VS-GP100TS60SFPbF
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Revision: 09-Nov-2020 1Document Number: 95721
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“Half Bridge” IGBT INT-A-PAK, (Trench PT IGBT), 100 A
Proprietary Vishay IGBT Silicon “L Series”
FEATURES
• Trench PT IGBT technology
•FRED Pt
® anti-parallel diodes with fast recovery
• Very low conduction losses
•Al
2O3 DBC
• UL pending
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machines)
• Direct mounting to heatsink
• Very low junction to case thermal resistance
•Low EMI
PRIMARY CHARACTERISTICS
VCES 600 V
IC DC, TC = 130 °C 100 A
VCE(on) at 100 A, 25 °C 1.16 V
Speed DC to 1 kHz
Package INT-A-PAK
Circuit configuration Half bridge
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current IC
TC = 25 °C 337
A
TC = 80 °C 235
Pulsed collector current ICM 440
Peak switching current ILM 440
Gate to emitter voltage VGE ± 20 V
RMS isolation voltage VISOL Any terminal to case, t = 1 min 2500
Maximum power dissipation PD
TC = 25 °C 781 W
TC = 100 °C 312
Operating junction temperature range TJ-40 to +150 °C
Storage temperature range TStg -40 to +125
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 500 μA 600 - -
VCollector to emitter voltage VCE(on)
VGE = 15 V, IC = 100 A - 1.16 1.34
VGE = 15 V, IC = 200 A - 1.37 -
VGE = 15 V, IC = 100 A, TJ = 125 °C - 1.08 -
Gate threshold voltage VGE(th) VCE = VGE, IC = 3.2 mA 4.9 5.8 8.8
Temperature coefficient of threshold voltage ΔVGE(th)/ΔTJVCE = VGE, IC = 3.2 mA, (25 °C to 125 °C) - -27 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 50 A - 93 - S
Transfer characteristics VGE VCE = 20 V, IC = 100 A - 10.2 - V
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 600 V - 1.0 150 μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 300 -
Diode forward voltage drop VFM
IC = 100 A, VGE = 0 V - 1.36 1.96 V
IC = 100 A, VGE = 0 V, TJ = 125 °C - 1.17 -
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 500 nA
VS-GP100TS60SFPbF
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Revision: 09-Nov-2020 2Document Number: 95721
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge QgIC = 100 A,
VCC = 400 V
-942-
nCGate to emitter charge Qge -295-
Gate to collector charge Qgc -802-
Turn-on switching energy Eon
IC = 100 A,
VCC = 300 V,
VGE = 15 V, L = 500 μH
Rg = 3.3 Ω,
TJ = 25 °C
-1.0-
mJTurn-off switching energy Eoff -7.9-
Total switching energy Ets -8.9-
Turn-on delay time td(on) -242-
ns
Rise time tr-66-
Turn-off delay time td(off) -453-
Fall time tf-460-
Turn-on switching energy Eon
IC = 100 A,
VCC = 300 V,
VGE = 15 V, L = 500 μH
Rg = 3.3 Ω,
TJ = 125 °C
-2.0-
mJTurn-off switching energy Eoff - 15.3 -
Total switching energy Ets - 17.3 -
Turn-on delay time td(on) -257-
ns
Rise time tr-68-
Turn-off delay time td(off) -716-
Fall time tf-868-
Reverse bias safe operating area RBSOA
TJ = 150°C, IC = 440 A, VCC = 300 V,
Vp = 600 V, Rg = 3.3 Ω,
VGE = 15 V to 0 V, L = 500 μH
Fullsquare
Diode reverse recovery time trr IF = 50 A,
dIF/dt = 200 A/μs,
Vrr = 200 V
-115- ns
Diode peak reverse current Irr -11- A
Diode recovery charge Qrr -638- nC
Diode reverse recovery time trr IF = 50 A,
dIF/dt = 200 A/μs,
Vrr = 200 V, TJ = 125 °C
-210- ns
Diode peak reverse current Irr - 21.4 - A
Diode recovery charge Qrr -2251- nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction temperature range TJ-40 - 150 °C
Storage temperature range TStg -40 - 125
Junction to case per switch RthJC
- - 0.16
°C/Wper diode - - 0.48
Case to sink per module RthCS -0.1 -
Mounting torque
±10 %
to heatsink A mounting compound is
recommended and the torque should
be rechecked after a period of 3 hours
to allow the spread of the compound
4 to 6 Nm
busbar
Weight - 185 - g
VS-GP100TS60SFPbF
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Revision: 09-Nov-2020 3Document Number: 95721
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Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V
Fig. 3 - Typical IGBT Output Characteristics, VGE = 15 V
Fig. 4 - Typical IGBT Output Characteristics, TJ = 125 °C
Fig. 5 - Collector to Emitter Voltage vs. Junction Temperature
Fig. 6 - Typical IGBT Transfer Characteristics
0
20
40
60
80
100
120
140
160
0 50 100 150 200 250 300 350 400
