APTC60DDAM70CT1G VDSS = 600V RDSon = 70m max @ Tj = 25C ID = 39A @ Tc = 25C Dual boost chopper Super Junction MOSFET SiC chopper diode Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * * SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration * * Pins 3/4 must be shorted together Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 600 39 29 160 20 70 250 20 1 1800 Unit V September, 2009 ID Parameter Drain - Source Breakdown Voltage A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTC60DDAM70CT1G - Rev 0 Symbol VDSS APTC60DDAM70CT1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25C Tj = 125C VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = 20 V, VDS = 0V 2.1 3 Min Typ 7 2.56 0.21 Max 25 250 70 3.9 100 Unit Max Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge VGS = 10V VBus = 300V ID = 39A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy nF 259 nC 29 111 21 Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 39A RG = 5 30 ns 283 84 402 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 39A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 39A, RG = 5 J 980 657 J 1206 Chopper SiC diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance VR=600V Min 600 Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C IF = 20A, VR = 300V di/dt =1800A/s IF = 20A Typ Max 100 200 20 1.6 2 400 2000 28 f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 www.microsemi.com Unit V A A 1.8 2.4 V September, 2009 IRM Test Conditions nC pF 2-7 APTC60DDAM70CT1G - Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC60DDAM70CT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ CoolMOS SiC Diode To heatsink M4 4000 -40 -40 -40 2.5 Max 0.5 1.5 Unit C/W V 150 125 100 4.7 80 C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C Min T25 = 298.15 K TC=100C RT = R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 - T T 25 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTC60DDAM70CT1G - Rev 0 September, 2009 SP1 Package outline (dimensions in mm) APTC60DDAM70CT1G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 VGS=15&10V 160 ID, Drain Current (A) 6.5V 6V 120 5.5V 80 5V 40 4.5V 4V 0 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 120 100 80 60 TJ=125C 40 20 TJ=25C 0 5 10 15 20 25 0 Normalized to VGS=10V @ 19.5A 1.05 VGS=10V VGS=20V 1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 40 RDS(on) vs Drain Current 1.1 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 0.95 0.9 35 30 25 20 15 10 5 September, 2009 0 0 0 10 20 30 40 50 60 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (C) 150 4-7 APTC60DDAM70CT1G - Rev 0 ID, Drain Current (A) 200 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 100 limited by RDSon 100s 10 0.6 Single pulse TJ=150C TC=25C 1 ms 10 ms 1 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 10 0 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 100 100 VDS, Drain to Source Voltage (V) TC, Case Temperature (C) 10000 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=39A TJ=25C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 September, 2009 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 39A 2.5 300 5-7 APTC60DDAM70CT1G - Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DDAM70CT1G APTC60DDAM70CT1G Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=5 TJ=125C L=100H 200 150 100 50 VDS=400V RG=5 TJ=125C L=100H 100 tr and tf (ns) 80 60 40 tr 20 td(on) 0 0 0 10 20 30 40 50 60 70 0 10 20 ID, Drain Current (A) 2 40 50 60 70 Switching Energy vs Gate Resistance 5 Switching Energy (mJ) Eoff 1.5 1 Eon 0.5 0 VDS=400V ID=39A TJ=125C L=100H 4 3 Eoff 2 Eon 1 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 0 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 140 120 ZCS 100 80 VDS=400V D=50% RG=5 TJ=125C TC=75C 60 40 20 ZVS Hard switching 0 10 15 20 25 30 35 ID, Drain Current (A) 5 10 15 20 25 30 35 40 45 50 40 TJ=150C 100 TJ=25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 September, 2009 Switching Energy (mJ) VDS=400V RG=5 TJ=125C L=100H 30 ID, Drain Current (A) Switching Energy vs Current 2.5 Frequency (kHz) tf 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com 6-7 APTC60DDAM70CT1G - Rev 0 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60DDAM70CT1G SiC Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.6 0.9 1.4 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 400 30 TJ=75C IR Reverse Current (A) IF Forward Current (A) TJ=25C TJ=175C 20 TJ=125C 10 0 0 0.5 1 1.5 2 2.5 3 3.5 TJ=175C 350 300 TJ=125C 250 200 TJ=75C 150 100 TJ=25C 50 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage 600 400 September, 2009 200 0 1 10 100 VR Reverse Voltage 1000 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTC60DDAM70CT1G - Rev 0 C, Capacitance (pF) 800