NPN Switching Transistor
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
BSV52
This device is designed for high speed saturated switching at
collector currents of 10 mA to 100 mA. Sourced from Process 21.
Symbol Parameter Value Units
VCEO Collecto r-Emitter Volt age 12 V
VCES Collector-Base Voltage 20 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
*BSV52
PDTotal Device Di ssipation
Derate above 25°C225
1.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Am b i ent 556 °C/W
C
E
B
SOT-23
Mark: B2
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
BSV52
3
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO Col lector-Emitter Breakdown Voltage IC = 10 mA, IB = 012V
V(BR)CES Collector-Base Breakdown Voltage IC = 10
µ
A, IE = 0 20 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100
µ
A, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 10 V, IE = 0
VCB = 10 V, IE = 0, TA = 125°C100
5.0 nA
µ
A
ON CHARACTERISTICS
hFE DC Current Gain IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
25
40
25 120
VCE(sat)Collector-Emitter Satura tion Volta g e IC = 10 mA, IB = 0.3 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.3
0.25
0.4
V
V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.7 0.85
1.2 V
V
Symbol Parameter Test Conditions Min Max Units
SMALL SIGNAL CHARACTERISTICS
fTTransition Frequency IC = 10 mA, VCE = 10 V,
f = 100 MHz 400 MHz
Ccb Collector-Base Capacitance IE = 0, VCB = 5.0 V, f = 1.0 MHz 4.0 pF
Ceb Emitter-Base Capacita n ce IC = 0, VEB = 1.0 V, f = 1.0 MHz 4.5 pF
SWITCHING CHARACTERISTICS
tsStorage Time IB1 = IB2 = IC = 10 mA 13 ns
ton Turn-On Time VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA 12 ns
toff Turn-Off Time VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA, IB2 = 1.5 mA 18 ns
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
NPN Switching Transistor
(continued)
BSV52
Typical Characteristics
DC Cur rent Gain
vs Colle ct or Curre nt
0.01 0.1 1 10 100
50
100
150
200
I - COLLE CTOR CURRENT (mA)
h - DC C UR REN T GAIN
FE
C
V = 1 .0V
CE
- 40 °C
25 ° C
125 °C
Col lec to r-Emi tte r Satu rati on
Vo lt age vs C o llector Cu rrent
0.1 1 10 100 500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
- 40 °C
25 °C
C
β= 10
125 °C
Base-Emi tter ON Voltage vs
Colle ct or Cur rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VO LTAG E (V)
BE(O N)
C
V = 1.0V
CE
- 40°C
25 °C
125 °C
B ase-E mitter Saturati o n
Voltage vs Collector Current
0.1 1 10 100 300
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (mA)
V - BASE-EMIT TER VOLTAG E (V)
BESAT
C
β= 10
- 40 °C
25 °C
125 °C
Co llector-Cu to ff Cur rent
vs Amb ien t Temperatur e
25 50 75 100 125 150
1
10
100
600
T - AM BIE NT TEM P ERA TUR E ( C)
I - COLLECTOR CURR ENT (nA)
A
V = 20V
CB
°
CBO
BSV52
NPN Switching Transistor
(continued)
3
BSV52
NPN Switching Transistor
(continued)
Typical Characteristics (continued)
Outpu t Capacitance vs
Reverse Bias Voltage
0.1 0.5 1 5 10 50
0
1
2
3
4
5
REVERSE B IAS VO LTAGE (V)
CAPACITANCE (pF)
C
ibo
C
obo
F = 1.0MHz
Sw itching Tim e s vs
Coll e ctor Current
2 5 10 20 50 100 300
1
2
5
10
20
50
100
I - COLLECTOR CURRENT (m A)
SW ITCH ING TIMES (n s )
I = 10 I = I = 10
V = 3.0 V
CC
C
t
s
t
s
t
f
t
s
t
s
t
s
t
s
t
s
t
d
t
s
t
s
t
r
C B1 B2
Storage Time vs Tu rn On
an d Turn Off Ba se Currents
0246810
-12
-10
-8
-6
-4
-2
