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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Ordering Information
BiFET HBT
LDMOS
13
2
4
RF OUTRF IN
GND
GND
MARKING - N5
NBB-500
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
The NBB-500 cascadable broadband InGaP/GaAs MMIC amplifier is a
low-cost, high-performance solution for general purpose RF and micro-
wave amplification needs. This 50 gain block is based on a reliable HBT
proprietary MMIC design, providing unsurpassed performance for small-
signal applications. Designed with an external bias resistor, the NBB-500
provides flexibility and stability. The NBB-500 is packaged in a low-cost,
surface-mount ceramic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements. It is available in either packaged or chip
(NBB-500-D) form, where its gold metallization is ideal for hybrid circuit
designs.
Features
Reliable, Low-Cost HBT
Design
19.0dB Gain, +12.3dBm
P1dB@2GHz
High P1dB of
+14.0dBm@6.0GHz
Single Power Supply
Operation
50 I/O Matched for High
Freq. Use
Applications
Narrow and Broadband
Commercial and Military
Radio Designs
Linear and Saturated
Amplifiers
Gain Stage or Driver
Amplifiers for
MWRadio/Optical Designs
(PTP/PMP/LMDS/UNII/VSAT
/WLAN/Cellular/DWDM)
NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
NBB-500 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
NBB-500-T1 Tape & Reel, 1000 Pieces
NBB-500-D NBB-500 Chip Form (100 pieces minimum order)
NBB-500-E Fully Assembled Evaluation Board
NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit
DS120130
NBB-500Cas-
cadable
Broadband
GaAs MMIC
Amplifier DC to
4GHz
Package Style: Micro-X, 4-Pin, Ceramic
2 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter Rating Unit
RF Input Power +20 dBm
Power Dissipation 300 mW
Device Current 70 mA
Channel Temperature 150 °C
Operating Temperature -45 to +85 °C
Storage Temperature -65 to +150 °C
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter Specification Unit Condition
Min. Typ. Max.
Overall VD=+3.9V, ICC=35mA, Z0=50, TA=+25°C
Small Signal Power Gain, S21 19.0 20.5 dB f=0.1GHz to 1.0GHz
19.5 dB f=1.0GHz to 2.0GHz
16.0 18.5 dB f=2.0GHz to 4.0GHz
Gain Flatness, GF ±0.8 dB f=0.1GHz to 3.0GHz
Input and Output VSWR 1.70:1 f=0.1GHz to 4.0GHz
1.45:1 f=4.0GHz to 6.0GHz
1.65:1 f=6.0GHz to 10.0GHz
Bandwidth, BW 4.2 GHz BW3 (3dB)
Output Power @
-1dB Compression, P1dB 12.3 dBm f=2.0GHz
14.0 dBm f=6.0GHz
Noise Figure, NF 3.2 dB f=3.0GHz
Third Order Intercept, IP3 +26.5 dBm f=2.0GHz
Reverse Isolation, S12 -17.0 dB f=0.1GHz to 10.0GHz
Device Voltage, VD 3.6 3.9 4.2 V
Gain Temperature Coefficient,
GT/T
-0.0015 dB/°C
MTTF versus Temperature
@ ICC=35mA
Case Temperature 85 °C
Junction Temperature 120 °C
MTTF >1,000,000 hours
Thermal Resistance
JC 256 °C/W
JTTCASE
–
VDICC
---------------------------JC CWatt=
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended applica-
tion circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
3 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Package Drawing
Pin Function Description Interface Schematic
1RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
2GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
Care should also be taken in the resistor selection to ensure that the cur-
rent into the part never exceeds maximum datasheet operating current
over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply near
5.0V is available, to provide DC feedback to prevent thermal runaway.
Because DC is present on this pin, a DC blocking capacitor, suitable for the
frequency of operation, should be used in most applications. The supply
side of the bias network should also be well bypassed.
4GND
Same as pin 2.
RVCC VDEVICE
–
ICC
-------------------------------------------=
RF OUT
RF IN
UNITS:
Inches
(mm)
N5
0.070
(1.78)
0.040
(1.02)
0.020
0.200 sq.
(5.08)
45° 0.055
(1.40)
0.005
(0.13)
4 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
Recommended Bias Resistor Values
Supply Voltage, VCC (V)5 8 10121520
Bias Resistor, RCC () 31 117 174 231 317 460
C block
1 3
4
2VDEVICE
C block
In Out
L choke
(optional)
RCC
VCC
VD = 3.9 V
5 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Chip Outline Drawing - NBB-500-D
Chip Dimensions: 0.017” x 0.017” x 0.004”
Sales Criteria - Unpackaged Die
Die Sales Information
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego-
tiated on a case-by-case basis.
• Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product
Final Visual Inspection Criteria1.
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allow-
able.
Die Packaging
• All die are packaged in GelPak ESD protec tive containers with the follow ing specification:
O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X0).
• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a controlled nitrog en environment. Do not press on the cover of a closed
GelPak, handle by the edges only. Do no t vac uum seal bags containing GelPak containers.
