IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25 °C, VGS=10 V 80 A
TC=100 °C,
VGS=10 V2) 80
Pulsed drain current2) ID,pulse TC=25 °C 320
Avalanche energy, single pulse2) EAS ID=80A 810 mJ
Gate source voltage4) VGS ±20 V
Power dissipation Ptot TC=25 °C 300 W
Operating and storage temperature Tj, Tstg -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS 40 V
RDS(on),max (SMD version) 3.4 mΩ
ID80 A
Product Summary
PG-TO220-3-1 PG-TO262-3-1PG-TO263-3-2
Type Package Ordering Code Marking
IPB80N04S2-04 PG-TO263-3-2 SP0002-18154 2N0404
IPP80N04S2-04 PG-TO220-3-1 SP0002-19054 2N0404
IPI80N04S2-04 PG-TO262-3-1 SP0002-19058 2N0404
Rev. 1.0 page 1 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - 0.5 K/W
Thermal resistance, junction -
ambient, leaded RthJA --62
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2 cooling area5) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 40 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=250 µA 2.1 3.0 4.0
Zero gate voltage drain current IDSS
VDS=40 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=40 V, VGS=0 V,
Tj=125 °C2) - 1 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=80 A, - 2.9 3.7 mΩ
VGS=10 V, ID=80 A,
SMD version - 2.6 3.4
Values
Rev. 1.0 page 2 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics2)
Input capacitance Ciss - 5300 - pF
Output capacitance Coss - 2200 -
Reverse transfer capacitance Crss - 580 -
Turn-on delay time td(on) -26-ns
Rise time tr-45-
Turn-off delay time td(off) -56-
Fall time tf-32-
Gate Char
g
e Characteristics2)
Gate to source charge Qgs -2535nC
Gate to drain charge Qgd -4775
Gate charge total Qg- 127 170
Gate plateau voltage Vplateau - 4.9 - V
Reverse Diode
Diode continous forward current2) IS- - 80 A
Diode pulse current2) IS,pulse - - 320
Diode forward voltage VSD
VGS=0 V, IF=80 A,
Tj=25 °C - 0.9 1.3 V
Reverse recovery time2) trr
VR=20 V, IF=IS,
diF/dt=100 A/µs -5375ns
Reverse recovery charge2) Qrr
VR=20 V, IF=IS,
diF/dt=100 A/µs - 85 125 nC
1) Current is limited by bondwire; with an RthJC = 0.5K/W the chip is able to carry 208A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=20 V, VGS=10 V,
ID=80 A, RG=2.2 Ω
VDD=32 V, ID=80 A,
VGS=0 to 10 V
2) Defined by design. Not subject to production test.
3) See diagram 13.
4) Qualified at -20V and +20V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0 page 3 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 10 V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
10-7
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
0
50
100
150
200
250
300
350
0 50 100 150 200
TC [°C]
Ptot [W]
0
20
40
60
80
100
0 50 100 150 200
TC [°C]
ID [A]
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID [A]
Rev. 1.0 page 4 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = (ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. Forward transconductance
ID = f(VGS); VDS = 6V gfs = f(ID); Tj = 25°C
parameter: Tjparameter: gfs
4.5 V
5 V
5.5 V
6 V
0
50
100
150
200
250
300
0246810
VDS [V]
ID [A]
5 V
5.5 V
6 V
6.5 V
10 V
2
6
10
14
18
0 20 40 60 80 100 120
ID [A]
RDS(on) [mW]
-55 °C
25 °C
175 °C
0
40
80
120
160
200
240
280
320
23456
VGS [V]
ID [A]
0
25
50
75
100
125
150
175
200
0 50 100 150
ID [A]
gfs [S]
Rev. 1.0 page 5 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(ON) = f(Tj)VGS(th) = f(Tj); VGS = VDS
parameter: ID = 80 A; VGS = 10 V parameter: ID
11 Typ. capacitances 12 Typical forward diode characteristicis
C= f(VDS); VGS = 0 V; f = 1 MHz IF = f(VSD)
parameter: Tj
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF [A]
Ciss
Coss
Crss
104
103
102
0 5 10 15 20 25 30
VDS [V]
C [pF]
250 µA
1250 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
0
1
2
3
4
5
6
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
Rev. 1.0 page 6 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
13 Typical avalanche energy 14 Typ. gate charge
EAS = f(Tj)VGS = f(Qgate); ID = 80 A pulsed
parameter: ID = 80A
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS) = f(Tj); ID = 1 mA
0
100
200
300
400
500
600
700
800
900
25 75 125 175
Tj [°C]
EAS [mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
8 V 32 V
0
2
4
6
8
10
12
0 20406080100120
Qgate [nC]
VGS [V]
36
38
40
42
44
46
48
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
Rev. 1.0 page 7 2006-03-02
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
©
Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
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Rev. 1.0 page 8 2006-03-02
