MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
3 - 20
HIGH VOLTAGE
66099-4XX RADIATION TOLERANT OPTOCOUPLER
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Rev A 9\25\02
Features:
• Designed to meet or exceed MIL-PRF-19500
radiation requirements
• High Current Transfer Ratio - 200% typical
• 1kVdc electrical input to output isolation
• Base lead provided for conventional transistor
biasing
• 150 V Breakdown voltage
Applications:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control
DESCRIPTION
The 66099-4XX optocoupler consists of a 660 nm GaAIAs LED optically coupled to a high voltage photodiode driving a
high voltage transistor mounted in a hermetic TO-5 package. This configuration has proven to be highly tolerant to both
proton and total dose radiation.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C
Lead Solder Temperature (1/16” (1.6mm) from case for 5 seconds) ................................................................................ 240°C
Input Diode Forward DC Current.........................................................................................................................................40mA
Input Power Dissipation (see Note 1)................................................................................................................................80mW
Reverse Input Voltage ............................................................................................................................................................. 3V
Collector-Base Voltage ......................................................................................................................................................... 150V
Collector-Emitter Voltage .....................................................................................................................................................150V
Emitter-Base Voltage................................................................................................................................................................ 6V
Continuous Collector Current ............................................................................................................................................300mA
Continuous Transistor Power Dissipation (see Note 2)...................................................................................300mW
Notes:
1. Derate linearly 0.80 mW/°C above 25°C.
2. Derate linearly 3.0 mW/°C above 25°C.
Package Dimensions Schematic Diagram
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
6 LEADS
Ø0.016 [0.41]
Ø0.019 [0.48]
1
2
3
56
7
0.335 [8.51]
0.305 [7.75]
MIN.
0.040 [1.02]
MAX.
0.500 [12.70]
0.155 [3.94]
0.185 [4.70]
0.045 [1.14]
0.029 [0.73]
0.034 [0.864]
0.028 [0.711]
45°
3
5
E
B
K
72
1
C
A
Ø0.200 [5.08]
0.370 [9.40]
0.336 [8.51]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
3 - 21
66099 –4XX HIGH VOLTAGE RADIATION TOLERANT OPTOCOUPLER
Rev A 9\25\02
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Input Diode Static Reverse Current IR 100 µA VR = 2V
Input Diode Static Forward Voltage VF 0.8 2 V IF = 10mA
OUTPUT TRANSISTOR CHARACTERISTICS
TA = 25°C unless otherwise noted
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Collector-Base Breakdown Voltage V(BR)CBO 150 V IC = 100µA, IB = 0, IF = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 150 V IC = 1mA, IB = 0, IF = 0
Emitter-Base Breakdown Voltage V(BR)EBO 4 V IC = 0mA, IE = 100µA, IF = 0
Collector-Emitter Cutoff Current ICEO 100 nA VCE = 20V
COUPLED CHARACTERISTICS
TA = 25°C unless otherwise noted
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Current Transfer Ratio CTR 100 % VCE = 1V, IF = 10mA
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IF = 20mA, IC = 10mA
Input-Output Isolation Current IISO 100 nA VI-O = 1000V
Rise Time tr 20 µs VCE = 10V, IF = 10mA,
RL = 100Ω
Fall Time tf 20 µs VCE = 10V, IF = 10mA,
RL = 100Ω
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level IFL 0 10 µA
Input Current, High Level IFH 1 20 mA
Operating Temperature TA -55 100 °C
ORDERING INFORMATION:
PART NUMBER DESCRIPTION
66099-401 Radiation Tolerant, High Voltage Optocoupler, Commercial
66099-415 Radiation Tolerant, High Voltage Optocoupler, Screened
