TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
T4-LDS-0016 Rev. 1 (072040) Page 1 of 2
DEVICES LEVELS
2N3506 2N3507 JAN
2N3506A 2N3507A JANTX
2N3506L 2N3507L JANTXV
2N3506AL 2N3507AL
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3506 2N3507 Unit
Collector-Emitter Voltage VCEO 40 50 Vdc
Collector-Base Voltage VCBO 60 80 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 3.0 Adc
Total Power Dissipation @ TA = 25°C (1)
@ TC = 25°C (2) PT 1.0
5.0 W
Operating & Storage Temperature Range Top, Tstg -65 to +200 °C
Note:
1) Derate linearly 5.71 mW/°C for TA > +25°C
2) Derate linearly 55.5 mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc 2N3506
2N3507
V(BR)CEO
40
50
Vdc
Collector-Emitter Cutoff Current
VCE = 40Vdc
VCE = 60Vdc
2N3506
2N3507
ICEX
1.0
1.0
µAdc
Collector-Base Breakdown Voltage
IC = 100µAdc V(BR)CBO 60
80 Vdc
Emitter-Base Breakdown Voltage
IE = 10µAdc V(BR)EBO 5 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1Vdc
2N3506
2N3507 hFE 50
35
250
175
Forward-Current Transfer Ratio
IC = 1.5Adc, VCE = 2Vdc
2N3506
2N3507 hFE 40
30
200
150
Forward-Current Transfer Ratio
IC = 2.5Adc, VCE = 3Vdc
2N3506
2N3507 hFE 30
25
TO-5 (L-Versions)
TO-39 (TO-205-AD)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
T4-LDS-0016 Rev. 1 (072040) Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 3.0Adc, VCE = 5Vdc
2N3506
2N3507 hFE 25
20
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1.0Vdc
2N3506
2N3507 hFE 25
17
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 2Vdc
2N3506A
2N3507A hFE 25
17
Collector-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc VCE(sat) 0.5 Vdc
Collector-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc VCE(sat) 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc VCE(sat) 1.5 Vdc
Base-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc VBE(sat) 1.0 Vdc
Base-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc VBE(sat) 0.8 1.3 Vdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc VBE(sat) 2.0 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 20MHz
|hfe| 3.0 15
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 40 pF
Input Capacitance
VEB = 3.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 300 pF
SWITCHING CHARACTERISTICS (4)
Parameters / Test Conditions Symbol Min. Max. Unit
Delay Time
IC = 1.5Adc, IB1 = 150mAdc td 15 ns
Rinse Time
IC = 1.5Adc, IB1 = 150mAdc tr 30 ns
Storage Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc ts 55 ns
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc tf 35 ns
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
(4) Consult MIL-PRF-19500/349 For Additional Infornation.
