DATA SHEET MICRONAS Edition Sept. 13, 2004 6251-477-2DS HAL700, HAL740 Dual Hall-Effect Sensors with Independent Outputs MICRONAS HAL700, HAL740 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Pin Connections 5 2. Functional Description 8 8 9 9 9 9 10 10 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics 14 14 16 4. 4.1. 4.2. Type Description HAL700 HAL740 18 18 18 18 18 5. 5.1. 5.2. 5.3. 5.4. Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD 20 6. Data Sheet History 2 Sept. 13, 2004; 6251-477-2DS Micronas HAL700, HAL740 DATA SHEET Dual Hall-Effect Sensors with Independent Outputs 1.2. Family Overview Release Note: Revision bars indicate significant changes to the previous edition. The types differ according to the switching behavior of the magnetic switching points at the both Hall plates S1 and S2. 1. Introduction The HAL700 and the HAL740 are monolithic CMOS Hall-effect sensors consisting of two independent switches controlling two independent open-drain outputs. The Hall plates of the two switches are spaced 2.35 mm apart. Type Switching Behavior See Page HAL700 S1: latching S2: latching 14 The devices include temperature compensation and active offset compensation. These features provide excellent stability and matching of the switching points in the presence of mechanical stress over the whole temperature and supply voltage range. HAL740 S1: unipolar north sensitive S2: unipolar south sensitive 16 The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 125 C. Latching Sensors: The output turns low with the magnetic south pole on the branded side of the package. The output maintains its previous state if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. The HAL700 and the HAL740 are available in the SMD-package SOT89B-2. Unipolar Sensors: 1.1. Features - two independent Hall-switches - distance of Hall plates: 2.35 mm - switching offset compensation at typically 150 kHz - operation from 3.8 V to 24 V supply voltage - operation with static and dynamic magnetic fields up to 10 kHz - overvoltage protection at all pins In case of a south-sensitive switch, the output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The switch does not respond to the magnetic north pole on the branded side. In case of a north-sensitive switch, the output turns low with the magnetic north pole on the branded side of the package and turns high if the magnetic field is removed. The switch does not respond to the magnetic south pole on the branded side. - reverse-voltage protection at VDD-pin - robustness of magnetic characteristics against mechanical stress - short-circuit protected open-drain outputs by thermal shut down - constant switching points over a wide supply voltage range - EMC corresponding to ISO 7637 Micronas Sept. 13, 2004; 6251-477-2DS 3 HAL700, HAL740 DATA SHEET 1.3. Marking Code 1.5. Hall Sensor Package Codes All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-2 Type Type: 700 Temperature Range K E Example: HAL700SF-K HAL700 700K 700E HAL740 740K 740E Type: 700 Package: SOT89B-2 Temperature Range: TJ = -40 C to +140 C 1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 1.6. Solderability all packages: according to IEC68-2-58 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = -40 C to +140 C During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. 1.7. Pin Connections E: TJ = -40 C to +100 C 1 VDD 3 S1-Output Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on page 18 for details. 2 S2-Output 4 GND Fig. 1-1: Pin configuration 4 Sept. 13, 2004; 6251-477-2DS Micronas HAL700, HAL740 DATA SHEET 2. Functional Description Clock The HAL700 and the HAL740 are monolithic integrated circuits with two independent subblocks each consisting of a Hall plate and the corresponding comparator. Each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. If a magnetic field with flux lines perpendicular to the sensitive area is present, the biased Hall plate generates a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The subblocks are designed to have closely matched switching points. The output of comparator 1 attached to S1 controls the open drain output at Pin 3. Pin 2 is set according to the state of comparator 2 connected to S2. The temperature-dependent bias - common to both subblocks - increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the comparator switches to the appropriate state. The built-in hysteresis prevents oscillations of the outputs. The magnetic offset caused by mechanical stress is compensated for by use of "switching offset compensation techniques". Therefore, an internal oscillator provides a two-phase clock to both subblocks. For each subblock, the Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Shunt protection devices clamp voltage peaks at the output pins and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V. Fig. 2-2 and Fig. 2-3 on page 6 show how the output signals are generated by the HAL700 and the HAL740. The magnetic flux density at the locations of the two Hall plates is shown by the two sinusodial curves at the top of each diagram. The magnetic switching points are depicted as dashed lines for each Hall plate separately. Micronas t BS1 BS1on t BS2 BS2on t Pin 2 VOH VOL t Pin 3 VOH VOL t IDD t 1/fosc tf tf Fig. 2-1: HAL700 timing diagram with respect to the clock phase Sept. 13, 2004; 6251-477-2DS 5 HAL700, HAL740 DATA SHEET HAL700 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Output Pin 3 S2 Output Pin 2 0 time Fig. 2-2: HAL700 timing diagram HAL740 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Output Pin 3 S2 Output Pin 2 0 time Fig. 2-3: HAL740 timing diagram 6 Sept. 13, 2004; 6251-477-2DS Micronas HAL700, HAL740 DATA SHEET 1 VDD Reverse Voltage and Overvoltage Protection Temperature Dependent Bias Short Circuit and Overvoltage Protection Hysteresis Control Hall Plate 1 Comparator 3 Switch Output S1-Output S1 Hall Plate 2 Comparator 2 Clock Output Switch S2-Output S2 4 GND Fig. 2-4: HAL700 and HAL740 block diagram Micronas Sept. 13, 2004; 6251-477-2DS 7 HAL700, HAL740 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3-1: SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Weight approximately 0.039 g 8 Sept. 13, 2004; 6251-477-2DS Micronas HAL700, HAL740 DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-2 x1+x2 (2.350.001) mm x1=x2 1.175 mm nominal y 0.975 mm nominal 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -15 281) V VO Output Voltage 2, 3 -0.3 281) V IO Continuous Output Current 2, 3 - 201) mA TJ Junction Temperature Range -40 170 C 1) as long as TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%. Micronas Sept. 13, 2004; 6251-477-2DS 9 HAL700, HAL740 DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit VDD Supply Voltage 1 3.8 - 24 V IO Continuous Output Current 3 0 - 10 mA VO Output Voltage (output switch off) 3 0 - 24 V 3.6. Characteristics at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions IDD Supply Current 1 3 5.5 9 mA TJ = 25 C IDD Supply Current over Temperature Range 1 2 7 10 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 2 ms VOZ Overvoltage Protection at Output 2, 3 - 28 32 V IO = 20 mA, TJ = 25 C, t = 15 ms VOL Output Voltage 2, 3 - 130 280 mV IOL = 10 mA, TJ = 25 C VOL Output Voltage over Temperature Range 2, 3 - 130 400 mV IOL = 10 mA IOH Output Leakage Current 2, 3 - 0.06 0.1 A Output switched off, TJ = 25 C, VOH = 3.8 V to 24 V IOH Output Leakage Current over Temperature Range 2, 3 - - 10 A Output switched off, TJ 140 C, VOH = 3.8 V to 24 V fosc Internal Sampling Frequency over Temperature Range - 100 150 - kHz ten(O) Enable Time of Output after Setting of VDD 1 - 50 - s VDD = 12 V, B>Bon + 2 mT or B<Boff - 2 mT tr Output Rise Time 2, 3 - 0.2 - s VDD = 12 V, RL = 2.4 k, CL = 20 pF tf Output FallTime 2, 3 - 0.2 - s VDD = 12 V, RL = 2.4 k, CL = 20 pF RthJSB case SOT89B-2 Thermal Resistance Junction to Substrate Backside - - 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size 10 Sept. 13, 2004; 6251-477-2DS Micronas HAL700, HAL740 DATA SHEET mA 25 mA 6 HAL 7xx HAL 7xx 20 IDD IDD TA = -40 C 15 5 TA = 25 C VDD = 24 V VDD = 12 V TA=140 C 10 5 4 0 VDD = 3.8 V -5 3 -10 -15 -15-10 -5 0 2 -50 5 10 15 20 25 30 35 V 0 50 VDD TA Fig. 3-2: Typical supply current versus supply voltage mA 6.0 IDD Fig. 3-4: Typical supply current versus ambient temperature kHz 190 HAL 7xx 5.5 150 C 100 HAL 7xx TA = -40 C 5.0 fosc 180 TA = 25 C 4.5 4.0 TA = 100 C 170 3.5 TA = 140 C 3.0 2.5 160 VDD = 3.8 V 2.0 1.5 150 1.0 VDD = 4.5 V...24 V 0.5 0 1 2 3 4 5 6 7 140 -50 8 V VDD Fig. 3-3: Typical supply current versus supply voltage Micronas 0 50 100 150 200 C TA Fig. 3-5: Typ. internal chopper frequency versus ambient temperature Sept. 13, 2004; 6251-477-2DS 11 HAL700, HAL740 DATA SHEET kHz 240 mV 400 HAL 7xx HAL 7xx IO = 10 mA 350 fosc 220 VOL 300 200 250 180 TA = 140 C 200 TA = 100 C TA = 25 C 160 150 TA = 25 C TA = -40 C TA = 140 C TA = -40 C 100 140 50 120 0 5 10 15 20 25 0 30 V 0 5 10 15 20 25 VDD VDD Fig. 3-6: Typ. internal chopper frequency versus supply voltage kHz 240 fosc 30 V Fig. 3-8: Typical output low voltage versus supply voltage mV 400 HAL 7xx 220 HAL 7xx IO = 10 mA VOL 300 200 180 TA = 140 C 200 TA =100 C TA = 25 C 160 TA = 25 C TA = -40 C 3 3.5 4.0 4.5 5.0 5.5 0 6.0 V VDD 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 3-7: Typ. internal chopper frequency versus supply voltage 12 TA = -40 C TA = 140 C 140 120 100 Fig. 3-9: Typical output low voltage versus supply voltage Sept. 13, 2004; 6251-477-2DS Micronas HAL700, HAL740 DATA SHEET mV 300 HAL 7xx A HAL 7xx 102 IO = 10 mA VDD = 3.8 V 101 250 VOL VDD = 4.5 V VDD = 24 V 200 IOH 100 10-1 150 10-2 100 VOH = 3.8 V 10-3 50 10-4 VOH = 24 V 0 -50 0 50 100 150 C 10-5 -50 TA 50 100 150 200 C TA Fig. 3-10: Typ. output low voltage versus ambient temperature A 0 Fig. 3-12: Typical output leakage current versus ambient temperature HAL 7xx 102 101 IOH 100 TA = 140 C 10-1 10-2 TA = 100 C 10-3 10-4 TA = 25 C 10-5 10-6 15 20 25 30 35 V VOH Fig. 3-11: Typical output leakage current versus output voltage Micronas Sept. 13, 2004; 6251-477-2DS 13 HAL700 DATA SHEET Magnetic Thresholds (quasistationary: dB/dt<0.5 mT/ms) 4. Type Description 4.1. HAL700 The HAL700 consists of two independent latched switches (see Fig. 4-1) with closely matched magnetic characteristics controlling two independent open-drain outputs. The Hall plates of the two switches are spaced 2.35 mm apart. In combination with an active target providing a sequence of alternating magnetic north and south poles, the sensor forms a system generating the signals required to control position, speed, and direction of the target movement. Magnetic Features at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Typical characteristics for TJ = 25 C and VDD = 5 V Parameter On-Point BS1on, BS2on Off-Point BS1off,, BS2off Unit Tj Min. Typ. Max. Min. Typ. Max. -40 C 12.5 16.3 20 -20 -16.3 -12.5 mT 25 C 10.7 14.9 19.1 -19.1 -14.9 -10.7 mT 100 C 7.7 12.5 17.3 -17.3 -12.5 -7.7 mT 140 C 6.0 10.9 16.0 -16.0 -10.9 -6.0 mT - two independent Hall-switches - distance of Hall plates: 2.35 mm - typical BON: 14.9 mT at room temperature - typical BOFF: -14.9 mT at room temperature Matching BS1 and BS2 (quasistationary: dB/dt<0.5 mT/ms) - temperature coefficient of -2000 ppm/K in all magnetic characteristics at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified - operation with static magnetic fields and dynamic magnetic fields up to 10 kHz Typical characteristics for TJ = 25 C and VDD = 5 V VO BHYS VOL BOFF 0 BS1on - BS2on Parameter Output Voltage B BON BS1off - BS2off Unit Tj Min. Typ Max. Min. Typ Max. -40 C -7.5 0 7.5 -7.5 0 7.5 mT 25 C -7.5 0 7.5 -7.5 0 7.5 mT 100 C -7.5 0 7.5 -7.5 0 7.5 mT 140 C -7.5 0 7.5 -7.5 0 7.5 mT Fig. 4-1: Definition of magnetic switching points for the HAL700 Hysteresis Matching (quasistationary: dB/dt<0.5 mT/ms) Positive flux density values refer to magnetic south pole at the branded side of the package. Applications Typical characteristics for TJ = 25 C and VDD = 5 V The HAL700 is the ideal sensors for position-control applications with direction detection and alternating magnetic signals such as: - multipole magnet applications, - rotating speed and direction measurement, position tracking (active targets), and - window lifters. 14 at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Parameter Tj (BS1on - BS1off) / (BS2on - BS2off) Unit Min. Typ. Max. -40 C 0.85 1.0 1.2 - 25 C 0.85 1.0 1.2 - 100 C 0.85 1.0 1.2 - 140 C 0.85 1.0 1.2 - Sept. 13, 2004; 6251-477-2DS Micronas HAL700 DATA SHEET mT 20 mT 25 HAL 700 BON 15 BOFF HAL 700 20 BON BOFF 15 BON BONmax 10 5 TA = -40 C TA = 25 C 0 BONtyp 5 BONmin VDD = 3.8 V 0 TA =100 C VDD = 4.5 V... 24 V TA = 140 C -5 10 -5 BOFFmax -10 BOFFtyp -10 -15 -20 -20 0 5 10 15 20 25 -25 -50 30 V Fig. 4-2: Magnetic switching points versus supply voltage mT 20 0 50 100 150 C TA, TJ VDD BON BOFF BOFFmin BOFF -15 Fig. 4-4: Magnetic switching points versus ambient temperature HAL 700 15 BON 10 5 TA = -40 C TA = 25 C 0 TA = 100 C TA = 140 C -5 -10 -15 -20 BOFF 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-3: Magnetic switching points versus supply voltage Micronas Sept. 13, 2004; 6251-477-2DS 15 HAL740 DATA SHEET 4.2. HAL740 Applications The HAL740 consists of two independent unipolar switches (see Fig. 4-5) with complementary magnetic characteristics controlling two independent open-drain outputs. The Hall plates of the two switches are spaced 2.35 mm apart. The HAL740 is the ideal sensor for applications which require both magnetic polarities, such as: - position and direction detection, or - position and end point detection with either magnetic pole (omnipolar switch). The S1-Output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. Output Voltage VO The S2-Output turns low with the magnetic north pole on the branded side of the package and turns high if the magnetic field is removed. It does not respond to the magnetic south pole on the branded side. BHYS BHYS VOL BON,S2 BOFF,S2 Magnetic Features - two independent Hall-switches BOFF,S1 BON,S1 0 B Fig. 4-5: Definition of magnetic switching points for the HAL740 - distance of Hall plates: 2.35 mm - temperature coefficient of -2000 ppm/K in all magnetic characteristics - operation with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics (quasistationary: dB/dT < 0.5 T/ms) at TJ = -40 C to +100 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V. Absolute values common to both Hall switches. The Hall switches S1 and S2 only differ in sign. For S1 the sign is positive, for S2 negative. