SAMSUNG SEMICONOUCTOR INC ! 14E O PP eaease oag?720 0 eee . T- 33~ 3 MJE3055T NPN SILICON TRANSISTOR 4 GENERAL. PURPOSE AND SWITCHING APPLIGATIONS . TO-220 DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Galn-Bandwidth Product (fy = 2MHz (MIN)) ABSOLUTE MAXIMUM RATINGS (T,.=25C) Characteristic Symbai Rating Unit . Collector-Base Voltage . Veso 70 v Collector-Emitter Voltage Veeo 60 v Emitter-Base Voltage Veo 5 Vv Collector Current _ Ie 14 sl A Base Current lp . 6 A Collector Dissipation (T, c=25C)-| Po 75 Ww : Gollector Dissipation (= = 25C) Po 0.8 Ww 1. Base 2, Collector 3. Emitter Junction Temperature Tj 1650 C Storag Temperature . | Tstg 55~150 C ELECTRICAL CHARACTERISTICS (Ta= 25C) Characteristle Symbol Test Condition Min Max Unit Collector Emitter Sustaining Voltage Veceo(sus) kk=200mA, 1p=0 60 _Vv Collector Cutoff Curent Ice Vce=30V, ls=0 700 pA Collector Cutoff Current loex Vee=7OV, Vee(off}=1.5V 1 mA Vce=70, Veeloff)= 1. 5V 5 mA Te=150C . Emitter Cutoff Current liso Vaa=5V, le=0 . mA DC Current Gain - | Dre | Vce=4V, o=4A : 20 400 / Vce=4V, b= 10A . 5 * Collector Emitter Saturation Voltage | Vcelsat) badd, b=0.4A 1.1 v _| le 100, lb=3.3A 8 v *Base Emitter On Voltage Vee(on) Veer 4V, o=4A . 1.8 Vv Current Gain Bandwidth Product fr Vee=10V, =500mA, f=500KHz 2 MHz = * Pulse test: PW<300ps, duty cycle<2% Pulse ck SAMSUNG SEMICONDUCTOR 285!SAMSUNG SEMICONDUCTOR INC MJESOSST nue 0 Pp ese4ne2 ooorz22 2 i NPN SILICON TRANSISTOR SAFE OPERATING AREA (ofA), COLLECTOR CURRENT 1 2 VeatV}, COLLECTOR-EMITTER VOLTAGE 10 20 DC CURRENT GAIN * fee, OC CURRENT GAIN 2 i 0.01 6.02 0.06 0.1 02 905 1 2 Ip{A}, COLLECTOR CURRENT 60 5 100 10 tee t ~ T+ 3373 TION VOLTAGE VOLTAGE GOLLECTOR-EMITTER SA BASE-EMITTER SATURA 10 2s 2 2 & Cc @ 1 w @w fex{eat),Ver{aatyV), SATURANTION VOLTAGE Vv oo; a 8 1 02 Os 1 2 5 10 20 6G +00 Ic{A), COLLECTOR CURRENT POWER DERATING 90 80 70 6a 50 40 Potw), POWER DISSIPATION 20 25 SO 75 100 125 150 175 200 225 250 Te(C), CASE TEMPERATURE 8 satsunc SEMICONDUCTOR 286TIP29 SERIES ~ SAMSUNG SEMICONDUCTOR TNC t MEDIUM POWER LINEAR SWITCHING APPLICATIONS _ * Complementary to TIP30/30A/308/30C wue 0 ff eaeunya goo7712 4 fj (TIP29/29A/29B/29C) NPN. EXITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta =25C) T-+33-07 70-220 Characteristic Symbol Rating Unit Collector-Base Voltage =: TIP29 Veso 40 Vv : TIP29A 60 Vv : TIP29B 80 Vv - : TIP29C / 100 v -Collector-Emitter Voltage : TIP29 Vceo 40 ] OV : TIP29A 60 Vv : TIP29B 80 v > TIP29C 100 Vv Emitter-Base Voltage Veno 5. Vv Collector Current (DC) lk 1 A Collector Curfent (Pulse) Io 3 A Base Currnt 7 0.4 A Collector Dissipation (T.= 25C) Po 30 - Ww Collector Dissipation (T2=25C) Pe 2 Ww Junction Temperature Tj 150 S Storage Temperature Tstg 65~150 | C 1. Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (T. =25C) Characteristic Symbol Test Condition Min | Max | Unit *Collector Emitter Sustaining Vaitage : TIP29 BVceo (sus) | Ic=3OmA, [=O 40 Vv > TIP29A 60 V : TIP29B 80 Vv : TIP29C 100 Vv Collector Cutoff Current : TIP29/29A leo ce=30V, Ip=0 0.3 mA : TIP29B/29C |* Vce=60V, =0 0.3 | mA Collector Cutoff Current : TIP29 Ices Vce=40V, Ves=O 200 pA > TIP29A Vce=60V, Vep=0 200 vA : TIP29B Vce=80V, Vep=O 200 uA ; TIP29C Vee=100V, Ves=O 200 | pA Emitter Cutoff Current , lepo Vee=5V, =O -41.0 | mA *DC Current