© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 150 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW150 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C80A
IDM TC= 25°C, pulse width limited by TJM 320 A
IAR TC= 25°C80A
EAR TC= 25°C45mJ
EAS TC= 25°C 1.5 J
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ£ 150°C, RG = 2 W
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 3 00 °C
MdMounting torque TO-247 1.13/10 Nm/lb.in.
TO-264 0.9/6 Nm/lb.in.
Weight TO-247 6 g
TO-264 10 g
TO-268 4 g
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Features
lLow gate charge
lInternational standard packages
l Epoxy meet UL 94 V-0, flammability
classification
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lAvalanche energy and current rated
lFast intrinsic Rectifier
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 uA 150 V
VGS(th) VDS = VGS, ID = 4 mA 2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25mA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 22.5 mW
Pulse test, t £ 300 ms, duty cycle d £ 2 %
G = Gate
S = Source TAB = Drain
98725 (05/31/00)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
GDD (TAB)
IXFH 80N15Q
IXFK 80N15Q
IXFT 80N15Q
VDSS = 150 V
ID25 = 80 A
RDS(on) = 22.5 mW
trr £200 ns
Preliminary data sheet
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 35 50 S
Ciss 4500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 M Hz 1400 p F
Crss 680 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 ns
td(off) RG = 2.0 W (External), 68 ns
tf20 ns
Qg(on) 180 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 39 nC
Qgd 85 nC
RthJC 0.35 K/W
RthCK TO-247 0.25 K/W
TO-264 0.15 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
TO-268 Outline
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 80 A
ISM Repetitive; pulse width limited by TJM 320 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr 200 ns
QRM 1.2 mC
IRM 10 A
IF = IS -di/dt = 100 A/ms, VR = 100 V
IXFH 80N15Q IXFK 80N15Q
IXFT 80N15Q
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
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