0
I - TURN ON BAS E CU R R E NT (mA)
I - TURN OFF BASE CURRENT (mA)
6.0 ns
4.0 ns
I = 10 mA
C
V = 3.0 V
CC
t = 3.0 ns
s
B1
B2
Storage Time vs Tu rn On
an d Turn Off Ba se Currents
0246810
-12
-10
-8
-6
-4
-2
0
I - TURN ON BAS E CU R R E NT (mA)
I - TURN OFF BASE CURRENT (mA)
6.0 ns
4.0 ns
I = 10 mA
C
V = 3.0 V
CC
t = 3.0 ns
s
B1
B2
Storage Time vs Turn On
an d Turn Off Base Currents
0 5 10 15 20 25 30
-30
-25
-20
-15
-10
-5
0
I - TURN ON BASE CURRENT (mA)
I - TURN OFF BASE CURRENT (mA)
I = 100 mA
C
V = 3.0 V
CC
t = 3.0 ns
4. 0 ns
6. 0 ns 8.0 ns
16.0 ns
B1
B2
S
Switchin g Times vs
Amb ient Temperatur e
25 50 75 100
0
2
4
6
8
10
12
T - AM BIENT TEMPE RATURE ( C)
SWITCHING TIMES (ns)
I = 10 mA, I = 3.0 mA, I = 1.5 mA, V = 3.0 V
CC
A°
t
s
t
s
t
f
t
s
t
s
t
s
t
s
t
s
t
d
t
s
t
s
t
r
C B1 B2
Typical Characteristics (continued)
R ise Time vs. T urn On Base
Curre nt and Colle c tor Curre nt
1 10 100 500
0
1
10
50
I - COLLECTOR CURREN T (mA)
I - TURN ON BASE CURRENT (mA)
C
B1
V = 3.0 V
CC
t = 2.0 ns
r
5.0 n s
10 n s 20 n s
Fall Time vs Turn On
an d Turn Off Base Cu rrent s
0246810
-6
-5
-4
-3
-2
-1
0
I - TURN ON BASE CURRENT (mA)
I - TURN OFF BASE CURRENT (mA)
I = 10 mA
C
V = 3.0 V
CC
t = 7.0 ns
f
8.0 ns
10 ns
B1
B2
Fall Time vs Turn On
and Turn Off Base Currents
024681012
-12
-10
-8
-6
-4
-2
0
I - TURN ON BASE CURRENT (mA)
I - TURN OFF BASE CURRENT (mA)
B1
B2
I = 30 m A
C
V = 3.0 V
CC
t = 2.0 n s
f
5.0 ns
4.0 ns
3.0 ns
Fall Time vs Turn On
an d Tu rn Off Base Currents
0 5 10 15 20 25 30
-30
-25
-20
-15
-10
-5
0
I - TURN ON BASE CURRENT (mA)
I - TURN OFF BASE CURRENT (mA)
B1
B2
I = 100 mA
C
V = 3.0 V
CC
t = 2.0 ns
f 8.0 ns
4.0 ns
3.0 ns
12.0 ns
Del ay Time vs B as e-Emitt er O FF
Voltage and T urn On Base Current
12 51020 50
-6
-5
-4
-3
-2
-1
0
I - TURN ON BASE CURRENT (mA)
V - BA SE- EM ITTER OFF VO LTAGE (V )
B1
BE(O)
I = 10 m A
C
V = 3.0 V
CC
t = 8.0 ns
d
4. 0 ns
5. 0 ns
3. 0 ns
P ower Diss ipati on vs
Ambient Temperature
0 255075100125150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
BSV52
NPN Switching Transistor
(continued)
3
Test Circuits
0
- 10
VIN
VIN 0.1 µµ
µµ
µF
'A'
500 ΩΩ
ΩΩ
Ω
890 ΩΩ
ΩΩ
Ω0.1 µµ
µµ
µF1 KΩΩ
ΩΩ
Ω+6V
VOUT
0
- 4V
10% VOUT
ts
10% Pulse waveform
at point ' A'
0.0023µµ
µµ
µF0.0023µµ
µµ
µF
10 µµ
µµ
µF10 µµ
µµ
µF
++
11 V 10 V
500 ΩΩ
ΩΩ
Ω91 ΩΩ
ΩΩ
Ω
Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
56 ΩΩ
ΩΩ
Ω
FIGURE 1: Charge Storage Time Measurement Circuit
toff
10%
90%
VOUT
VIN
0
VOUT
toff
VBB = 12 V
VIN = - 20.9 V
VIN
VOUT
10%
90%
VIN
0
ton ton
VBB = - 3.0 V
VIN = + 15.25 V T o sampling oscilloscope input
impedance = 50Ω
Rise Time ≤ 1 ns
Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
0.0023µµ
µµ
µF0.0023µµ
µµ
µF
0.05 µµ
µµ
µF 0.05 µµ
µµ
µF
0.1 µµ
µµ
µF0.1 µµ
µµ
µF
3.3 KΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω3.3 KΩΩ
ΩΩ
Ω
220 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
VCC = 3.0 V
VBB
FIGURE 2: tON, tOFF Measurement Circuit
BSV52
NPN Switching Transistor
(continued)
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not intended to be an exhaustive list of all such trademarks.
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As used herein:
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with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
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