PD- 95304 IRF7421D1PbF FETKYa MOSFET / Schottky Diode l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free Description A A D A 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V RDS(on) = 0.035 Schottky Vf = 0.39V Top View The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25C unless otherwise noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10VA Pulsed Drain Current A Power Dissipation A Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range Maximum Units 5.8 4.6 46 2.0 1.3 16 20 -5.0 -55 to +150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Units 62.5 C/W Junction-to-Ambient A Notes: A Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) A ISD 4.1A, di/dt 110A/s, VDD V(BR)DSS, TJ 150C A Pulse width 300s; duty cycle 2% A Surface mounted on FR-4 board, t 10sec. www.irf.com 1 10/13/04 2 IRF7421D1PbF MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS RDS(on) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 -- -- 1.0 4.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- 0.026 0.040 -- -- -- -- -- -- 18 2.2 5.9 6.7 27 20 16 510 200 84 Max. Units Conditions -- V VGS = 0V, ID = 250A 0.035 VGS = 10V, ID = 4.1A 0.060 VGS = 4.5V, ID = 2.1A -- V VDS = VGS, ID = 250A -- S VDS = 15V, ID = 2.1A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, V GS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 27 ID = 4.1A 3.3 nC VDS = 24V 8.9 VGS = 10V (see figure 10) A -- VDD = 15V -- ID = 4.1A ns -- RG = 6.2 -- RD = 3.7 A -- VGS = 0V -- pF VDS = 25V -- = 1.0MHz (see figure 9) MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) -- -- 3.1 A I SM Pulsed Source Current (Body Diode) -- -- 33 VSD Body Diode Forward Voltage -- -- 1.0 V trr Reverse Recovery Time (Body Diode) -- 57 86 ns Q rr Reverse Recovery Charge -- 93 140 nC Conditions TJ = 25C, IS = 4.1A, V GS = 0V TJ = 25C, IF = 4.1A di/dt = 100A/s A Schottky Diode Maximum Ratings IF(av) I SM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 1.7 A 1.2 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C TA = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications V FM Parameter Max. Forward voltage drop IRM Max. Reverse Leakage current Ct dv/dt Max. Junction Capacitance Max. Voltage Rate of Charge 2 Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 110 pF 3600 V/ s Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 30V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR www.irf.com 2 IRF7421D1PbF Power Mosfet Characteristics 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP TOP 10 3.0V 1 0.1 20s PULSE WIDTH TJ = 25C A 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 10 0.1 V DS , Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) TJ = 150C TJ = 25C 10 V DS = 10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 6.0 10 TJ = 150C TJ = 25C VGS = 0V 1 0.4 0.8 1.2 1.6 2.0 A 2.4 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7421D1PbF R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 I D = 4.1A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A RDS (on) , Drain-to-Source On Resistance () Power Mosfet Characteristics 100 120 140 160 0.2 0.1 0.0 0 5 TJ , Junction Temperature (C) I Fig 5. Normalized On-Resistance Vs. Temperature 25 30 35 , , Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 0.06 I D , Drain Current (A) RDS (on) , Drain-to-Source On Resistance () 20 100 0.05 0.04 I = 5.8A 0.03 10 3 6 9 12 Fig 7. Typical On-Resistance Vs. Gate Voltage 15 A 100s 1ms 1 0.02 V /5 , Gate-to-Source Voltage (V) 4 15 Fig 6. Typical On-Resistance Vs. Drain Current 0.07 0.01 10 0.1 10ms TA = 25C TJ = 150C Single Pulse 0.1 1 10 A 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7421D1PbF Power Mosfet Characteristics 1000 V GS , Gate-to-Source Voltage (V) 800 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V DS = 24V V DS = 15V 16 Ciss 600 I D = 4.1A 12 Coss 400 Crss 200 0 1 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 5 VDS , Drain-to-Source Voltage (V) 10 15 20 25 30 Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 A IRF7421D1PbF Schottky Diode Characteristics 100 Reverse Current - IR (mA) Instantaneous Forward Current - IF (A) 10 10 J 1 0.01 0.001 0.0001 1 0.1 ) 0 5 10 15 20 25 30 R TJ = 150C TJ = 125C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage TJ = 25C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - VFM (V) Fig. 12 -Typical Forward Voltage Drop Characteristics Junction Capacitance - C T (pF) 1000 100 TJ = 25C A 10 0 10 20 30 Reverse Voltage - V R (V) Fig.14 - Typical Junction Capacitance Vs. Reverse Voltage 6 www.irf.com IRF7421D1PbF SO-8 (Fetky) Package Outline D DIM B 8 6 7 6 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 A 5 H E 1 6X 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] A A1 MILLIMET ERS MAX 5 A INCHES MIN MAX .025 BAS IC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] 8X c 8X L 7 C A B FOOTPRINT NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIME TER 8X 0.72 [.028] 3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCE ED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCE ED 0.25 [.010]. 7 DIMENS ION IS THE LE NGTH OF LEAD FOR S OLDERING TO A S UBS TRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) INTERNAT IONAL RECT IFIER LOGO www.irf.com XXXX 807D1 DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER 7 IRF7421D1PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com