Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB521SM-30
lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm)
Small current rectification
lFeatures
1)Ultra small mold type. (EMD2)
2)Low VF
3)High reliability
lConstruction
Silicon epitaxial
lStructure
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta=25°C)
Symbol Unit
VRV
Io mA
IFSM A
Tj °C
Tstg °C
lElectrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
VF1 - - 0.47 V IF=200mA
VF2 - - 0.41 V IF=100mA
IR- - 30 μA VR=10V
Parameter
Limits
Reverse voltage (DC)
30
Average rectified forward current
200
Parameter
Forward voltage
Reverse current
Forward current surge peak (60Hz・1cyc)
1
Junction temperature
150
Storage temperature
-40 to +150
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.6±0.1
EMD2
0.8
1.7
0.6
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
dot (year week factory)
1/3 2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB521SM-30
0
5
10
110 100
t
Ifsm
0
5
10
110 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
25
30
35
40
45
50
Ta=25℃
VR=10V
n=30pcs
AVE:4.775uA
400
410
420
430
440
450
Ta=25℃
IF=200mA
n=10pcs
AVE:421.0mV
0.1
1
10
100
1000
0100 200 300 400 500
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
0
0.05
0.1
0.15
0.2
00.1 0.2 0.3 0.4 0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
010 20 30
Sin(θ＝180)
D=1/2
DC
1
10
100
0 5 10 15 20
25
26
27
28
29
30
31
32
33
34
35
AVE:29.58pF
0
5
10
15
20
AVE:5.60A
0.01
0.1
1
10
100
1000
10000
010 20 30
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
FORWARD VOLTAGE：VF(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR (uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:VR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
I
FSM
DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TIME:(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
REVERSE POWER
DISSIPATION : P
R
(w)
REVERSE VOLTAGE：VR(V)
VR-PR CHARACTERISTICS
Ta=25℃
f=1MHz
VR=0V
n=10pcs
f=1MHz
8.3ms
Ifsm
1cyc
DC
D=1/2
Sin(θ＝180)
2/3 2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB521SM-30
0
0.1
0.2
0.3
0.4
0.5
025 50 75 100 125 150
0
0.1
0.2
0.3
0.4
0.5
025 50 75 100 125 150
Sin(θ＝180)
D=1/2
DC
AMBIENT TEMPERATURE：Ta(℃)
DERATING CURVE (Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
CASE TEMPARATURE：Tc(℃)
DERATING CURVE (Io-Tc)
Sin(θ＝180)
D=1/2
DC
T
Tj=150℃
D=t/T
t
V
R
Io
VR=15V
0A
0V
T
Tj=150℃
D=t/T
t
V
R
Io
VR=15V
0A
0V
3/3 2011.06 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes