VT RVT
HIGH VOLTAGE 50 mA
SILICON RECTIFIERS
EDI
Type
PRV
Volts
REVERSE RECOVERY TIME
(Fig.4)
VT1000 10,000 -
VT1200 12,000 -
VT1500 15,000 -
RVT1000 10,000 100 ns max.
RVT1200 12,000 100 ns max.
RVT1500 15,000 100 ns max.
ELECTRICAL CHARACTERISTICS (at TA=25 C Unless Otherwise Specified)
Average Rectified Forward Current @ 50 oC, IO50 mA
Max. Peak Surge Current, IFSM (8.3ms) 5 Amp
Max. Forward Voltage Drop @ 50 mA, VF28Volts
Max. DC Reverse Current @ PRV and 25
oC, IR1
Max. DC Reverse Current @ PRV and100oC, IR25
Ambient Operating Temperature Range, T
A
Storage Temperature Range, T
STG
NOTES:
o
A
A
SMALL SIZE MOLDED PACKAGE
PRV 10,000 TO 15,000 VOLTS
FAST RECOVERY (R_SERIES)
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
-55 to + 125 C
o
-55 to + 150 C
o
1.It is recommended that a proper heat sink be used on the terminals of this device between the body and
soldering point to prevent damage from excess heat.
2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.
EDI reserves the right to change these specifications at any time without notice.
100
75
50
25
0
0 25 50 75 100 125 150
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
FIG.2
NON- REPETITIVE SURGE CURRENT
0.1SEC 1.0SEC
100
75
50
25
0
1 2 345
6
7 9 10 20 30 40 50 608
CYCLES(60 Hz)
VT RVT
FIG.3
21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
AMBIENT TEMPERATURE O
( C)
% MAXIMUM SURGE
REVERSE RECOVERY TEST METHOD
C
MIN.
A LEAD DIA.
B
D
MECHANICAL
Leads-solid silver
Markings-Cathode band
and device type
FIG.4
INCHES MM
A 0.02 0.5
B 0.60 15.2
C 0.50 12.7
D 0.16 4.0
RECOVERY WAVE FORM RECOVERY WA VE FORM
IF=2MA
rr
D.U.T.
SCOPE
50
N I
N I
IR=5MA
T
IRR=1MA
WAVE FORMS
PULSE
GENERATOR
CIRCUIT
1000
0.1
Ee-mail:sales@edidiodes.com Wwebsite: http://www.edidiodes.com
*
% RATED FWD CURRENT
+
-
