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Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS@10VÃ5.8 A
ID @ TA = 70°C 4.6
IDM Pulsed Drain Current À46
PD @TA = 25°C Power Dissipation Ã2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt Á-5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
IRF7421D1PbF
FETKYä MOSFET / Schottky Diode
Notes:
ÀRepetitive rating; pulse width limited by maximum junction temperature (see figure 11)
ÁISD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ÂPulse width ≤ 300µs; duty cycle ≤ 2%
ÃSurface mounted on FR-4 board, t ≤ 10sec.
Parameter Maximum Units
RθJA Junction-to-Ambient Ã62.5 °C/W
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Thermal Resistance Ratings
10/13/04
The FETKY family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
lCo-packaged HEXFET® Power
MOSFET and Schottky Diode
lIdeal For Synchronous Regulator
Applications
lGeneration V Technology
lSO-8 Footprint
lLead-Free
VDSS = 30V
RDS(on) = 0.035Ω
Schottky Vf = 0.39V
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
A
A
Top View
SO-8
TM
PD- 95304
IRF7421D1PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 250µA
RDS(on) Static Drain-to-Source On-Resistance — 0.026 0.035 VGS = 10V, ID = 4.1A
— 0.040 0.060 VGS = 4.5V, ID = 2.1A
VGS(th) Gate Threshold Voltage 1.0 — — V VDS = VGS, ID = 250µA
gfs Forward Transconductance 4.6 — — S VDS = 15V, ID = 2.1A
IDSS Drain-to-Source Leakage Current — — 1.0 VDS = 24V, VGS = 0V
——25 V
DS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage — — -100 VGS = -20V
Gate-to-Source Reverse Leakage — — 100 VGS = 20V
QgTotal Gate Charge — 18 27 ID = 4.1A
Qgs Gate-to-Source Charge — 2.2 3.3 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge — 5.9 8.9 VGS = 10V (see figure 10) Â
td(on) Turn-On Delay Time — 6.7 — VDD = 15V
trRise Time — 27 — ID = 4.1A
td(off) Turn-Off Delay Time — 20 — RG = 6.2Ω
tfFall Time — 16 — RD = 3.7Ω Â
Ciss Input Capacitance — 510 — VGS = 0V
Coss Output Capacitance — 200 — pF VDS = 25V
Crss Reverse Transfer Capacitance — 84 — ƒ = 1.0MHz (see figure 9)
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ω
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current (Body Diode) — — 3.1 A
ISM Pulsed Source Current (Body Diode) — — 33
VSD Body Diode Forward Voltage — — 1.0 V TJ = 25°C, IS = 4.1A, VGS = 0V
trr Reverse Recovery Time (Body Diode) — 57 86 ns TJ = 25°C, IF = 4.1A
Qrr Reverse Recovery Charge — 93 140 nC di/dt = 100A/µs Â
MOSFET Source-Drain Ratings and Characteristics
2
Parameter Max. Units. Conditions
IF(av) Max. Average Forward Current 1.7 50% Duty Cycle. Rectangular Wave, TA = 25°C
1.2 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
A
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
IRM Max. Reverse Leakage current 0.06 VR = 30V TJ = 25°C
16 TJ = 125°C
CtMax. Junction Capacitance 110 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR
Schottky Diode Electrical Specifications
V
mA
IRF7421D1PbF
www.irf.com 3
2
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Power Mosfet Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
V , Drain-to-Source Voltage (V)
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
T = 150°C
DS
J
Fig 4. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 150°C
J
IRF7421D1PbF
4www.irf.com
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 4.1A
D
0.1
1
10
100
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
100µs
1ms
10ms
A
A
J
0.0
0.1
0.2
0 5 10 15 20 25 30 35
I , Drain Current (A)
,
0.01
0.02
0.03
0.04
0.05
0.06
0.07
3691215
A
/5
V , Gate-to-Source Voltage (V)
I = 5.8A
IRF7421D1PbF
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Power Mosfet Characteristics
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
V = 24V
V = 15V
DS
DS
I = 4.1A
D
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7421D1PbF
6www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
Fig.14 - Typical Junction Capacitance Vs.
Reverse Voltage
Reverse Current - IR (mA)
Fig. 12 -Typical Forward Voltage Drop Characteris-
tics
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30
R
)
J
10
100
1000
0102030
T = 25°C
J
Reverse Voltage - V (V)
R
T
Junction Capacitance - C (pF)
A
IRF7421D1PbF
www.irf.com 7
RECTIFIER
LOGO
INTERNATIONAL
EXAMPLE: THIS IS AN IRF7807D1 (FET KY)
XXXX
807D1
Y = LAS T DIGIT OF T HE YEAR
A = ASSEMBLY SITE CODE
WW = WEEK
LOT CODE
PRODUCT (OPTIONAL)
P = DIS GNATES LEAD - FREE
DAT E CODE (YWW)
PART NUMBER
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 B AS IC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONFORMS T O JEDEC OU T LINE MS -012AA.
NOT E S :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MIL LIME T ER
3. DIME NS I ONS AR E S H OWN IN MIL L IME T E R S [INCH E S ].
5 DIMENS ION DOE S NOT INCLUDE MOL D PROT RUS IONS .
6 DIMENS ION DOE S NOT INCLUDE MOL D PROT RUS IONS .
MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LE NGTH OF LEAD FOR S OLDERING TO
A SUBSTRAT E.
MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
SO-8 (Fetky) Package Outline
SO-8 (Fetky) Part Marking Information
IRF7421D1PbF
8www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