Gain Nee Vece=4V, k=0.2A 40 Vce=4V, lb=1A 16 75 * Collector-Emitter Saturation Voltage Vce (sat) le=1A, p=125mMA 0.7 Vv * Base-Emitter On Voltage Vee (on) Vce=4V, b=1A 1.3 Vv Current Gain Bandwidth Product f Vce=10V, c= 200mA | 3.0 MHz . f=1MHz * Pulse Test: PW<300us, Duty Cycle<2% gas 287 a SAMSUNG SEMICONDUCTORTIP29 SERIES. nue D J 2auua42 o007713 & i (T IP29/29A/29B/29C) NPN .EXITAXIAL SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR INC 22 : ~_ 1:33.07 DC CURRENT. GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE on & 8 gg 3 be, OC CURRENT GAIN mn Vox (nat) Vee(sat) (mV}, SATURATION VOLTAGE 3.5 #10 300 1000 3000 10000 se 1 3.5 10 3050100 300.) 6 6tc00 3060 10000 IcfmA}, COLLECTOR CURRENT Io{mA)}, COLLECTOR CURRENT POWER DERATING SAFE OPERATING AREA os PolW}, POWER DISSIPATION K{A}, COLLECTOR CURRENT 8 03 Veceq MAX: Veeo Vceq MAX- 01 45 10 30050 100 300 Tel*C}, CASE TEMPERATURE Voel), COLLECTOR-EANTTER VOLTAGE cs SAMSUNG SEMICONDUCTOR 288seniemrenectin rien emer wh SAMSUNG SEMICONDUCTCR . INC LE O FF PW4L4e OOG??LY 8 TIP3O0 SERIES ode en nee j (TIP30/30A/30B/30C) PNP EXITAXIAL SILICON TRANSISTOR T- 3.3~ /?P . 4 MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement to TIP29/29A/29B/29C TO0-220 ABSOLUTE MAXIMUM RATINS (Ta=25C) Characteristic . Symbol Rating Unit Collector-Base Voltage : TIP3O Veso -40 Vv + TIP30A - 60 Vv - : TIP30B -80 Vv - > TIP30C 100 Vv Collector-Fmitie: Voltage : TIP30 Vceo 40, Vv : TIPS0A +6o~| Vv : TIP30B -80 Vv . + TIP30C ~{00 Vv 1. Base 2. Collector 3. Emitter Emitter-Base_ Voltage Ves0 -5:-| V - Collector Current (DC) _ , le -1 A Collector Current (Pulse) be -3 A Base Current | te 0.4 A ; Collector Dissipation (T.=25C) Po - 30 WwW Cofiector Dissipation (T,=25C) - Pc ' 2 Ww Junction Temperature , Tj 150 C Storage Temperature . Tstg 65~1 50 | C ELECTRICAL CHARACTERISTICS (T.=25C) Characteristic Symbol Test Condition =~ | Min | Max | Unit * Collector Emitter Sustaining Voltage : TIP3O0 BVceo (sus) | le=3OmA, la=0 -40 Vv : TIPSOA . -60 v > TIP30B -80 Vv . : TIP3OC : --100| - Vv Collector Cutoff Current . : TIP30/30A | Iceo Voce 30V, Ip=O ~0.3 | mA . - + TIP3OB/30C | Vce=60V, Ip=O ~0.3 | mA Collector Cutoff Current : TIP30 lees Vce=40V, Ven=O +200 | pA : TIPSOA | Vce=-GOV, Ves=0 =200 |] pA : TIP30B - | Vce=~80V, Vep=O 200 | pA : TIP30G Vee 100V, Ven=0 ~200| pA Emitter Cutoff. Current leso Vez=5V, le=0 | | 1.07) mA *DC Current Gain hee / Vee=4V, lc=-0.2A 40 ; Vce=4V, ke 1A 15 75 * Cokector-Emitter Saturation Voltage Vce (sat). | b= - 1A, b= 125mA ~O.7} V |*Base-Emitter On Voltage Vee (on) Voe=4V, b=1A -1.3] V Current Gain Bandwidth Product fo Vce=10V, k=200mA| 3.0 MHz f=1MHz ; 1 * Pulse Test: PWS300ys, Duty Cycle<2% Gg samsunc SEMICONDUCTOR | an 289i SAMSUNG SEMI CONDUCTOR INC TIP30 SERIES (T IP30/30A/30B/30C) PNP EXITAXIAL SILICON TRANSISTOR _L4E O Bescuse QoO0?e1s T i tee, OC CURRENT GAIN 1 + PofW), POWER DISSIPATION v DC CURRENT GAIN {mA}, COLLECTOR CURRENT POWER DERATING 50 100 150 Te{*C), CASE TEMPERATURE T-33-4 BASE-EMITTER SATURATION VOLTAGE SATURATION VOLTAGE 8 g 8 Yee (sat) Vee(sat) (mV), SATURATION t ,o = 73-5 410 -30-0-100 -300 -1000 - 3000-10000 L{mA), COLLECTOR CURRENT SAFE OPERATING AREA 1 S a kA), COLLECTOR CURRENT ; 6 2 7" & ~0.1 -50 -100 - 300 Vee(}, COLLECTOR-EMITTER VOLTAGE ee SAMSUNG SEMICONDUCTOR 290