• Precaution mus t be taken to minimize vibration of packag in g duri n g ha nd lin g, as die can shift duri n g transit 2.
Package Storage
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
• Precaution mus t be taken to minimize vibration of packag in g duri n g ha nd lin g, as die can shift duri n g transit2.
Die Handling
• Proper ESD precautions must be taken when handling die material.
• Die should be handled using vacuum pick-up equipment, or handled al ong the long side with a sharp pair of twee-
zers. Do not touch die with any part of the body.
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devic es .
INPUTOUTPUT
GND
VIA
0.017 ± 0.001
(0.44 ± 0.03)
0.017 ± 0.001
(0.44 ± 0.03) 0.004 ± 0.001
(0.10 ± 0.03)
UNITS:
Inches
(mm) Back of chip is ground.
6 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Die Attach
• The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die
attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the
thermal path by which heat can leave the chip.
• Die should be mounted to a clean, flat surfac e. Epox y or eutectic die attach are both acceptable attachment meth-
ods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure
involves the use o f ep ox y to form a joint between the backside gold of the chip and the metallized area of the sub-
strate.
• All connections should be made on the topside of the die. It is essential to performance that the backside be well
grounded and tha t the length of topside interconnects be minimized.
• Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out
on the topside.
Die Wire Bonding
• Electrical conne ctions to the chip are made through wire bonds. Either wedge or ball bonding methods are accept-
able practices for wire bonding.
• All bond wires should be made as short as possible.
Notes
1RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die inspec-
tion personnel to determine final visual acceptance of die product prior to shipping to customers.
2RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to minimize
material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will not shift dur-
ing transit, especially under extreme handling circumstances. Product replacement due to material shift will be at the discre-
tion of RFMD.
7 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool
kit contains the following.
• 5 each NBB-300, NBB-31 0 and NBB-400 Ceramic Micro-X Amplifier s
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluatio n Boa rds and High Frequency SMA Connectors
• Broadband Bias Instructions and Specification Summary Index for ease of operation
8 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Tape and Reel Dimensions
All Dimensions in Millimeters
Carrier tape basic dimensions are based on EIA 481. The pocket is designed to hold the part for shipping and loading onto SMT
manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket
design can vary from vendor to vendor, but width and pitch will be consistent.
Carrier tape is wound or placed onto a shipping reel 178 mm (7 inches) in diameter. The center hub design is large enough to
ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts.
Prior to shipping, moisture sensitive parts (MSL Level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover
tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier ESD bag with the
appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. It is important to
note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure
limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required,
devices may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDEC J-STD-033.
Table 1 provides useful information for carrier tape and reels used for shipping the devices described in this document.
Table 1. Tape and Reel
RFMD Part Number
Reel
Diameter
Inch (mm)
Hub
Diameter
Inch (mm)
Width
(mm)
Pocket Pitch
(mm) Feed Units per
Reel
NBB-500 7 (178) 2.4 (61) 12 8 Single 1000
Figure 1. Carrier Tape Drawing with Part Orientation
9 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss
variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S11 versus Frequency, Over Temperature
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fr equency (GHz)
S11 (dB)
+25 C
-40 C
+85 C
S12 versus Frequency, Over Temperature
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fre quency (GHz)
S12 (dB)
+25 C
-40 C
+85 C
S21 versus Frequency, Over Temperature
-40.0
-30.0
-20.0
-10.0
0.0
10.0
20.0
30.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fr equency (GHz)
S21 (dB)
+25 C
-40 C
+85 C
S22 versus Frequency, Over Temperature
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fre quency (GHz)
S22 (dB)
+25 C
-40 C
+85 C
10 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Device Voltage versus Amplifier Current
3.85
3.90
3.95
4.00
20.00 25.00 30.00 35.00 40.00 45.00 50.00
Amplifier Current, ICC (mA)
Device Voltage, VD (V)
P1dB versus Frequency at 25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
1.0 2.0 3.0 4.0 5.0 6.0
Fr equency (GHz)
P1dB (dBm)
POUT/Gain versus PIN at 2 GHz
0.0
5.0
10.0
15.0
20.0
25.0
-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout ( d Bm )
Gain (dB)
POUT/Gain versus PIN at 6 GHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout ( d Bm )
Gain (dB)
Third Order Intercept versus Frequency at 25°C
0.0
5.0
10.0
15.0
20.0
25.0
30.0
1.0 2.0 3.0 4.0 5.0 6.0
Fre quency (GHz)
Output IP3 (dBm)
11 of 11
NBB-500
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
RoHS Compliant: Yes
Package total weight in grams (g): 0.019
Compliance Date Code: 0536
Bill of Materials Revision: -
Pb Free Category: e3
Pb Cd Hg Cr VI PBB PBDE
Die 000000
Molding Compound 000000
Lead Frame 000000
Die Attach Epoxy 000000
Wire 000000
Solder Plating 000000
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the
use of certain hazardous substances in electrical and electronic equipment
RoHS* Banned Material Content
Bill of Materials Parts Per Million (PPM)
This RoHS banned material content declaration was prepared solely on information, including analytical
data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted