I D = f(V GS); V DS = 6V g fs = f(I D); T j = 25C parameter: T j parameter: g fs 320 200 280 175 240 150 200 125 g fs [S] I D [A] 100 160 100 120 75 80 50 175 C 40 25 C 25 -55 C 0 0 2 3 4 5 6 V GS [V] Rev. 1.0 0 50 100 150 I D [A] page 5 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 80 A; VGS = 10 V parameter: I D 6 4 5 3.5 4 3 V GS(th) [V] R DS(on) [m] 9 Typ. Drain-source on-state resistance 3 250 A 2.5 2 2 1 1.5 0 1250 A 1 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [C] 100 140 180 T j [C] 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD) parameter: T j 104 103 Ciss Coss I F [A] C [pF] 102 103 Crss 102 100 0 5 10 15 20 25 30 V DS [V] Rev. 1.0 25 C 175 C 101 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] page 6 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 13 Typical avalanche energy 14 Typ. gate charge E AS = f(T j) V GS = f(Q gate); I D = 80 A pulsed parameter: I D = 80A 900 12 800 8V 32 V 10 700 8 500 V GS [V] E AS [mJ] 600 400 300 6 4 200 2 100 0 0 25 75 125 0 175 20 40 T j [C] 60 80 100 120 Q gate [nC] 15 Typ. drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) = f(T j); I D = 1 mA 48 V GS 46 Qg V BR(DSS) [V] 44 42 40 Q gate 38 Q gs Q gd 36 -60 -20 20 60 100 140 180 T j [C] Rev. 1.0 page 7 2006-03-02 IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 Published by Infineon Technologies AG St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-02