RMB2S - RMB6S Taiwan Semiconductor 0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier FEATURES KEY PARAMETERS Ideal for automated placement Reliable low cost construction utilizing molded plastic technique High surge current capability Small size, simple installation UL Recognized File # E-326243 Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 0.8 A VRRM 200 - 600 V IFSM 30 A TJ MAX 150 C Package TO-269AA (MBS) Configuration Quad APPLICATIONS Switching mode power supply (SMPS) Lighting application MECHANICAL DATA Case: TO-269AA (MBS) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.12g (approximately) TO-269AA (MBS) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER SYMBOL Marking code on the device RMB2S RMB4S RMB6S RMB2S RMB4S RMB6S UNIT Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V VDC 200 400 600 V Maximum DC blocking voltage Maximum average forward current 60Hz sine wave resistance load on glass-epoxy P.C.B. Maximum average forward current 60Hz sine wave resistance load on aluminum substrate Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Rating for fusing (t<8.3ms) 0.5 A 0.8 A IFSM 30 A It 2 3.74 As Junction temperature TJ - 55 to +150 C Storage temperature TSTG - 55 to +150 C IF(AV) 1 2 Version: H1810 RMB2S - RMB6S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RJA 85 C/W Junction-to-ambient thermal resistance per diode ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER CONDITIONS Forward voltage per diode (1) SYMBOL TYP MAX UNIT VF - 1 V - 5 A - 100 A CJ 13 - pF trr - 150 ns IF = 0.4A, TJ = 25C Reverse current @ rated VR per diode TJ = 25C (2) IR TJ = 125C Junction capacitance 1 MHz, VR=4.0V IF=0.5A,IR=1.0A Reverse recovery time IRR=0.25A Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. RMBxS PART NO. SUFFIX(*) H PACKING PACKING CODE CODE RC SUFFIX G MC (Note 1, 2) Notes: 1. "x" defines voltage from 200V (RMB2S) to 600V (RMB6S) PACKAGE MBS PACKING 3,000 / 13" Paper reel 3,000 / 13" Plastic reel 2. Whole series with green compound (halogen-free) *: Optional available EXAMPLE EXAMPLE P/N PART NO. RMB2SHRCG RMB2S PART NO. PACKING PACKING CODE SUFFIX CODE SUFFIX H RC G 2 DESCRIPTION Green compound AEC-Q101 qualified Version: H1810 RMB2S - RMB6S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 30 25 0.8 Aluminum Substrate CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 1 0.6 0.4 Glass Epoxy P.C.B. 20 15 10 0.2 5 f=1.0MHz Vsig=50mVp-p 0 0 0 20 40 60 80 100 AMBIENT TEMPERATURE 120 140 160 0.1 100 Fig.4 Typical Forward Characteristics 100 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A) Fig.3 Typical Reverse Characteristics TJ=125C 10 1 10 REVERSE VOLTAGE (V) (oC) 1 0.1 TJ=25C 10 1 0.1 0.01 0 20 40 60 80 0.2 100 0.4 0.6 0.8 1 1.2 1.4 1.6 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 Version: H1810 RMB2S - RMB6S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.5 Maximum Non-repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 35 8.3ms Single Half Sine Wave 30 25 20 15 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: H1810 RMB2S - RMB6S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-269AA (MBS) Unit (mm) DIM. Unit (inch) Min Max Min Max A 4.50 4.90 0.177 0.193 B 0.56 0.84 0.022 0.033 C 3.60 5.00 0.142 0.197 D - 6.90 - 0.272 E 2.20 2.60 0.087 0.102 F 2.30 2.70 0.091 0.106 G - 0.20 - 0.008 H - 2.90 - 0.114 I 0.95 1.53 0.037 0.060 J 0.70 1.10 0.028 0.043 K 0.15 0.35 0.006 0.014 L 1.10 2.12 0.043 0.083 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 1.70 0.067 B 0.90 0.035 C 4.40 0.173 D 8.10 0.319 E 1.30 0.051 F 6.30 0.248 MARKING DIAGRAM P/N YW F 5 = Marking Code = Date Code = Factory Code Version: H1810 RMB2S - RMB6S Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: H1810