Allowable Case Temperature (°C)
IC- Continuous Collector Current (A)
DC
0.1
1
10
100
1000
1 10 100 1000
I
C
(A)
V
CE
(V)
0
50
100
150
200
250
300
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1
IC(A)
VCE (V)
T
J
= 125 °C
TJ= 25 °C
TJ= 150 °C
0
20
40
60
80
100
120
140
160
180
200
0 0.20.40.60.81.01.21.41.61.8
I
C
(A)
V
CE
(V)
VGE= 12 V
VGE= 15 V
VGE= 18 V
V
GE= 9 V
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
20 40 60 80 100 120 140 160
V
CE
(V)
T
J
(°C)
100 A
200 A
50 A
0
20
40
60
80
100
3 4 5 6 7 8 9 10 11 12
IC(A)
VGE (V)
TJ= 25 °C
TJ= 125 °C
VCE = 20 V
VS-GP100TS60SFPbF
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Revision: 09-Nov-2020 4Document Number: 95721
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Fig. 7 - Typical Total Gate Charge vs. Gate to Emitter Voltage
Fig. 8 - Typical IGBT Gate Threshold Voltage
Fig. 9 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 10 - Maximum Diode Continuous Forward Current
vs. Case Temperature
Fig. 11 - Typical Diode Forward Characteristics
Fig. 12 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 3.3 Ω, VGE = 15 V, L = 500 μH
0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0 200 400 600 800 1000 1200
V
GE
(V)
Q
g
(nC)
VCC = 400 V
IC = 100 A
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GEth
(V)
I
C
(mA)
TJ= 25 °C
TJ= 125 °C
0.00001
0.0001
0.001
0.01
0.1
1
10
100 200 300 400 500 600
ICES (mA)
VCES (V)
TJ= 25 °C
TJ= 125 °C
TJ= 150 °C
0
20
40
60
80
100
120
140
160
0 20406080100120140160
Allowable Case Temperature (°C)
IF- Continuous Forward Current (A)
DC
0
20
40
60
80
100
120
140
160
180
200
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IF(A)
VFM (V)
TJ= 25 °C
TJ= 125 °C
TJ= 150 °C
0
5
10
15
20
25
0 20406080100120140160
Energy (mJ)
IC(A)
Eoff
Eon
VS-GP100TS60SFPbF
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Fig. 13 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 3.3 Ω, VGE = 15 V, L = 500 μH
Fig. 14 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH
Fig. 15 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH
Fig. 16 - Typical Diode Reverse Recovery Time vs. dIF/dt
Vrr = 200 V, IF = 50 A
Fig. 17 - Typical Diode Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 50 A
Fig. 18 - Typical Diode Reverse Recovery Charge vs. dIF/dt)
Vrr = 200 V, IF = 50 A
10
100
1000
10000
0 20406080100120140160
Switching Time (ns)
IC(A)
tr
td(off)
td(on)
tf
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30
Energy (mJ)
Rg(
Ω
)
Eoff
Eon
10
100
1000
10 000
0 5 10 15 20 25 30
Switching Time (ns)
Rg(Ω)
td(off)
tf
td(on)
tr
60
80
100
120
140
160
180
200
220
240
260
280
100200300400500
trr (ns)
dIF/dt (A/μs)
TJ= 25 °C
TJ= 125 °C
300
600
900
1200
1500
1800
2100
2400
2700
3000
3300
100 200 300 400 500
Qrr (nC)
dIF/dt (A/μs)
TJ= 25 °C
TJ= 125 °C
VS-GP100TS60SFPbF
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Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT)
Fig. 20 - Maximum Thermal Impedance ZthJC Characteristics - (Diode))
ORDERING INFORMATION TABLE
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
- IGBT die technology (GP = trench PT)
1- Vishay Semiconductors product
2
- Current rating (100 = 100 A)
3
- Circuit configuration (T = half bridge)
4
- Package indicator (S = INT-A-PAK)
5
- Voltage code (60 = 600 V)
6
- Speed/type (S = standard speed IGBT)7
- Diode type
8
9- None = standard production; PbF = Lead (Pb)-free
Device code
51 32 4 6 7 8 9
GPVS- 100 T S 60 S F PbF
VS-GP100TS60SFPbF
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Revision: 09-Nov-2020 7Document Number: 95721
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CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95173
1
2
3
5
4
7
6
Outline Dimensions
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Revision: 27-Mar-13 1Document Number: 95173
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INT-A-PAK IGBT
DIMENSIONS in millimeters (inches)
17 (0.67) 23 (0.91) 5 (0.20)
23 (0.91)
14.3
(0.56)
3 screws M6 x 10
66 (2.60)
94 (3.70)
35 (1.38)
14.5
(0.57)
123
2.8 x 0.8
(0.11 x 0.03)
5
4
7
6
37 (1.44)
80 (3.15)
Ø 6.5
(Ø 0.25)
30
(1.18)
9 (0.33)
7 (0.28)
28 (1.10)
29 (1.15)
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
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