Ordering number : ENN7010 MCH3406 N-Channel Silicon MOSFET MCH3406 Ultrahigh-Speed Switching Applications Features * * Low ON-state resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3406] 0.3 0.25 * Package Dimensions 0.15 0.25 2 1 0.65 0.07 1.6 2.1 3 2.0 3 0.85 1 : Gate 2 : Source 3 : Drain Specifications 1 SANYO : MCPH3 2 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS 10 V 3 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) V 12 A 1 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 20 VDS=10V, ID=1mA VDS=10V, ID=1.5A 0.4 Forward Transfer Admittance VGS(off) yfs ID=1.5A, VGS=4V ID=1A, VGS=2.5V 48 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 ID=0.5A, VGS=1.8V Gate-to-Source Leakage Current Cutoff Voltage 3.9 Marking : KF Unit max IDSS IGSS Zero-Gate Voltage Drain Current V(BR)DSS Conditions V 1 A 10 A 1.3 V 63 m 58 82 m 72 110 m 5.6 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71801 TS IM TA-3097 No.7010-1/4 MCH3406 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 280 Output Capacitance 60 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit 13 ns Rise Time tr td(off) See specified Test Circuit 35 ns See specified Test Circuit 35 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit 25 ns VDS=10V, VGS=4V, ID=3A 8.8 nC nC Gate-to-Source Charge Qgs Qgd VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A 0.85 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=3A, VGS=0 0.82 0.85 nC 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=1.5A RL=6.67 VIN D VOUT PW=10s D.C.1% G MCH3406 P.G 50 ID -- VDS V VDS=10V 3.5 2.0 1.5 1.0 25 0.5 0.5 0 C --25C 1.0 2.5 5C VGS=1.0V 1.5 3.0 Ta= 7 Drain Current, ID -- A 2.0 ID -- VGS 4.0 1.5 2.5 1.8V 10.0V 4.0V 2.5 V 3.0 Drain Current, ID -- A S 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 0 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 160 0.2 IT03490 1.6 IT03491 RDS(on) -- Ta 140 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 140 120 100 1.0A 1.5A 80 ID=0.5A 60 40 20 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT03492 120 100 V =1.8 VGS , A 5 0. V I D= =2.5 , VGS A 0 . 4.0V I D=1 S= .5A, V G I D=1 80 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT03493 No.7010-2/4 MCH3406 VDS=10V C 25 5 C -25 =- 3 2 C 75 Ta 1.0 7 5 3 1.0 7 5 3 2 0.1 7 5 3 2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.2 5 7 10 IT03494 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT03495 Ciss, Coss, Crss -- VDS 1000 VDD=10V VGS=4V 2 0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 3 f=1MHz 7 5 100 7 tr td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 5C 25 C --25 C 7 Drain Current, ID -- A tf 3 2 td(on) 10 7 5 Ciss 3 2 100 7 Coss 5 Crss 3 3 2 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 0 10 IT03496 3 2 VDS=10V ID=3A 3.5 10 7 5 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 3 2 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 10 IT03498 PD -- Ta 1.2 4 6 8 10 12 14 16 18 20 IT03497 ASO IDP=12A <10s 100s 1m s ID=3A 10 m DC 1.0 7 5 10 s op 0m s er ati on 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0.5 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V VGS=0 3 10 0.1 0.01 Allowable Power Dissipation, PD -- W IF -- VSD 10 7 5 Ta= 7 2 yfs -- ID Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT03499 M 1.0 ou nt 0.8 ed on ac er am ic 0.6 bo ar d( 90 0m m2 0.4 0. 8m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT03500 No.7010-3/4 MCH3406 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS No.7010-4/4