BUXD87
HIGH VOLTAGE NPN POWER TRANSISTOR
■REVERSEPINS OUT Vs STANDARD
IPAK/DPAKPACKAGE
■HIGH VOLTAGECAPABILITY
■HIGH DCCURRENT GAIN
■THROUGH-HOLE IPAK (TO-251) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
■SURFACE-MOUNTING DPAK (TO-252)
POWERPACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS:
■SWITCH MODE POWER SUPPLIES
■GENERALPURPOSESWITCHING
DESCRIPTION
The BUXD87 is manufacturedusing High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -1.5V) 1000 V
VCEO Collector-Emitter Voltage (IB= 0) 450 V
VEBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 0.5 A
ICM Collector Peak Current (tp<5ms) 1 A
I
BBase Current 0.3 A
IBM Base Peak Current (tp<5ms) 0.6 A
P
tot Total Dissipation at Tc=25o
C20W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
3
2
1
IPAK DPAK
TO-251 TO-252
(Suffix ”-1”) (Suffix ”T4”)
13
1/6
THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE =-1.5V) V
CE = 1000 V
VCE = 1000 V Tj=125o
C100
1µA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 1 mA
V
CEO(sus) Collector-Emitter
Sustaining Voltage IC= 100 mA 450 V
VBEO Collector-Base
Sustaining Voltage IC=10mA 5 V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=0.1A I
B=0.01A
I
C=0.2A I
B=0.02A 0.8
1V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC=0.2A I
B=0.02A 1 V
h
FE∗DC Current Gain IC=50mA V
CE =5V
I
C=40mA V
CE =5V 12 50
fTTransition Frequency IC=50mA V
CE =10V f=1MHz 20 MHz
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
VCC = 250 V IC=200mA
I
B1 =40mA I
B2=-80mA
t
p=20µs4.5
0.5 µs
µs
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Derating Curves
BUXD87
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DCCurrent Gain
Collector Emitter SaturationVoltage
ReverseBiased SOA
DC Current Gain
BaseEmitter Saturation Voltage
BUXD87
3/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A3 0.70 1.30 0.028 0.051
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
B3 0.85 0.033
B5 0.30 0.012
B6 0.95 0.037
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.237 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 15.90 16.30 0.626 0.642
L 9.00 9.40 0.354 0.370
L1 0.80 1.20 0.031 0.047
L2 0.80 1.00 0.031 0.039
V1 10o10o
P032N_E
TO-251 (IPAK) MECHANICAL DATA
BUXD87
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0o8o0o0o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
BUXD87
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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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