BC640 - ON Semiconductor - Datasheet.Live

 Semiconductor Components Industries, LLC, 2001

June, 2000 – Rev. 1 1Publication Order Number:

BC636/D

BC636, BC636-16, BC638,

BC640, BC640-16

High Current Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage BC636

BC638

BC640

VCEO –45

–60

–80

Vdc

Collector-Base Voltage BC636

BC638

BC640

VCBO –45

–60

–80

Vdc

Emitter-Base Voltage VEBO –5.0 Vdc

Collector Current — Continuous IC–0.5 Adc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –55 to

+150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Ambient RθJA 200 °C/W

Thermal Resistance,

Junction to Case RθJC 83.3 °C/W Device Package Shipping

ORDERING INFORMATION

BC636 TO–92

http://onsemi.com

CASE 29

TO–92

STYLE 14

5000 Units/Box

BC636ZL1 TO–92 2000/Ammo Pack

COLLECTOR

BASE

EMITTER

BC636–16ZL1 TO–92 2000/Ammo Pack

BC638 TO–92 5000 Units/Box

BC638ZL1 TO–92 2000/Ammo Pack

BC640 TO–92 5000 Units/Box

BC640ZL1 TO–92 2000/Ammo Pack

BC640–16 TO–92 5000 Units/Box

BC636, BC636–16, BC638, BC640, BC640–16

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –10 mAdc, IB = 0) BC636

BC638

BC640

V(BR)CEO –45

–60

–80

—

Vdc

Collector–Base Breakdown Voltage

(IC = –100 µAdc, IE = 0) BC636

BC638

BC640

V(BR)CBO –45

–60

–80

—

Vdc

Emitter–Base Breakdown Voltage

(IE = –10 Adc, IC = 0) V(BR)EBO –5.0 — — Vdc

Collector Cutoff Current

(VCB = –30 Vdc, IE = 0)

(VCB = –30 Vdc, IE = 0, TA = 125°C)

ICBO —

——

—–100

–10 nAdc

µAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = –5.0 mAdc, VCE = –2.0 Vdc)

(IC = –150 mAdc, VCE = –2.0 Vdc) BC636

BC636–16

BC638

BC640

BC640–16

(IC = –500 mA, VCE = –2.0 V)

hFE 25

100

—

250

160

250

—

Collector–Emitter Saturation Voltage

(IC = –500 mAdc, IB = –50 mAdc) VCE(sat) —

—–0.25

–0.5 –0.5

—Vdc

Base–Emitter On Voltage

(IC = –500 mAdc, VCE = –2.0 Vdc) VBE(on) — — –1.0 Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz) fT— 150 — MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cob — 9.0 — pF

Input Capacitance

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cib —110 — pF

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

BC636, BC636–16, BC638, BC640, BC640–16

http://onsemi.com

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)

V, VOLTAGE (VOLTS)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-1000

-1

-2

-5

-10

-20

-50

-100

-200

-500

-100-1 -2 -3 -4 -5 -7 -10 -20 -30-40 -50 -70

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

BC636

BC638

BC640

PD TA 25°C

PD TC 25°C

SOA = 1S

PD TC 25°C

PD TA 25°C

500

200

100

20-1 -3 -5 -10 -30 -50 -100 -300 -500 -1000

IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

VCE = -2 V

500

300

100

20-1 -10 -100 -1000

IC, COLLECTOR CURRENT (mA)

Figure 3. Current Gain Bandwidth Product

-1

-0.8

-0.6

-0.4

-0.2

0-1 -10

IC, COLLECTOR CURRENT (mA)

Figure 4. “Saturation” and “On” Voltages

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = -2 V

VCE(sat) @ IC/IB = 10

-0.2

-1.0

-2.2

-1.6

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

VCE = -2 VOLTS

∆T = 0°C to +100°C

θV for VBE

-A

-B

-L

VCE = -2 V

-100 -1000

-1 -3 -5 -10 -30 -50 -100 -300 -500 -1000

BC636, BC636–16, BC638, BC640, BC640–16

http://onsemi.com

PACKAGE DIMENSIONS

TO–92

(TO–226)

CASE 29–11

ISSUE AL NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X–X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

BC636/D

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Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

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