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point BON TJ Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C 8.5 12.3 16.0 5.0 8.8 12.5 2.0 - 5.5 - 10.6 - mT 25 C 7.0 11.5 16.0 3.5 8.0 12.5 2.0 - 6.0 - 9.8 - mT 100 C 5.5 10.8 16.0 2.0 7.0 12.5 1.5 - 6.5 - 8.9 - mT 140 C 4.6 10.4 16.0 1.1 6.8 12.5 1.0 - 7.0 - 8.6 - mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 16 Sept. 13, 2004; 6251-477-2DS Micronas HAL740 DATA SHEET mT 16 mT 20 HAL 740 HAL 740 VDD = 3.8 V BON BOFF 14 VDD = 4.5 V... 24 V BON BOFF BON BONmax 15 TA = -40 C TA = 25 C 12 BOFFmax BONtyp TA =100 C 10 TA = 140 C 10 BOFF BOFFtyp 5 BONmin 8 BOFFmin 6 0 5 10 15 20 25 0 -50 30 V 50 100 150 C TA, TJ VDD Fig. 4-6: Magnetic switching points versus supply voltage mT 16 0 Fig. 4-8: Magnetic switching points versus ambient temperature HAL 740 BON BOFF 14 BON TA = -40 C 12 TA = 25 C TA = 100 C TA = 140 C 10 BOFF 8 6 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-7: Magnetic switching points versus supply voltage Micronas Sept. 13, 2004; 6251-477-2DS 17 HAL700, HAL740 DATA SHEET 5. Application Notes 5.3. Start-up Behavior 5.1. Ambient Temperature Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the "Characteristics" (see Section 3.6. on page 10). Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). During the initialization time, the output states are not defined and the outputs can toggle. After ten(O), both outputs will be either high or low for a stable magnetic field (no toggling). The outputs will be low if the applied magnetic flux density B exceeds BON and high if B drops below BOFF. TJ = TA + T At static conditions and continuous operation, the following equation applies: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For magnetic fields between BOFF and BON, the output states of the Hall sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic flux density must be above BONmax, respectively, below BOFFmin. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: 5.4. EMC and ESD For applications that cause disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-1). The series resistor and the capacitor should be placed as closely as possible to the Hall sensor. TAmax = TJmax - T 5.2. Extended Operating Conditions Please contact Micronas for detailed investigation reports with EMC and ESD results. All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see Section 3.5. on page 10). WARNING: Supply Voltage Below 3.8 V DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS. Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas. RV 220 RL 1 VDD 2.4 k RL 2.4 k 3 S1-Output VEMC VP 2 S2-Output 4.7 nF 20 pF 20 pF 4 GND Fig. 5-1: Test circuit for EMC investigations 18 Sept. 13, 2004; 6251-477-2DS Micronas HAL700, HAL740 DATA SHEET Micronas Sept. 13, 2004; 6251-477-2DS 19 HAL700, HAL740 DATA SHEET 6. Data Sheet History 1. Data sheet: "HAL700, HAL740 Dual Hall-Effect Sensors with Independent Outputs", June 13, 2002, 6251-477-1DS. First release of the data sheet. 2. Data Sheet: "HAL700, HAL740 Dual Hall-Effect Sensors with Independent Outputs", Sept. 13, 2004, 6251-477-2DS. Second release of the data sheet. Major changes: - new package diagram for SOT89B-2 Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-477-2DS 20 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Sept. 13, 2004; 6251-477-2DS Micronas